Patents by Inventor Yasushi Jin

Yasushi Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor photodetector device
    Patent number: 7211829
    Abstract: A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
    Type: Grant
    Filed: February 17, 2005
    Date of Patent: May 1, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd
    Inventors: Hisatada Yasukawa, Ryouichi Ito, Takaki Iwai, Masaki Taniguchi, Yasushi Jin
  • Semiconductor photodetector device
    Publication number: 20050189546
    Abstract: A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
    Type: Application
    Filed: February 17, 2005
    Publication date: September 1, 2005
    Inventors: Hisatada Yasukawa, Ryouichi Ito, Takaki Iwai, Masaki Taniguchi, Yasushi Jin