Abstract: A semiconductor device includes a second deep layer between a first deep layer and first current distribution layer and a base region in an active region and in a part of an inactive region adjacent to the active region. The second deep layer has a second stripe portion including lines connecting to the base region and the first deep layer. The semiconductor device further includes a second current distribution layer between the first current distribution layer and the base region and arranged between the lines of the second stripe portion. The first deep layer has a first stripe portion including a plurality of lines, and each line has an end portion connecting to a frame-shaped portion and an inner portion on an inner side of the end portion. The width of the end portion is equal to or greater than the inner portion.

Abstract: A suspension arm includes an upper member and a lower member, and the side plates of the upper member are joined to the side plates of the lower member by welding. A weld line formed by a weld part is bent and terminated near a lower ball joint. A side plate includes a substantially-linear edge and a bent edge, which is bent from an end of the substantially-linear edge and within which the weld line is terminated. The weld line along the bent edge is inclined at a given angle or greater to a stress direction near a weld end.

Abstract: A suspension arm includes an upper member and a lower member, and the side plates of the upper member are joined to the side plates of the lower member by welding. A weld line formed by a weld part is bent and terminated near a lower ball joint. A side plate includes a substantially-linear edge and a bent edge, which is bent from an end of the substantially-linear edge and within which the weld line is terminated. The weld line along the bent edge is inclined at a given angle or greater to a stress direction near a weld end.