Patents by Inventor Yasushi Kamiya
Yasushi Kamiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240089384Abstract: An image processing apparatus includes a placement unit that is provided on an upper surface of a housing and on which a document is placed; an imaging unit that images the placement unit from above; and a processor configured to display guidance information indicating that the document to be imaged by the imaging unit is to be placed on the placement unit, on a display unit.Type: ApplicationFiled: March 23, 2023Publication date: March 14, 2024Applicant: FUJIFILM Business Innovation Corp.Inventors: Yasushi ICHINOWATARI, Kaho Kamiya, Mitsuharu Ito, Shigeki Katayama, Koichiro Takagishi
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Patent number: 10062545Abstract: A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder using an ion beam etching apparatus. The computer program includes a decremental control program having a command according to which the first step is executed; and an incremental control program having a command according to which the second step is executed.Type: GrantFiled: March 7, 2016Date of Patent: August 28, 2018Assignee: CANON ANELVA CORPORATIONInventors: Yasushi Kamiya, Einstein Noel Abarra, Yuta Konno
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Patent number: 9966092Abstract: To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.Type: GrantFiled: December 1, 2016Date of Patent: May 8, 2018Assignee: CANON ANELVA CORPORATIONInventors: Yasushi Kamiya, Hiroshi Akasaka, Kiyotaka Sakamoto
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Patent number: 9852879Abstract: An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.Type: GrantFiled: June 26, 2015Date of Patent: December 26, 2017Assignee: CANON ANELVA CORPORATIONInventors: Yasushi Kamiya, Hiroshi Akasaka, Yuta Konno
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Publication number: 20170098458Abstract: To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.Type: ApplicationFiled: December 1, 2016Publication date: April 6, 2017Inventors: Yasushi Kamiya, Hiroshi Akasaka, Kiyotaka Sakamoto
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Patent number: 9564360Abstract: An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.Type: GrantFiled: May 25, 2016Date of Patent: February 7, 2017Assignee: CANON ANELVA CORPORATIONInventors: Hiroshi Akasaka, Masayoshi Ikeda, Kazuhiro Kimura, Yasushi Kamiya, Tomohiko Toyosato
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Publication number: 20160268162Abstract: An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.Type: ApplicationFiled: May 25, 2016Publication date: September 15, 2016Inventors: Hiroshi Akasaka, Masayoshi Ikeda, Kazuhiro Kimura, Yasushi Kamiya, Tomohiko Toyosato
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Patent number: 9422623Abstract: The invention provides: an ion beam generator and an ion beam plasma processing apparatus including a movable member (for example, a plug) which is capable of reducing formation of an adhering film on a sidewall of the member even when an electrode included in a grid assembly is sputtered. The ion beam generator of an aspect of the invention includes: a grid assembly provided opposed to an upper wall; a plug movable in a first direction from the upper wall toward the grid assembly and in a second direction from the grid assembly toward the upper wall; and a shield configured to shield a sidewall of the plug.Type: GrantFiled: January 15, 2014Date of Patent: August 23, 2016Assignee: CANON ANELVA CORPORATIONInventors: Einstein Noel Abarra, Yasushi Kamiya, Yuta Konno
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Publication number: 20160189925Abstract: A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder using an ion beam etching apparatus. The computer program includes a decremental control program having a command according to which the first step is executed; and an incremental control program having a command according to which the second step is executed.Type: ApplicationFiled: March 7, 2016Publication date: June 30, 2016Applicant: CANON ANELVA CORPORATIONInventors: Yasushi KAMIYA, Einstein Noel ABARRA, Yuta KONNO
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Patent number: 9312102Abstract: A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.Type: GrantFiled: December 9, 2011Date of Patent: April 12, 2016Assignee: CANON ANELVA CORPORATIONInventors: Yasushi Kamiya, Einstein Noel Abarra, Yuta Konno
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Patent number: 9190287Abstract: In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.Type: GrantFiled: January 21, 2014Date of Patent: November 17, 2015Assignee: Canon Anelva CorporationInventors: Takashi Nakagawa, Masayoshi Ikeda, Yukito Nakagawa, Yasushi Kamiya, Yoshimitsu Kodaira
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Publication number: 20150303028Abstract: An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.Type: ApplicationFiled: June 26, 2015Publication date: October 22, 2015Inventors: Yasushi Kamiya, Hiroshi Akasaka, Yuta Konno
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Publication number: 20140206197Abstract: In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.Type: ApplicationFiled: January 21, 2014Publication date: July 24, 2014Applicant: CANON ANELVA CORPORATIONInventors: Takashi NAKAGAWA, Masayoshi IKEDA, Yukito NAKAGAWA, Yasushi KAMIYA, Yoshimitsu KODAIRA
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Publication number: 20140124363Abstract: The invention provides: an ion beam generator and an ion beam plasma processing apparatus including a movable member (for example, a plug) which is capable of reducing formation of an adhering film on a sidewall of the member even when an electrode included in a grid assembly is sputtered. The ion beam generator of an aspect of the invention includes: a grid assembly provided opposed to an upper wall; a plug movable in a first direction from the upper wall toward the grid assembly and in a second direction from the grid assembly toward the upper wall; and a shield configured to shield a sidewall of the plug.Type: ApplicationFiled: January 15, 2014Publication date: May 8, 2014Applicant: CANON ANELVA CORPORATIONInventors: Einstein Noel ABARRA, Yasushi KAMIYA, Yuta KONNO
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Patent number: 8378576Abstract: [Objection of the invention]An ion beam generator, a thermal distortion in a grid assembly is reduced. [Structure to solve the objection]Thermal expansion coefficients ?P, ?M and ?G, for a sidewall (1A) of a discharge chamber, mounting platform (40) and extraction grid electrode assembly (20) are selected to have a relation: ?P>?M??G. For example, the material of discharge chamber sidewall is stainless steel o aluminum, the material of grids is Mo, W or C and the material of platform is Ti or Mo.Type: GrantFiled: October 4, 2010Date of Patent: February 19, 2013Assignee: Canon Anelva CorporationInventors: Einstein Noel Abarra, Yasushi Miura, Eiji Fujiyama, Naoyuki Suzuki, Yasuyuki Taneda, Yasushi Kamiya
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Publication number: 20120145535Abstract: A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.Type: ApplicationFiled: December 9, 2011Publication date: June 14, 2012Applicant: CANON ANELVA CORPORATIONInventors: Yasushi KAMIYA, Einstein Noel Abarra, Yuta Konno
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Publication number: 20110139998Abstract: [Objective of the Invention] An ion beam generator, a thermal distortion in a grid assembly is reduced. [Structure to Solve the Objective] Thermal expansion coefficients ?P, ?M and ?G, for a sidewall (1A) of a discharge chamber, mounting platform (40) and extraction grid electrode assembly (20) are selected to have a relation: ?P>?M??G. For example, the material of discharge chamber sidewall is stainless steel o aluminum, the material of grids is Mo, W or C and the material of platform is Ti or Mo.Type: ApplicationFiled: October 4, 2010Publication date: June 16, 2011Applicant: CANON ANELVA CORPORATIONInventors: Einstein Noel ABARRA, Yasushi MIURA, Eiji FUJIYAMA, Naoyuki SUZUKI, Yasuyuki TANEDA, Yasushi KAMIYA
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Patent number: 7704556Abstract: The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.Type: GrantFiled: June 18, 2007Date of Patent: April 27, 2010Assignee: Canon Anelva CorporationInventors: Hitoshi Morisaki, Yasushi Kamiya, Shuji Nomura, Masahiro Totuka, Tomoki Oku, Ryo Hattori
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Publication number: 20080020140Abstract: A silicon nitride film forming method makes possible the high reproducibility of film quality or film thickness. The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.Type: ApplicationFiled: June 18, 2007Publication date: January 24, 2008Inventors: Hitoshi Morisaki, Yasushi Kamiya, Shuji Nomura, Masahiro Totuka, Tomoki Oku, Ryo Hattori
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Publication number: 20030198743Abstract: The present invention is to provide a silicon nitride film forming apparatus and a forming method which makes possible the high reproducibility of film quality or film thickness. The silicon nitride film forming apparatus and forming method in which a heating element and a substrate are arranged in a vacuum vessel connected to a gas exhaust system and a gas supply system to deposit a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system, comprises: an inner wall which is arranged in the vacuum vessel surrounding the heating element and the substrate so as to form a film formation space, a gas introduction means to introduce the raw material gas to the film forming space, and at least one of a heating means and a cooling means of the inner wall arranged to control the inner wall to a predetermined temperature.Type: ApplicationFiled: April 22, 2003Publication date: October 23, 2003Inventors: Hitoshi Morisaki, Yasushi Kamiya, Shuji Nomura, Masahiro Totuka, Tomoki Oku, Ryo Hattori