Patents by Inventor Yasushi Nakahara
Yasushi Nakahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9356093Abstract: An isolation region includes an element isolation film and a field plate electrode. The field plate electrode overlaps the element isolation film and surrounds a first circuit when seen in a plan view. A part of the field plate electrode is also positioned on a connection transistor. A source and a drain of the connection transistor are opposite to each other through the field plate electrode when seen in a plan view. In addition, the field plate electrode is divided into a first portion including a portion that is positioned on the connection transistor, and a second portion other than the first portion.Type: GrantFiled: May 13, 2015Date of Patent: May 31, 2016Assignee: Renesas Electronics CorporationInventors: Yoshinori Kaya, Yasushi Nakahara
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Publication number: 20160148995Abstract: A semiconductor device including a first circuit region in which a first circuit whose power supply potential is a first voltage is formed; a second circuit region in which a second circuit whose power supply potential is a second voltage lower than the first voltage is formed a separation region which separates the first circuit region from the second circuit region; and a transistor which is located in the separation region and couples the second circuit to the first circuit and whose source and drain are of a first conductivity type, the separation region including an element separation film; a first field plate which overlaps with the element separation film in plan view; a plurality of conductive films which are provided over the first field plate.Type: ApplicationFiled: December 21, 2015Publication date: May 26, 2016Inventors: Yoshinori Kaya, Yasushi Nakahara, Ryo Kanda, Tetsu Toda
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Patent number: 9343453Abstract: A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.Type: GrantFiled: May 15, 2015Date of Patent: May 17, 2016Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Ryo Kanda, Tetsu Toda, Yasushi Nakahara, Yoshinori Kaya
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Patent number: 9324862Abstract: To prevent a current leak in an impurity region surrounding a transistor, in a region where a portion, of a second conductivity type region, extending from a first circuit region side toward a second circuit region side and an element separation film overlap each other in plan view, a field plate and conductive films are provided alternately from the first circuit region side toward the second circuit region side in plan view. Further, in this region, there is a decrease in the potential of the field plate and the potentials of the conductive films from the first circuit region toward the second circuit region. Further, at least one of the conductive films has a potential lower than the potential of the field plate adjacent to the conductive film on the second circuit region side in plan view. Further, this conductive film covers at least a part of the second conductivity type region without space in the extension direction of the second conductivity type region.Type: GrantFiled: March 4, 2015Date of Patent: April 26, 2016Assignee: Renesas Electronics CorporationInventors: Yoshinori Kaya, Yasushi Nakahara, Ryo Kanda, Tetsu Toda
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Patent number: 9287256Abstract: Provided is a semiconductor device including a substrate of a first conductivity type, a first circuit region, a separation region, a second circuit region, and a rectifying element. The rectifying element has a second conductivity type layer, a first high concentration second conductivity type region, a second high concentration second conductivity type region, an element isolation film, a first insulation layer, and a first conductive film. A first contact is coupled to the first high concentration second conductivity type region, and a second contact is coupled to the second high concentration second conductivity type region. A third contact is coupled to the first conductive film. The first contact, the second contact and the third contact are separated from each other.Type: GrantFiled: October 17, 2014Date of Patent: March 15, 2016Assignee: Renesas Electronics CorporationInventors: Yoshinori Kaya, Yasushi Nakahara, Azuma Araya, Ryo Kanda, Tomonobu Kurihara, Tetsu Toda
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Publication number: 20160056818Abstract: In order to reduce the cost and the like of a power control device including a semiconductor device such as a driver IC, as well as an electronic system, the driver IC includes a high side driver, a level shift circuit, first and second transistors, and a comparator circuit. The first transistor is formed in a termination area. The second transistor is formed in the termination region and is driven by a first power supply voltage. The comparator circuit is formed in a first region to drive the first transistor to be ON when the voltage of a sense node is lower than the first power supply voltage, while driving the first transistor to be OFF when the voltage of the sense node is higher than the first power supply voltage. The second transistor is a depression type transistor.Type: ApplicationFiled: August 21, 2015Publication date: February 25, 2016Inventors: Ryo KANDA, Tetsu TODA, Junichi NAKAMURA, Kazuyuki UMEZU, Tomonobu KURIHARA, Takahiro NAGATSU, Yasushi NAKAHARA, Yoshinori KAYA
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Publication number: 20150270390Abstract: To prevent a current leak in an impurity region surrounding a transistor, in a region where a portion, of a second conductivity type region, extending from a first circuit region side toward a second circuit region side and an element separation film overlap each other in plan view, a field plate and conductive films are provided alternately from the first circuit region side toward the second circuit region side in plan view. Further, in this region, there is a decrease in the potential of the field plate and the potentials of the conductive films from the first circuit region toward the second circuit region. Further, at least one of the conductive films has a potential lower than the potential of the field plate adjacent to the conductive film on the second circuit region side in plan view. Further, this conductive film covers at least a part of the second conductivity type region without space in the extension direction of the second conductivity type region.Type: ApplicationFiled: March 4, 2015Publication date: September 24, 2015Inventors: Yoshinori Kaya, Yasushi Nakahara, Ryo Kanda, Tetsu Toda
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Publication number: 20150262990Abstract: A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.Type: ApplicationFiled: May 15, 2015Publication date: September 17, 2015Inventors: Ryo KANDA, Tetsu TODA, Yasushi NAKAHARA, Yoshinori KAYA
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Publication number: 20150243731Abstract: An isolation region includes an element isolation film and a field plate electrode. The field plate electrode overlaps the element isolation film and surrounds a first circuit when seen in a plan view. A part of the field plate electrode is also positioned on a connection transistor. A source and a drain of the connection transistor are opposite to each other through the field plate electrode when seen in a plan view. In addition, the field plate electrode is divided into a first portion including a portion that is positioned on the connection transistor, and a second portion other than the first portion.Type: ApplicationFiled: May 13, 2015Publication date: August 27, 2015Inventors: Yoshinori KAYA, Yasushi NAKAHARA
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Patent number: 9114489Abstract: This disclosure provides a method of adjusting capacities of combustion chambers of a multi-cylinder engine having a cylinder head with recessed parts that partially form the combustion chambers and a mating surface for mating with a cylinder block, which includes casting a cylinder head material having flat reference surfaces on top of the recessed parts of the cylinder head, machining the cylinder head material to form the mating surface, measuring distances in a height direction from the mating surface to the reference surfaces, respectively, and adjusting machining margins of machining portions of the reference surfaces of the recessed parts based on the measured height direction distances.Type: GrantFiled: May 3, 2011Date of Patent: August 25, 2015Assignee: Mazda Motor CorporationInventors: Tsuyoshi Yamamoto, Yasushi Nakahara, Takayuki Yamada, Kazuya Hayashi, Yuichiro Ikeda
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Patent number: 9054070Abstract: An isolation region includes an element isolation film and a field plate electrode. The field plate electrode overlaps the element isolation film and surrounds a first circuit when seen in a plan view. A part of the field plate electrode is also positioned on a connection transistor. A source and a drain of the connection transistor are opposite to each other through the field plate electrode when seen in a plan view. In addition, the field plate electrode is divided into a first portion including a portion that is positioned on the connection transistor, and a second portion other than the first portion.Type: GrantFiled: November 21, 2013Date of Patent: June 9, 2015Assignee: Renesas Electronics CorporationInventors: Yoshinori Kaya, Yasushi Nakahara
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Patent number: 9048213Abstract: A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.Type: GrantFiled: July 7, 2014Date of Patent: June 2, 2015Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Ryo Kanda, Tetsu Toda, Yasushi Nakahara, Yoshinori Kaya
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Publication number: 20150115342Abstract: Provided is a semiconductor device including a substrate of a first conductivity type, a first circuit region, a separation region, a second circuit region, and a rectifying element. The rectifying element has a second conductivity type layer, a first high concentration second conductivity type region, a second high concentration second conductivity type region, an element isolation film, a first insulation layer, and a first conductive film. A first contact is coupled to the first high concentration second conductivity type region, and a second contact is coupled to the second high concentration second conductivity type region. A third contact is coupled to the first conductive film. The first contact, the second contact and the third contact are separated from each other.Type: ApplicationFiled: October 17, 2014Publication date: April 30, 2015Inventors: Yoshinori KAYA, Yasushi NAKAHARA, Azuma ARAYA, Ryo KANDA, Tomonobu KURIHARA, Tetsu TODA
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Patent number: 8952483Abstract: A potential isolation element is provided separately from a diode. An n-type low-concentration region is formed on a P-type layer. A first high-concentration N-type region is positioned in the n-type low-concentration region and is connected to a cathode electrode of the diode. A second high-concentration N-type region is positioned in the n-type low-concentration region, is disposed to be spaced from a first second-conduction-type high-concentration region, and is connected to a power supply interconnection of a first circuit. A first P-type region is formed in the n-type low-concentration region, and a bottom portion thereof is connected to the P-type layer. A ground potential is applied to the first P-type region, and the first P-type region is positioned in the vicinity of the first high-concentration N-type region.Type: GrantFiled: December 3, 2013Date of Patent: February 10, 2015Assignee: Renesas Electronics CorporationInventors: Yoshinori Kaya, Yasushi Nakahara
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Publication number: 20150008539Abstract: A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.Type: ApplicationFiled: July 7, 2014Publication date: January 8, 2015Inventors: Ryo KANDA, Tetsu TODA, Yasushi NAKAHARA, Yoshinori KAYA
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Patent number: 8820292Abstract: Provided is a spark-ignition internal combustion engine capable of ensuring engine output power while setting a geometric compression ratio of an engine body to a high value. In the spark-ignition internal combustion engine, each of a clearance between a top surface (3a) of a piston (3) located at a top dead center position and a lower surface (8a) of each of two intake valves (8) in a full-closed state, and a clearance between the top surface (3a) of the piston (3) located at the top dead center position and a lower surface (9a) of each of two exhaust valves (9) in a full-closed state, is set to 5 mm or more, and a stroke length S of the piston (3) is set to satisfy the following relation: S?0.977×B+18.2, where B is a bore diameter of a cylinder.Type: GrantFiled: October 19, 2010Date of Patent: September 2, 2014Assignee: Mazda Motor CorporationInventors: Tsuyoshi Goto, Hidetoshi Kudou, Yasushi Nakahara, Masami Nishida
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Patent number: 8776735Abstract: An intake-side space around intake ports and an exhaust-side lower space around exhaust ports are provided in a main cooling jacket portion. These spaces are connected to each other. In a sub cooling jacket portion, an exhaust-side upper space is provided at a level above the exhaust-side lower space. The main cooling jacket portion and the sub cooling jacket portion are connected to each other via a cylindrical-hole connecting passage extending vertically and separate from each other vertically via a wall portion in another area than the connecting passage. Accordingly, a cooling device of an engine which can restrain the exhaust gas from being cooled too much improperly is provided.Type: GrantFiled: June 22, 2011Date of Patent: July 15, 2014Assignee: Mazda CorporationInventors: Kazuhiro Kosugi, Yasushi Nakahara, Daijirou Ishimoto, Minori Fujino, Kazuhiro Okino
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Publication number: 20140167171Abstract: An isolation region includes an element isolation film and a field plate electrode. The field plate electrode overlaps the element isolation film and surrounds a first circuit when seen in a plan view. A part of the field plate electrode is also positioned on a connection transistor. A source and a drain of the connection transistor are opposite to each other through the field plate electrode when seen in a plan view. In addition, the field plate electrode is divided into a first portion including a portion that is positioned on the connection transistor, and a second portion other than the first portion.Type: ApplicationFiled: November 21, 2013Publication date: June 19, 2014Applicant: Renesas Electronics CorporationInventors: Yoshinori Kaya, Yasushi Nakahara
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Publication number: 20140167207Abstract: A potential isolation element is provided separately from a diode. An n-type low-concentration region is formed on a P-type layer. A first high-concentration N-type region is positioned in the n-type low-concentration region and is connected to a cathode electrode of the diode. A second high-concentration N-type region is positioned in the n-type low-concentration region, is disposed to be spaced from a first second-conduction-type high-concentration region, and is connected to a power supply interconnection of a first circuit. A first P-type region is formed in the n-type low-concentration region, and a bottom portion thereof is connected to the P-type layer. A ground potential is applied to the first P-type region, and the first P-type region is positioned in the vicinity of the first high-concentration N-type region.Type: ApplicationFiled: December 3, 2013Publication date: June 19, 2014Applicant: Renesas Electronics CorporationInventors: Yoshinori KAYA, Yasushi NAKAHARA
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Patent number: 8720406Abstract: There is provided, in one aspect of the present description, an engine. In one example, the engine comprises a cylinder block, a cylinder head, a sheet metal gasket interposed between the block and the head, a first projection projecting outwardly and laterally from a side portion of the block, and a second projection projecting outwardly and laterally from a side portion of the head, the first projection and the second projection facing each other along a coupling surface between the block and the head. The engine further comprises an extension extending from a main body of the sheet metal gasket and located between the first projection and the second projection, and a resilient portion which is provided in the extension, formed resiliently in a direction perpendicular to the coupling surface, and compressed between the first projection and the second projection when the head is fastened on the block.Type: GrantFiled: November 1, 2010Date of Patent: May 13, 2014Assignee: Mazda Motor CorporationInventors: Naoyuki Abe, Kazuhiro Tomizawa, Yasushi Nakahara, Kiyonori Nagato, Yasuhiro Sudou, Hiroshi Hosokawa, Yuma Miyauchi, Jun Nishikawa, Osamu Torobu, Hiroyuki Abe, Kazuhiro Matsuoka