Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: A mold assembly for forming an ophthalmic lens article includes a first mold and a second mold. The first and second molds are assembled together to define a mold cavity therebetween having a profile corresponding to that of the ophthalmic lens article to be formed. The mold cavity is filled with a polymeric material which is polymerized to form the ophthalmic lens article. At least one of the first and second molds is a resin mold which is formed from a resin material, and a portion of at least a molding surface of the resin mold is directly irradiated with UV radiation so as to provide a UV-treated surface. The ophthalmic lens article formed in the mold cavity is held on the resin mold such that the ophthalmic lens article adheres to the UV-treated surface upon separating the first and second molds away from one another.

Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth.

Abstract: A fuel supplying device for an engine comprises an electronic governor (1) and a mechanical governor (2). In this device, the mechanical governor (2) limits a maximum fuel injection amount of an electronic control by the electronic governor (1).

Abstract: A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000.degree. C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp<Tr.ltoreq.

Abstract: A stainless steel having excellent corrosion resistance to ozone added water, such as ozone added ultrapure water used in semiconductor manufacturing processes and the like, as well as a manufacturing method. The stainless steel comprises a base metal and an oxide film formed on the surface of the base metal, the base metal being a stainless steel which contains 12 to 30% of Cr, 0 to 35% of Ni, and 1 to 6% of Al and Si while the contents of the other alloying elements are limited to as low a level as possible, the oxide film mainly comprising Al oxide or a Si oxide or both. The oxide film may be formed on the base metal surface through the dry oxidation process or the wet oxidation process. In the stainless steel, metallic ions are rarely dissolved from the base metal into the ozone added water.

Abstract: To adapt temperature control of a secondary cooling water to the temperature of a primary cooling water: A control apparatus computes duty factor D from measured open time period T.sub.ON and closed time period T.sub.OFF of a solenoid valve (step B3) for each cycle of the solenoid valve operation (step B2). The apparatus classifies the computed duty factor into one of a plurality of predetermined ranges and conditionally updates the reference temperature Pt of the secondary cooling water based on the classification (B5, B6, B7). If the reference temperature has reached an upper limit P.sub.MAX and if the duty factor has exceeded an upper limit, e.g., 95 percent (B8), the apparatus stops the operation of a laser oscillator and provides an alarm.

Abstract: A fuel injection pump device for an internal combustion engine, in which a mechanical correcting signal continuously generated from a bellows in response to change in atmospheric pressure is transmitted to an adjusting member associated with a pump to adjust an amount of fuel injected into the engine by the pump. Transmission of the mechanical correcting signal from the bellows is limited such that the mechanical correcting signal is allowed to be transmitted to the adjusting member in a range in which the atmospheric pressure is below a predetermined level, but is prevented from being transmitted to the adjusting member when the atmospheric pressure is above the predetermined level.