Abstract: The present invention easily displays a frequency response and a time response to a user. The simulation device of the present invention comprises: a frequency response function computing part (53) computing a frequency response function according to a measured value of a response of a mechanical system (7), a time response outputting part (44) executing time response simulation, a frequency response outputting part (45) outputting a frequency response characteristic and a display control part (26) displaying the time response simulation and frequency response characteristic simultaneously or selectively.

Abstract: The present invention realizes a motor control apparatus and the like capable of obtaining an appropriate frequency characteristic. The motor control apparatus of the present invention includes a command value generating portion (10), a torque saturation detecting portion (61) for determining whether a driving value based on a command value exceeds a driving value capable of being output from the apparatus, a current saturation detecting portion (71), a voltage saturation detecting portion (72), and a command value correcting portion (20) for correcting the command value when the driving value is determined as being exceeded.

Abstract: The present invention realizes a motor control apparatus and the like capable of obtaining an appropriate frequency characteristic. The motor control apparatus of the present invention includes a command value generating portion (10), a torque saturation detecting portion (61) for determining whether a driving value based on a command value exceeds a driving value capable of being output from the apparatus, a current saturation detecting portion (71), a voltage saturation detecting portion (72), and a command value correcting portion (20) for correcting the command value when the driving value is determined as being exceeded.

Abstract: The present invention easily displays a frequency response and a time response to a user. The simulation device of the present invention comprises: a frequency response function computing part (53) computing a frequency response function according to a measured value of a response of a mechanical system (7), a time response outputting part (44) executing time response simulation, a frequency response outputting part (45) outputting a frequency response characteristic and a display control part (26) displaying the time response simulation and frequency response characteristic simultaneously or selectively.

Abstract: A positioning function when a width-across-flats dimension of a tool is adjusted and a function of preventing a deviation in the adjusted width-across-flats dimension are fulfilled by a projection of a flat spring part being fitted into each fitting recess. By selecting the line of a fitting recess to be used according to the standard of an object to be clamped such as a nut, the positioning function and the function of preventing a deviation can be easily and reliably fulfilled even for the width-across-flats dimensions of different standards.

Abstract: A positioning function when a width-across-flats dimension of a tool is adjusted and a function of preventing a deviation in the adjusted width-across-flats dimension are fulfilled by a projection of a flat spring part being fitted into each fitting recess. By selecting the line of a fitting recess to be used according to the standard of an object to be clamped such as a nut, the positioning function and the function of preventing a deviation can be easily and reliably fulfilled even for the width-across-flats dimensions of different standards.

Abstract: This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

Abstract: The present invention provides a highly safe pharmaceutical preparation effective for diseases caused by MMP-2 and/or MMP-9. The pharmaceutical preparation contains, as an active ingredient, at least one member selected from the group consisting of thiazole derivatives represented by Formula (1): wherein R1 represents a phenyl group that may have 1 to 3 lower alkoxy groups as substituents on the phenyl ring, and R2 represents a pyridyl group that may have 1 to 3 carboxyl groups as substituents on the pyridine ring, and salts thereof. Such thiazole derivatives have MMP-2 and/or MMP-9 inhibitory activity.

Abstract: An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

Abstract: This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

Abstract: The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.

Abstract: A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emiting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.

Abstract: An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having excellent heat resistance, which device is resistive to an increase in the forward operation voltage (VF) caused by mild heating performed after formation of the light-emitting device (e.g., heating to about 300° C. during mounting of the light-emitting device).

Abstract: In a multiplexing/demultiplexing apparatus, readiness of stand-by circuits is monitored through a variety of switching arrangements, by routing a monitoring signal through the circuits. In one alternative embodiment, level correcting means are provided so that the monitoring signal is kept at the proper level, thus ensuring accurate monitoring of the stand-by circuits.