Abstract: An ammonia decomposition system includes a decomposition unit and a controller. The decomposition unit decomposes ammonia. The controller controls the decomposition rate of ammonia in the decomposition unit.

Abstract: A method for generating carbon monoxide includes: a generation step of generating carbon monoxide by supplying carbon dioxide to a first material containing a first element included in elements of group 11 and a second element included in elements of groups 8 to 10, 12, and 13; and a reduction step of reducing the second element oxidized in the generation step by supplying hydrogen to a second material containing the oxidized second element and the first element. The generation step and the reduction step are repeated a plurality of times.

Abstract: The present invention provides a pyrolysis tube for manufacturing olefin which tube can improve a yield of olefin in a pyrolysis reaction of a hydrocarbon raw material. The pyrolysis tube (1A) for manufacturing olefin includes a tubular base material (2) made of a heat resistant metal material and a dehydrogenating catalyst (4A) which is supported on an inner surface of the tubular base material (2).

Abstract: Provided is a dehydrogenating catalyst that is capable of preventing or reducing coking and improving the yield of an olefin in a pyrolysis reaction of a hydrocarbon raw material. A dehydrogenating catalyst (4A) for production of an olefin contains, as a catalyst component, at least one of La and Ce, wherein, when the dehydrogenating catalyst (4A) does not contain Ce, the dehydrogenating catalyst (4A) contains at least one element selected from the group consisting of Ba, Fe, and Mn, or wherein, when the dehydrogenating catalyst (4A) contains Ce, the dehydrogenating catalyst (4A) contains at least one of Fe and Mn.

Abstract: The present invention provides a pyrolysis tube for manufacturing olefin which tube can improve a yield of olefin in a pyrolysis reaction of a hydrocarbon raw material. The pyrolysis tube (1A) for manufacturing olefin includes a tubular base material (2) made of a heat resistant metal material and a dehydrogenating catalyst (4A) which is supported on an inner surface of the tubular base material (2).

Abstract: A method which can efficiently produce ammonia at low temperature and low pressure and which can respond flexibly to an unsteady electrical power supply condition. In addition, a catalyst which is excellent in activity for synthesizing ammonia and which is used in a method for efficiently producing ammonia without regard to supply condition and supply location of electrical power. The method is characterized in that a reactor for synthesizing ammonia is used, and the reactor has a pair of electrodes, a voltage applying means for applying voltage between the electrodes, a catalyst between the electrodes, a raw material gas inlet port, and an ammonia-containing gas discharge port, and including introducing at least nitrogen and hydrogen as a raw material gas into the reactor for synthesizing ammonia, and applying a voltage to the electrodes of the reactor for synthesizing ammonia, wherein electrical discharge does not occur by the voltage.

Abstract: The objective of the present invention is to provide a method which can efficiently produce ammonia at low temperature and low pressure and which can respond flexibly to an unsteady electrical power supply condition. In addition, the objective of the present invention is to provide a catalyst which is excellent in activity for synthesizing ammonia and which is used in a method for efficiently producing ammonia without regard to supply condition and supply location of electrical power.

Abstract: To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.

Abstract: To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.

Abstract: To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.

Abstract: To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.

Abstract: To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.

Abstract: There is provided a semiconductor device having resistance elements small in temperature dependence of the resistance value. The semiconductor device has metal resistance element layers. The metal resistance element layer includes a resistance film layer. The other metal resistance element layer includes another metal resistance film layer. The metal resistance film layer is one of titanium nitride resistance and tantalum nitride resistance. The other metal resistance film layer is the other of the titanium nitride resistance and the tantalum nitride resistance. The resistance value of titanium nitride resistance has a positive temperature coefficient. Whereas, the resistance value of tantalum nitride resistance has a negative temperature coefficient. A contact plug electrically couples the metal resistance film layer with the other metal resistance film layer.

Abstract: The object of the present invention is to provide the catalyst used in a process for preparation of alkenylaromatic compounds by dehydrogenating alkyl aromatic compounds by means of steam as a diluent, wherein the catalyst prevents the block and corrosion caused by the alkali metal component migrated from the catalyst, and the process for producing same, and the dehydrogenation method using it. The solid catalyst which has the high redox ability and comprises no alkali metal component migrated from the catalyst in the presence of steam with high temperature is used.

Abstract: A reforming catalyst (6) induces an isomerization reforming reaction and a decomposition reforming reaction of a gasoline fuel. Injectors (27, 33, 35, 36) supply an isomerized fuel generated by the isomerization reforming reaction and a decomposed fuel generated by the decomposition reforming reaction respectively to the internal combustion engine (1). The ratio of the isomerization reforming reaction and the decomposition reforming reaction depends on a catalyst temperature, and can be altered arbitrarily by controlling an air supply amount to the catalyst (6) via an air amount regulating valve (14) and a fuel supply amount to the catalyst (6) via a fuel injector (8) and thereby controlling the catalyst temperature.

Abstract: To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.

Abstract: Disclosed is a novel method for steam reforming, by which selectivity to carbon monoxide is high, which is free from various side reactions, which may be carried out at a lower temperature and at a lower pressure than the conventional methods, and which may be carried out even if a catalyst is not used. In the method of the present invention, direct current pulse discharge is performed in a mixed gas containing a gaseous chain hydrocarbon and water vapor so as to react the chain hydrocarbon and the water vapor, thereby generating hydrogen and carbon monoxide.

Abstract: A reforming catalyst (6) induces an isomerization reforming reaction and a decomposition reforming reaction of a gasoline fuel. Injectors (27, 33, 35, 36) supply an isomerized fuel generated by the isomerization reforming reaction and a decomposed fuel generated by the decomposition reforming reaction respectively to the internal combustion engine (1). The ratio of the isomerization reforming reaction and the decomposition reforming reaction depends on a catalyst temperature, and can be altered arbitrarily by controlling an air supply amount to the catalyst (6) via an air amount regulating valve (14) and a fuel supply amount to the catalyst (6) via a fuel injector (8) and thereby controlling the catalyst temperature.

Abstract: There has been conventionally known a method for producing hydrogen and oxygen through reactions of hydrocarbon and vapor (steam reforming method). This steam reforming method has been so far practiced at a high temperature of 600° C. to 850° C. and high pressure of 5 to 100 atmospheres by using nickel catalyst including alumina as a carrier.

Abstract: Disclosed is a novel method for steam reforming, by which selectivity to carbon monoxide is high, which is free from various side reactions, which may be carried out at a lower temperature and at a lower pressure than the conventional methods, and which may be carried out even if a catalyst is not used. In the method of the present invention, direct current pulse discharge is performed in a mixed gas containing a gaseous chain hydrocarbon and water vapor so as to react the chain hydrocarbon and the water vapor, thereby generating hydrogen and carbon monoxide.