Abstract: A method for manufacturing a semiconductor device includes forming a support on a side surface of a stack that extends from a substrate. The stack includes a second sacrificial film, plural first sacrificial films and plural silicon (Si)-containing films, wherein one first sacrificial film of the plural sacrificial films is stacked upon the second sacrificial film and the plural sacrificial films and the plural Si-containing films are alternately stacked upon one another, and at least a side of the second sacrificial film is not covered by the support, the one first sacrificial film and the substrate. The method further includes removing the second sacrificial film from the stack to form a space between the substrate and the one first sacrificial film and adjacent to the support, and filling the space with a dielectric film.

Abstract: The PVD apparatus includes a chamber, a plurality of stages, a first target holder, a power supply mechanism, and a shield. The plurality of stages are provided inside the chamber, and each of the plurality of stages is configured to place at least one substrate on an upper surface thereof. The first target holder is configured to hold at least one target provided for one stage, the target being exposed to a space inside the chamber. The power supply mechanism supplies power to the target via the first target holder. The shield is provided inside the chamber and a part of the shield is disposed between a first stage and a second stage in the plurality of stages, and between a first processing space on the first stage and a second processing space on the second stage.

Abstract: A method for manufacturing a semiconductor device includes forming a support on a side surface of a stack that extends from a substrate. The stack includes a second sacrificial film, plural first sacrificial films and plural silicon (Si)-containing films, wherein one first sacrificial film of the plural sacrificial films is stacked upon the second sacrificial film and the plural sacrificial films and the plural Si-containing films are alternately stacked upon one another, and at least a side of the second sacrificial film is not covered by the support, the one first sacrificial film and the substrate. The method further includes removing the second sacrificial film from the stack to form a space between the substrate and the one first sacrificial film and adjacent to the support, and filling the space with a dielectric film.

Abstract: A semiconductor processing system includes an intermediate structure disposed between an atmospheric pressure entrance transfer chamber and a vacuum common transfer chamber. The intermediate structure includes a transfer passage for a target substrate to pass therein. The transfer passage includes a first buffer chamber a middle transfer chamber and a second buffer chamber detachably connected. An additional processing apparatus is detachably connected to the middle transfer chamber. The intermediate structure is selectively arranged in first or second state. In the first state, the additional processing apparatus performs a vacuum process, while the first buffer chamber is a load-lock chamber. In the second state, the additional processing apparatus performs an atmospheric pressure process, while the second buffer chamber is a load-lock chamber.

Abstract: Processing apparatus is disclosed, that comprises substrate container holding table that can hold substrate container that contains plurality of target substrates, first transferring chamber, disposed adjacent to the substrate container holding table, that maintains the interior at first pressure, first processing unit group, disposed around the first transferring chamber, that processes target substrate at the first pressure, first transferring mechanism, disposed in the first transferring chamber, that transfers target substrate, second transferring chamber, disposed adjacent to the first transferring chamber, that maintains the interior at second pressure, second processing unit group, disposed around the second transferring chamber, that processes target substrate at the second pressure, and second transferring mechanism, disposed in the second transferring chamber, wherein the first transferring mechanism and/or the second transferring mechanism has at least two transferring arms.

Abstract: Processing apparatus is disclosed, that comprises substrate container holding table that can hold substrate container that contains plurality of target substrates, first transferring chamber, disposed adjacent to the substrate container holding table, that maintains the interior at first pressure, first processing unit group, disposed around the first transferring chamber, that processes target substrate at the first pressure, first transferring mechanism, disposed in the first transferring chamber, that transfers target substrate, second transferring chamber, disposed adjacent to the first transferring chamber, that maintains the interior at second pressure, second processing unit group, disposed around the second transferring chamber, that processes target substrate at the second pressure, and second transferring mechanism, disposed in the second transferring chamber, wherein the first transferring mechanism and/or the second transferring mechanism has at least two transferring arms.

Abstract: A semiconductor processing system includes an intermediate structure (37A, 37B) disposed between an atmospheric pressure entrance transfer chamber (32) and a vacuum common transfer chamber (36). The intermediate structure includes a transfer passage (38A, 38B) for a target substrate (W) to pass therein. The transfer passage includes a first buffer chamber (70), a middle transfer chamber (72), and a second buffer chamber (74) detachably connected. An additional processing apparatus (110, 110A) is detachably connected to the middle transfer chamber. The intermediate structure is selectively arranged in first or second state. In the first state, the additional processing apparatus (110) performs a vacuum process, while the first buffer chamber (70) is a load-lock chamber. In the second state, the additional processing apparatus (110A) performs an atmospheric pressure process, while the second buffer chamber (74) is a load-lock chamber.

Abstract: Processing apparatus is disclosed, that comprises substrate container holding table that can hold substrate container that contains plurality of target substrates, first transferring chamber, disposed adjacent to the substrate container holding table, that maintains the interior at first pressure, first processing unit group, disposed around the first transferring chamber, that processes target substrate at the first pressure, first transferring mechanism, disposed in the first transferring chamber, that transfers target substrate, second transferring chamber, disposed adjacent to the first transferring chamber, that maintains the interior at second pressure, second processing unit group, disposed around the second transferring chamber, that processes target substrate at the second pressure, and second transferring mechanism, disposed in the second transferring chamber, wherein the first transferring mechanism and/or the second transferring mechanism has at least two transferring arms.

Abstract: A processing system includes a transfer part (4) having a container disposed therein for performing taking out therefrom of a not-yet-processed object and loading therein the already-processed object; processing parts (11 through 18) for performing predetermined processing on the object; and a plurality of conveying units (21, 22) conveying the object between a first position for delivery of the object with the container disposed in the transfer part and a second position for delivery of the object with the processing part, wherein: each of the plurality of conveying units can move between the first position and second position; a moving path of the conveying units includes a plurality of paths each along an arrangement of the processing parts; and each of the conveying units can solely perform delivery of the object with the processing part on both sides or the transfer part.