Abstract: A substrate processing apparatus includes a film forming chamber in which a film is formed on a substrate, and a movable member configured to support a mask or both the mask and the substrate in an internal space of the film forming chamber and be movable. Before the film is formed on the substrate, in a state in which the substrate conveyed to the internal space of the film forming chamber by a substrate conveying mechanism is separated from the mask supported by the movable member, the movable member moves so as to reduce an alignment error between the substrate and the mask and then supports the substrate. The movable member moves to a predetermined position after the substrate is supported by the movable member and before the substrate is taken out from the film forming chamber by the substrate conveying mechanism.

Abstract: A deposition apparatus comprising a substrate holder for holding a substrate, a conveying mechanism for conveying the substrate in a horizontal attitude to insert/remove the substrate into/from the substrate holder, a rotating mechanism for changing an attitude of the substrate, a chamber for accommodating the rotated substrate holder to set the substrate in a vertical attitude and to perform a deposition process, and a control unit configured to perform first control to cause the conveying mechanism to make the substrate holder hold the substrate at a first position when inserting the substrate into the substrate holder before the deposition process, and to perform second control to cause the conveying mechanism to receive the substrate from the substrate holder at a second position located more backward than the first position when removing the substrate from the substrate holder after the deposition process.

Abstract: A substrate processing apparatus includes a film forming chamber in which a film is formed on a substrate, and a movable member configured to support a mask or both the mask and the substrate in an internal space of the film forming chamber and be movable. Before the film is formed on the substrate, in a state in which the substrate conveyed to the internal space of the film forming chamber by a substrate conveying mechanism is separated from the mask supported by the movable member, the movable member moves so as to reduce an alignment error between the substrate and the mask and then supports the substrate. The movable member moves to a predetermined position after the substrate is supported by the movable member and before the substrate is taken out from the film forming chamber by the substrate conveying mechanism.

Abstract: A method for forming a thin film on a substrate using a gas includes providing a substrate in a reaction chamber. A head for emitting a gas in the reaction chamber is disposed opposite the substrate. This step includes mounting a detachable gas liberating surface to the head so that the distance between the head and the substrate surface is 10 mm or less. Gas is then emitted from the head into the reaction chamber.

Abstract: A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

Abstract: A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

Abstract: An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

Abstract: The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.

Abstract: A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

Abstract: A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

Abstract: A chemical vapor deposition apparatus comprises a starting material container holding a starting material in a liquid state, a starting gas generating container into which the liquid starting material is fed from the starting material container, a means for keeping constant the liquid level of the liquid starting material held in the starting gas generating container, a means for injecting a bubbling gas from the outside into the liquid starting material held in the starting gas generating container, thereby bubbling the starting gas, and a reaction chamber into which a mixed gas of the starting gas and the bubbling gas are fed.

Abstract: A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

Abstract: An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

Abstract: A method of manufacturing a semiconductor device having a bonding pad portion. A wiring is formed on a substrate and an insulative protective film is formed onto the wiring. An opening portion is exposed and serves as the bonding pad portion in which a surface of a part of the wiring is exposed. A metal film is selectively grown only in this opening position.

Abstract: A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.