Abstract: A dynamic random access memory device having one transistor type memory cells is disclosed. The memory cell includes a trench type storage capacitor and a transfer gate transistor. The dielectric film of the capacitor is formed in the trench such that the upper part of the film above the upper wall of the trench adjacent to the major surface of the substrate is thicker than the other parts of the film in the trench.

Abstract: A semiconductor device comprises a semiconductor substrate, an insulating film formed on a major surface of the substrate a lower wiring layer formed on the insulating film, a borophosphosilicate glass film covering the lower wiring layer and the insulating film, a phosphosilicate glass film having a low phosphorus concentration and provided on the borophosphosilicate glass film, and a polycrystalline silicon layer doped with an impurity and provided on the phosphosilicate glass. According to the structure, the polycrystalline silicon layer maintains the normal state. Therefore, the silicon layer can be precisely etched for patterning and a wiring layer made of the silicon layer is never moved in a following process step such as thermal step. Further, even if another wiring layer of aluminum is formed on the phosphosilicate glass film, the aluminum wiring layer is not broken above the corner of the lower wiring layer, and is hardly corroded by invaded water into a plastic package.

Abstract: A read only-memory (ROM) is manufactured by a process which produces memories having customized codes from partially completed semiconductor chips. The chips are manufactured to a step where a matrix of apertures or windows are formed in an oxide layer at every cross point of every potential code. Then, a silicon dioxide film is formed over the entire surface of the chip including the window apertures. At this stage, the chip is stored as a general purpose stock item. When an order is received to prepare a ROM chip with customized codes, a mask is formed to etch and reopen the apertures or windows in the dioxide film at the encoded cross points. Then, suitable contact material is deposited over the surface of the chip, thereby completing a contact at each of the reopened apertures or windows. As a result, the normal lead time required for a manufacturer to make a customized ROM is reduced from, say, 4.5 to 6 days to a period of approximately 1.5 to 2 days.

Abstract: A process is disclosed for preparing a mask, such as a photo-mask, used in a selective etching process in the manufacture of a semiconductor device or a protective mask for use in a process for selectively providing a porous layer of silicon or for anodic oxidation of a metal layer, in which ions accelerated at a predetermined voltage are implanted into a photo-resist film to a predetermined dose level.

Abstract: A drilling system includes a drill pipe and a cutting means located therein. A locking mechanism with said drill pipe is provided on said cutting means and is operatively connected with a spearhead engageable with an engaging mechanism of a pulling-up device so that, when the spearhead is pulled, an inner tube and outer tube forming a part of the locking mechanism may move relative to each other to unlock the drill pipe and cutting means for quickly and easily pulling up the latter.