Patents by Inventor Yasushi Kurata
Yasushi Kurata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20060186373Abstract: This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a polishing method making use of this polishing medium. Also, it is preferable that the water-soluble polymer has a weight-average molecular weight of 500 or more and the polishing medium has a coefficient of kinetic friction of 0.25 or more, a Ubbelode's viscosity of from 0.95 mPa.s (0.95 cP) to 1.5 mPa.s (1.5 cP) and a point-of-inflection pressure of 5 kPa (50 gf/cm2).Type: ApplicationFiled: April 21, 2006Publication date: August 24, 2006Inventors: Takeshi Uchida, Yasuo Kamigata, Hiroki Terasaki, Yasushi Kurata, Tetsuya Hoshino, Akiko Igarashi
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Publication number: 20060186372Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: April 20, 2006Publication date: August 24, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20060180787Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: February 16, 2006Publication date: August 17, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Publication number: 20060148667Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.Type: ApplicationFiled: January 30, 2004Publication date: July 6, 2006Applicant: Hitachi Chemical Co., Ltd.Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
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Publication number: 20060124591Abstract: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.Type: ApplicationFiled: August 6, 2003Publication date: June 15, 2006Inventors: Kouji Haga, Yuto Ootsuki, Yasushi Kurata, Kazuhiro Enomoto
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Publication number: 20060124597Abstract: This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and. water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.Type: ApplicationFiled: February 13, 2006Publication date: June 15, 2006Inventors: Yasushi Kurata, Yasuo Kamigata, Takeshi Uchida, Hiroki Terasaki, Akiko Igarashi
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Publication number: 20060118524Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: February 16, 2006Publication date: June 8, 2006Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Publication number: 20060037251Abstract: This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.Type: ApplicationFiled: August 11, 2005Publication date: February 23, 2006Inventors: Yasushi Kurata, Yasuo Kamigata, Takeshi Uchida, Hiroki Terasaki, Akiko Igarashi
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Publication number: 20050269295Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: July 11, 2005Publication date: December 8, 2005Applicant: Hitachi Chemical Company Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20050181609Abstract: A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more types selected from one or more acids (A-group) selected from acids of which the dissociation constant (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more types selected from one or more acids (B-group) selected from acids of which the dissociation constant (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group.Type: ApplicationFiled: April 28, 2003Publication date: August 18, 2005Inventors: Yasushi Kurata, Katsuyuki Masuda, Hiroshi Ono, Yasuo Kamigata, Kazuhiro Enomoto
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Publication number: 20050173669Abstract: A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the dissociation constant (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration.Type: ApplicationFiled: May 29, 2003Publication date: August 11, 2005Applicant: Hitachi Chemical Co. Ltd.Inventors: Yasushi Kurata, Yasuo Kamigata, Sou Anzai, Hiroki Terazaki
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Publication number: 20050118820Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: November 18, 2004Publication date: June 2, 2005Applicant: Hitachi Chemical Company Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20050085168Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: October 12, 2004Publication date: April 21, 2005Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Patent number: 6863700Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: GrantFiled: February 13, 2001Date of Patent: March 8, 2005Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
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Patent number: 6783434Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: GrantFiled: June 19, 2001Date of Patent: August 31, 2004Assignee: Hitachi Chemical Company, Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20040147206Abstract: A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.Type: ApplicationFiled: January 20, 2004Publication date: July 29, 2004Applicant: Hitachi Chemical Company Ltd.Inventors: Toshihiko Akahori, Toranosuke Ashizawa, Keizo Hirai, Miho Kurihara, Masato Yoshida, Yasushi Kurata
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Publication number: 20030219982Abstract: A polishing liquid for metal containing a metal-oxidizing agent, an oxidized metal dissolving agent, a protective film forming agent, a water-soluble polymer and water, the polishing liquid being used for producing a wiring pattern having a metal-embedded wiring portion of 10 to 100 &mgr;m width and an insulating portion of 10 to 100 &mgr;m width in which pattern the wiring portion is arranged at a wiring density of 40 to 60%, the polishing liquid for metal being comprising in that, when a surface to be polished of a metal film embedded in the wiring portion and a surface to be polished of an insulating film formed at both side portions of the metal film is polished substantially flush, wherein (width of the metal-embedded wiring portion)/(magnitude of dishing (depth)) is no less than 103.Type: ApplicationFiled: May 23, 2002Publication date: November 27, 2003Applicant: HITACHI CHEMICAL CO., LTDInventors: Yasushi Kurata, Yasuo Kamigata, Takeshi Uchida, Hiroki Terazaki, Akiko Igarashi
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Patent number: 6420269Abstract: The invention relates to an abrasive containing a slurry of the cerium oxide grains dispersed in water. The Cerium oxide grains are obtained by adding hydrogen peroxide to an aqueous dispersion of cerium carbonate. The Cerium oxide grains are obtained by oxidizing a precipitate, which is formed through addition of ammonium hydrogencarbonate to an aqueous solution of cerium nitrate, with hydrogen peroxide. The Cerium oxide grains are obtained by neutralizing or alkallfying an aqueous solution of cerium ammonium nitrate.Type: GrantFiled: December 30, 1997Date of Patent: July 16, 2002Assignee: Hitachi Chemical Company, Ltd.Inventors: Jun Matsuzawa, Yasushi Kurata, Kiyohito Tanno, Yoshio Honma
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Publication number: 20020090895Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.Type: ApplicationFiled: January 11, 2002Publication date: July 11, 2002Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yuuto Ootuki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno
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Publication number: 20020069593Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.Type: ApplicationFiled: February 13, 2001Publication date: June 13, 2002Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki