Abstract: A plasma processing apparatus includes: a process chamber with a side wall capable of being evacuated; magnetic field generating means disposed externally of the side wall of the process chamber, for generating a radio frequency magnetic field in the process chamber and generating plasma through inductive coupling; a base disposed in the process chamber for placing thereon a substrate to be processed; and a cooling unit for cooling the side wall of the process chamber near at a space where the plasma is generated. It is possible to generate high density plasma under a low pressure and to prevent the inner surface of a vacuum belljar from being etched by plasma.

Abstract: A method of down-flow type plasma processing, such as etching or ashing, on a wafer, in which a plasma of a reactant gas is formed by subjecting a reactant gas to a high frequency electromagnetic wave and only active species generated by the plasma is supplied onto the wafer while the plasma is shielded from the wafer, the method comprising the steps of mounting a wafer on a flat surface of a wafer stage; disposing an exhaust ring having a diameter greater than that of the wafer concentrically with the wafer; and exhausting through the entire exhaust gap formed between the flat surface of the wafer stage and one end of the exhaust ring. An apparatus for carrying out the method is also disclosed.