Abstract: According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part and the second electrode. A thickness of a turned-back portion at an end of the wire on a side opposite to the second electrode is smaller than a diameter of the wire.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part and the second electrode. A thickness of a turned-back portion at an end of the wire on a side opposite to the second electrode is smaller than a diameter of the wire.

Abstract: A semiconductor memory device includes: a first dielectric formed on top of a semiconductor substrate; a contact plug embedded in the first dielectric; a second dielectric formed on top of the first interlayer dielectric; an interconnection layer embedded in a groove formed in the second dielectric on top of the contact plug; and an insulating film formed in the second dielectric adjacent to a side surface of the interconnection layer. The contact plug has a notch in a part of a top surface of the contact plug. The insulating film is formed to extend from a top surface of the second dielectric to the notch included in the contact plug.

Abstract: A semiconductor memory device includes: a first dielectric formed on top of a semiconductor substrate; a contact plug embedded in the first dielectric; a second dielectric formed on top of the first interlayer dielectric; an interconnection layer embedded in a groove formed in the second dielectric on top of the contact plug; and an insulating film formed in the second dielectric adjacent to a side surface of the interconnection layer. The contact plug has a notch in a part of a top surface of the contact plug. The insulating film is formed to extend from a top surface of the second dielectric to the notch included in the contact plug.

Abstract: A honeycomb core material which is excellent in flame retardation, thermal insulation and noise insulation and has improved transportability and handling efficiency and which can be suitably used also for a sandwich structure of a curved shape as a foam has flexibility and elasticity, and a method for its production. A composite foam comprising a phosphoric acid type inorganic foam and a urethane type organic foam, obtained by foaming and curing an aqueous mixture containing a phosphorus-containing acid material, a curing agent, a blowing agent and a urethane polymer having NCO groups, is filled in cells of a honeycomb body having a cell size of from 3 to 100 mm and a porosity of from 92 to 99.5% according to JIS-A6931.

Abstract: A polyurethane foam which is obtained by reacting an addition-polymerizable active hydrogen component comprising a compound having a group containing active hydrogen and an addition-polymerizable functional group or comprising both this compound and a compound containing at least 2.5 groups (on the average) containing active hydrogen and not containing addition-polymerizable functional groups with an organic polyisocyanate in the presence or absence of at least one auxiliary selected from the group consisting of foaming agents and additives to polymerize the addition-polymerizable functional group and simultaneously form a polyurethane, and which has a structure in which the chains formed by the addition polymerization have been cross-linked to the polyurethane chains. The polyurethane foam is useful as a rigid polyurethane foam excellent in hardness, dimensional stability, etc. and usable as a heat insulator, shock-absorbing material, synthetic wood, etc.

Abstract: A polyurethane foam which is obtained by reacting an addition-polymerizable active hydrogen component comprising a compound having a group containing active hydrogen and an addition-polymerizable functional group or comprising both this compound and a compound containing at least 2.5 groups (on the average) containing active hydrogen and not containing addition-polymerizable functional groups with an organic polyisocyanate in the presence or absence of at least one auxiliary selected from the group consisting of foaming agents and additives to polymerize the addition-polymerizable functional group and simultaneously form a polyurethane, and which has a structure in which the chains formed by the addition polymerization have been cross-linked to the polyurethane chains. The polyurethane foam is useful as a rigid polyurethane foam excellent in hardness, dimensional stability, etc. and usable as a heat insulator, shock-absorbing material, synthetic wood, etc.

Abstract: Foamed polyurethanes substantially free from non-uniform density distribution are obtained by dispersing an inert gas with mechanical stirring into a foamed polyurethane-forming composition containing substantially no blowing agent and comprising (1) an organic polyisocyanate component, (2) a polyol component comprising a high molecular weight polyol (A1) and a low molecular weight polyol (A2), (3) a dehydrating agent (B) and optionally organic microballoons, and curing the resulting composition containing therein the inert gas substantially homogeneously distributed. Foamed polyurethanes thus obtained are lightweight and of reduced warpage after processing and are suitable for model materials.