Abstract: A plastic optical fiber is excellent in translucency, heat resistance, resistance to environment and the like, and has highly excellent flexibility. The plastic optical fiber contains a core and at least one layer of cladding, wherein the bending elastic modulus of the innermost layer of the cladding is 20 to 70 MPa, the glass transition temperature of the innermost layer of the cladding is 10° C. or lower, and the storage elastic modulus of the innermost layer of the cladding at 30° C. is 1×106 Pa to 4×107 Pa.

Abstract: A plastic optical fiber is excellent in translucency, heat resistance, resistance to environment and the like, and has highly excellent flexibility. The plastic optical fiber contains a core and at least one layer of cladding, wherein the bending elastic modulus of the innermost layer of the cladding is 20 to 70 MPa, the glass transition temperature of the innermost layer of the cladding is 10° C. or lower, and the storage elastic modulus of the innermost layer of the cladding at 30° C. is 1×106 Pa to 4×107 Pa.

Abstract: In order to provide an adhesive composition for electronic components that is excellent in adhesion durability under long-term high temperature conditions, thermal cyclability, and insulation reliability, designed is an adhesive composition for electronic components containing a thermoplastic resin (a), an epoxy resin (b), a hardener (c), and an organopolysiloxane (d), wherein the glass transition temperature (Tg) after curing is ?10° C. to 50° C. and the rate of change of Tg after heat-treating the composition at 175° C. for 1000 hours is 15% or less.

Abstract: In order to provide an adhesive composition for electronic components that is excellent in adhesion durability under long-term high temperature conditions, thermal cyclability, and insulation reliability, designed is an adhesive composition for electronic components containing a thermoplastic resin (a), an epoxy resin (b), a hardener (c), and an organopolysiloxane (d), wherein the glass transition temperature (Tg) after curing is ?10° C. to 50° C. and the rate of change of Tg after heat-treating the composition at 175° C. for 1000 hours is 15% or less.

Abstract: An adhesive sheet for a semiconductor connecting substrate consisting of a laminate having an adhesive layer on a substrate, wherein said adhesive layer contains a thermoplastic resin (A) and an epoxy resin (B) and said epoxy resin (B) contains at least one epoxy resin (B) selected from (I) dicyclopentadiene skeleton-containing epoxy resins, (II) terpene skeleton-containing epoxy resins, and (III) biphenyl skeleton-containing epoxy resins, as an essential component; an adhesive-backed tape for TAB consisting of a laminate having an adhesive layer and a protective film layer on a flexible organic insulating film. The adhesive sheet for a semiconductor connecting substrate, the adhesive-backed tape for TAB and the adhesive-backed tape for wire bonding connection of the present invention are excellent in adhesive strength, insulatability, dimensional accuracy, etc.

Abstract: An adhesive sheet for a semiconductor connecting substrate consisting of a laminate having an adhesive layer on a substrate, wherein said adhesive layer contains a thermoplastic resin (A) and an epoxy resin (B) and said epoxy resin (B) contains at least one epoxy resin (B) selected from (I) dicyclopentadiene skeleton-containing epoxy resins, (II) terpene skeleton-containing epoxy resins, and (III) biphenyl skeleton-containing epoxy resins, as an essential component; an adhesive-backed tape for TAB consisting of a laminate having an adhesive layer and a protective film layer on a flexible organic insulating film. The adhesive sheet for a semiconductor connecting substrate, the adhesive-backed tape for TAB and the adhesive-backed tape for wire bonding connection of the present invention are excellent in adhesive strength, insulatability, dimensional accuracy, etc.

Abstract: An adhesive sheet for a semiconductor connecting substrate consisting of a laminate having an adhesive layer on a substrate, wherein said adhesive layer contains a thermoplastic resin (A) and an epoxy resin (B) and said epoxy resin (B) contains at least one epoxy resin (B) selected from (I) dicyclopentadiene skeleton-containing epoxy resins, (II) terpene skeleton-containing epoxy resins, (III) biphenyl skeleton-containing epoxy resins and (IV) naphthalene skeleton-containing epoxy resins as an essential component; an adhesive-backed tape for TAB consisting of a laminate having an adhesive layer and a protective film layer on a flexible organic insulating film, wherein said adhesive layer has a softening temperature of 60 to 110° C. after having been cured and 50 hours or more in the insulation resistance dropping time after having been allowed to stand in an environment of 130° C.

Abstract: Disclosed herein is an epoxy resin compound including an epoxy resin (A), a hardener (B), and an inorganic filler, characterized in that said inorganic filler contains silica (C) as an essential component, said hardener (B) is one which contains at least two phenolic hydroxyl groups and/or naphtholic hydroxyl groups in the molecule, and said silica (C) contains 1-99 wt % of synthetic silica and 99-1 wt % of natural fused silica. Disclosed also herein is a semiconductor device having a semiconductor element sealed therein with said epoxy resin compound. The epoxy resin compound does not cause such troubles as short shot, resin peeling, wire breakage, stage shift, and vent clogging at the time of molding. In addition, when used as a sealing material, it yields semiconductor devices which have good reliability at high temperature and high humidity and good resistance to soldering heat.

Abstract: An epoxy resin composition composed of an epoxy resin (A), a hardener (B), and an inorganic filler (C), characterized in that the content of the inorganic filler (C) is 70-97 wt % and the inorganic filler (C) contains 0.1-50 wt % of alumina. When used to seal semiconductor devices, it exhibits good moldability and imparts to the sealed semiconductors good flame retardance, solder heat resistance, and reliability at high temperatures.

Abstract: Disclosed herein is an epoxy resin compound including an epoxy resin (A), a hardener (B), and an inorganic filler, characterized in that said inorganic filler contains silica (C) as an essential component, said hardener (B) is one which contains at least two phenolic hydroxyl groups and/or naphtholic hydroxyl groups in the molecule, and said silica (C) contains 1-99 wt % of synthetic silica and 99-1 wt % of natural fused silica. Disclosed also herein is a semiconductor device having a semiconductor element sealed therein with said epoxy resin compound. The epoxy resin compound does not cause such troubles as short shot, resin peeling, wire breakage, stage shift, and vent clogging at the time of molding. In addition, when used as a sealing material, it yields semiconductor devices which have good reliability at high temperature and high humidity and good resistance to soldering heat.

Abstract: A semiconductor-encapsulating composition comprised of (i) an epoxy resin preferably containing a bifunctional biphenyl-skeletal epoxy resin and/or a bifunctional naphthalene-skeletal epoxy resin, (ii) a curing agent containing 4,4'-dihydroxybiphenyl, and (iii) 70 to 95% by weight, based on the total epoxy resin composition, of a filler.

Abstract: Disclosed is a semiconductor-encapsulating epoxy resin composition comprising (A) an epoxy resin. (B) a curing agent, and (C) fused silica which has been surface-treated with a silane coupling agent having a secondary amino group. This composition has a good moldability and reliability, and a good solder dipping stability.

Abstract: Disclosed is a semiconductor device-encapsulating epoxy resin composition comprising (i) an epoxy resin (A) containing at least one of a bifunctional epoxy resin (a1) having a biphenyl skeleton and a bifunctional epoxy resin (a2) having a naphthalene skeleton, (ii) a curing agent (B), and (iii) a filler containing fused silica (C) having a specified kind and specified mean particle diameter. This composition has an excellent heat resistance of solder, and further reliability after thermal cycles and reliability after solder-bath dipping.