Abstract: A thermoelectric conversion material in a wire structure or quasi-one-dimensional structure is fabricated simply and with good reproducibility. In one mode of the present invention, a thermoelectric conversion structure 100 is provided, having a SrTiO3 substrate 10 having a (210) plane substrate surface and having a concave-convex structure including (100) plane terrace portions 12, 14 and step portions 16 extending along the in-plane [001] axis of the substrate surface, and a thermoelectric conversion material 22 formed on the surface of at least a portion of the concave-convex structure.

Abstract: An object of the invention is to ensure the thermal stability of magnetization even when a magnetic memory element is miniaturized. A magnetic memory element includes a first magnetic layer (22), an insulating layer (21) that is formed on the first magnetic layer (22), and a second magnetic layer (20) that is formed on the insulating layer (21). At least one of the first magnetic layer (22) and the second magnetic layer (20) is strained and deformed so as to be elongated in an easy magnetization axis direction of the magnetic layer (22) or (20) or compressive strain (101) remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.

Abstract: A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side surfaces of the first and second magnetic layers, where at least one of the first magnetic layer and the second magnetic layer is strained and deformed so as to be elongated in an easy magnetization axis direction of the first magnetic layer or the second magnetic layer or compressive strain remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.

Abstract: In aspects of the invention, a strongly correlated nonvolatile memory element is provided which exhibits phase transitions and nonvolatile switching functions through electrical means. In an aspect of the invention, a strongly correlated nonvolatile memory element is provided including, on a substrate, a channel layer, a gate electrode, a gate insulator, a source electrode, and a drain electrode. The channel layer includes a strongly correlated oxide thin film, and is formed of a perovskite type manganite which exhibits a charge-ordered phase or an orbital-ordered phase; the gate insulator is formed in contact with at least a portion of a surface or interface of the channel layer and is sandwiched between the channel layer and the gate electrode, and the source electrode and drain electrode are formed in contact with at least a portion of the channel layer.

Abstract: An article including a perovskite manganese (Mn) oxide thin film, includes a substrate having an oriented perovskite structure that is (m10) oriented, where 19?m?2, and having an [100] axis direction; and a perovskite manganese (Mn) oxide thin film having a perovskite crystal lattice containing barium Ba and a rare earth element Ln in A sites of the perovskite crystal lattice, the perovskite manganese (Mn) oxide thin film being formed on the substrate so as to cover at least part of a surface of the substrate, and having atomic planes stacked in a pattern of LnO—MnO2—BaO—MnO2-LnO . . . in the [100] axis direction of the substrate. The perovskite manganese (Mn) oxide thin film provided thoroughly exploits the resistance changes caused by charge and orbital ordering in the perovskite manganese oxide.

Abstract: A magnetic memory element and a method of driving such an element are disclosed. The magnetic memory element has a magnetic tunnel junction portion with a spin-valve structure having a perpendicular magnetization free layer formed of a perpendicular magnetization film, a perpendicular magnetization pinned layer formed of a perpendicular magnetization film, and a nonmagnetic layer sandwiched between the perpendicular magnetization free layer and the perpendicular magnetization pinned layer, and records information by application of an electric pulse to the magnetic tunnel junction portion. An in-plane magnetization film, interposed in the path of the electric pulse, is disposed in the magnetic tunnel junction portion. The in-plane magnetization film is configured so as to exhibit antiferromagnetic (low-temperature)-ferromagnetic (high-temperature) phase transitions depending on temperature changes based on application of the electric pulse to the magnetic tunnel junction portion.

Abstract: In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.

Abstract: A spin-valve element has a pair of ferromagnetic layers having mutually different coercive forces, sandwiching an insulating layer or a nonmagnetic layer therebetween. The in-plane shape of the spin-valve element is substantially circular in shape but is provided, in the peripheral portion, with a plurality of cutouts NS, NW, NE, NN. Preferably, the shape of at least one cutout be made different from that of others. Moreover, a storage device that employs such a spin-valve element is provided.

Abstract: Provided is a spin valve element capable of performing multi-value recording, which includes a pair of ferromagnetic layers having different coercivities from each other, and sandwiching an insulating layer or a non-magnetic layer. The ferromagnetic layer having the smaller coercivity has a substantially circular in-plane profile, and a plurality of island-shaped non-magnetic portions IN, IE, IW, and IS are included. In addition, a storage device is manufactured by using such a spin valve element.

Abstract: The present invention provides a crystalline substance that has an uneven structure extending along the direction of a crystal axis. An aspect of the present invention provides a crystalline substance 1, which has a surface 10L that exposes an oxide crystal thereon and extends in a direction of a crystal axis of the oxide crystal, wherein the surface 10L has an uneven structure that is configured by faces 11L to 14L extending in at least three orientations along the crystal axis.

Abstract: A thermoelectric conversion material in which the electron spatial distribution assumes a wire structure or a quasi-one-dimensional structure is fabricated. A mode of the present invention provides a thermoelectric conversion structure 100 of a single crystal 10 of SrTiO3 having a (210) plane surface or interface, and having, in the surface or interface, a concave-convex structure including terrace portions 12, 14 in (100) planes and step portions 16 extending along the surface in-plane [001] axis.

Abstract: A thermoelectric conversion material in a wire structure or quasi-one-dimensional structure is fabricated simply and with good reproducibility. In one mode of the present invention, a thermoelectric conversion structure 100 is provided, having a SrTiO3 substrate 10 having a (210) plane substrate surface and having a concave-convex structure including (100) plane terrace portions 12, 14 and step portions 16 extending along the in-plane [001] axis of the substrate surface, and a thermoelectric conversion material 22 formed on the surface of at least a portion of the concave-convex structure.

Abstract: A conductive thin film including graphene and having improved conductivity is disclosed. The conductive thin film is composed of a superlattice structure that includes a first and second graphene films formed of respective sheets of carbon atoms that each have at least one atomic layer; and an intercalation film sandwiched between the first and second graphene films. The superlattice structure may have a plurality of stacking units that are stacked and that are each formed of one graphene film and one intercalation film; and the first and second graphene films may have graphene films belonging to two mutually adjacent stacking units from among the plurality of stacking units. The conductive thin film may be transparent and, when the superlattice structure has a plurality of stacking units, a sum total of atomic layers of the sheets of carbon atoms for all the stacking units is ten or fewer.

Abstract: Some aspects of the invention provide an oxide substrate having a flat surface at the atomic layer level, and suited to forming a thin film of a perovskite manganese oxide. One aspect of the invention provides a single-crystal oxide substrate 10 having a single-crystal supporting substrate 1 of (210)-oriented SrTiO3 and a single-crystal underlayer 2 of (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7, which is LSAT, formed on the (210) plane surface of the supporting substrate. In another aspect of the present invention, the LSAT underlayer 2A is formed in an amorphous state. Other aspects of the invention are also disclosed.

Abstract: A magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current. The magnetic memory element includes a magnetic tunnel junction having a first magnetic body including a perpendicular magnetization film, an insulating layer, and a second magnetic body serving as a storage layer including a perpendicular magnetization film, which are sequentially stacked. A thermal expansion layer is disposed in contact with the magnetic tunnel junction portion. The second magnetic body is deformed in a direction in which the cross section thereof increases or decreases by the thermal expansion or contraction of the thermal expansion layer due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction.

Abstract: Provided is a strongly correlated oxide field effect element demonstrating a phase transition and a switching function induced by electrical means. The strongly correlated oxide field effect element is a strongly correlated oxide field effect element 100 including a channel layer 2 constituted by a strongly correlated oxide film, a gate electrode 14, a gate insulating layer 31, a source electrode 42, and a drain electrode 43. The channel layer 2 includes an insulator-metal transition layer 22 of a strongly correlated oxide and a metallic state layer 21 of a strongly correlated oxide that are stacked on each other. The thickness t of the channel layer 2, the thickness t1 of the insulator-metal transition layer 22, and the thickness t2 of the metallic state layer 21 satisfy the following relationship with critical thicknesses t1c and t2c for respective metallic phases of the layers: t=t1+t2?t1c>t2c, where t1<t1c and t2<t2c.

Abstract: An article including a perovskite manganese (Mn) oxide thin film, includes a substrate having an oriented perovskite structure that is (m10) oriented, where 19?m?2, and having an [100 ] axis direction; and a perovskite manganese (Mn) oxide thin film having a perovskite crystal lattice containing barium Ba and a rare earth element Ln in A sites of the perovskite crystal lattice, the perovskite manganese (Mn) oxide thin film being formed on the substrate so as to cover at least part of a surface of the substrate, and having atomic planes stacked in a pattern of LnO-MnO2-BaO-MnO2-LnO . . . in the [100] axis direction of the substrate. The perovskite manganese (Mn) oxide thin film provided thoroughly exploits the resistance changes caused by charge and orbital ordering in the perovskite manganese oxide.

Abstract: An article including a perovskite manganese oxide thin film is composed of a substrate; and a perovskite manganese oxide thin film formed on the substrate and having an orientation that is an (m10) orientation where 19?m?2. When m is 2 the perovskite manganese oxide thin film has a (210) orientation. The invention provides a perovskite manganese oxide thin film having a transition temperature at room temperature or above, which is higher than that of the bulk oxide, by exploiting the substrate strain and the symmetry of the crystal lattice.

Abstract: A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9?n?1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio.

Abstract: A magnetic memory element having a memory cell of size 4F2 is provided that realizes a crosspoint-type memory. In the magnetic memory element, a first magnetic layer, a third magnetic layer (spin polarization enhancement layer), an intermediate layer, a fourth magnetic layer (spin polarization enhancement layer), and a second magnetic layer are stacked in order. The intermediate layer is made of an insulating material or a nonmagnetic material. The second magnetic layer is composed of a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer is composed of a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.