Patents by Inventor Yasushi Shizuki
Yasushi Shizuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9608523Abstract: According to an embodiment, a regulator includes: a voltage control circuit to supply a voltage; a clock signal output circuit to output a clock signal controlled by the voltage supplied from the voltage control circuit; and a current control circuit to supply the voltage supplied from the voltage control circuit to the clock signal output circuit, the current control circuit make to flow a dummy current which is determined based on the voltage, and stopping flowing the dummy current at a timing when the clock signal output circuit outputs the clock signal.Type: GrantFiled: March 10, 2016Date of Patent: March 28, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Takayuki Iwai, Yasushi Shizuki
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Publication number: 20170077808Abstract: According to an embodiment, a regulator includes: a voltage control circuit to supply a voltage; a clock signal output circuit to output a clock signal controlled by the voltage supplied from the voltage control circuit; and a current control circuit to supply the voltage supplied from the voltage control circuit to the clock signal output circuit, the current control circuit make to flow a dummy current which is determined based on the voltage, and stopping flowing the dummy current at a timing when the clock signal output circuit outputs the clock signal.Type: ApplicationFiled: March 10, 2016Publication date: March 16, 2017Inventors: Takayuki Iwai, Yasushi Shizuki
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Patent number: 7349506Abstract: A method and semiconductor integrated circuit in which a receiver receives reception data and executes reception processing on the basis of a clock signal supplied from a PLL and a transmitter which receives parallel transmission data and executes serial transmission processing on the basis of the clock signal, and having a loop back function of supplying data output from the transmitter to the receiver for test. The receiver capable of executing control so as to make a phase of the input data coincide with that of a recovery clock.Type: GrantFiled: July 29, 2004Date of Patent: March 25, 2008Assignee: Kabushiki Kaisha ToshibaInventor: Yasushi Shizuki
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Publication number: 20050201500Abstract: According to the present invention, there is provided a semiconductor integrated circuit having a receiver which receives reception data and executes reception processing on the basis of a clock signal supplied from a PLL and a transmitter which receives parallel transmission data and executes serial transmission processing on the basis of the clock signal, and having a loop back function of supplying data output from the transmitter to the receiver for test, the receiver, as a CDR circuit, executing control so as to make the phase of the input data coincide with that of the recovery clock by a negative feedback loop having a phase comparator which receives input data and a recovery clock, compares a phase of the input data with that of the recovery clock, and outputs recovery data and a phase comparison result in a serial form, a serial/parallel conversion circuit which receives the phase comparison result, or the phase comparison result and the recovery data from the phase comparator, executes serial/parallType: ApplicationFiled: July 29, 2004Publication date: September 15, 2005Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Yasushi Shizuki
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Patent number: 6882204Abstract: A semiconductor integrated circuit device includes a differential output driver circuit arranged at each I/O portion, and a delay element. The differential output driver circuit receives a pair of differential signals generated by a circuit on the input stage. An output signal from the differential output driver circuit is transmitted through the first and second signal lines. Each of the first and second signal lines includes a global interconnection, bump, and transmission line. The delay element is inserted in at least one of the first and second signal lines. The delay element delays signals passing through the signal lines so as to make the delays of the signals substantially equal to each other, compensating for the signal delay time generated by the line length difference.Type: GrantFiled: June 25, 2004Date of Patent: April 19, 2005Assignee: Kabushiki Kaisha ToshibaInventor: Yasushi Shizuki
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Publication number: 20040233704Abstract: A semiconductor integrated circuit device includes a differential output driver circuit arranged at each I/O portion, and a delay element. The differential output driver circuit receives a pair of differential signals generated by a circuit on the input stage. An output signal from the differential output driver circuit is transmitted through the first and second signal lines. Each of the first and second signal lines includes a global interconnection, bump, and transmission line. The delay element is inserted in at least one of the first and second signal lines. The delay element delays signals passing through the signal lines so as to make the delays of the signals substantially equal to each other, compensating for the signal delay time generated by the line length difference.Type: ApplicationFiled: June 25, 2004Publication date: November 25, 2004Inventor: Yasushi Shizuki
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Publication number: 20040212404Abstract: A semiconductor integrated circuit device includes a differential output driver circuit arranged at each I/O portion, and a delay element. The differential output driver circuit receives a pair of differential signals generated by a circuit on the input stage. An output signal from the differential output driver circuit is transmitted through the first and second signal lines. Each of the first and second signal lines includes a global interconnection, bump, and transmission line. The delay element is inserted in at least one of the first and second signal lines. The delay element delays signals passing through the signal lines so as to make the delays of the signals substantially equal to each other, compensating for the signal delay time generated by the line length difference.Type: ApplicationFiled: July 17, 2003Publication date: October 28, 2004Inventor: Yasushi Shizuki
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Patent number: 6801071Abstract: A semiconductor integrated circuit device includes a differential output driver circuit arranged at each I/O portion, and a delay element. The differential output driver circuit receives a pair of differential signals generated by a circuit on the input stage. An output signal from the differential output driver circuit is transmitted through the first and second signal lines. Each of the first and second signal lines includes a global interconnection, bump, and transmission line. The delay element is inserted in at least one of the first and second signal lines. The delay element delays signals passing through the signal lines so as to make the delays of the signals substantially equal to each other, compensating for the signal delay time generated by the line length difference.Type: GrantFiled: July 17, 2003Date of Patent: October 5, 2004Assignee: Kabushiki Kaisha ToshibaInventor: Yasushi Shizuki
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Patent number: 6130483Abstract: A semiconductor module has an MMIC chip flip-chip-mounted on a board. The MMIC chip has a ground line and bumps. The board has through holes and a ground electrode. These ground line, bumps, through holes, and ground electrode form a conductor continuum that defines a quasi-cavity. The module is designed so that the resonance frequency (fr) of the quasi-cavity is higher than the maximum operation frequency (fumax) of the MMIC chip. This prevents signal disturbance due to agreement between the resonance frequency (fr) and an operation frequency (fu) of the MMIC chip. If the MMIC chip is provided with bias circuits having MIM capacitors, the MIM capacitors are formed within the quasi-cavity. The quasi-cavity blocks magnetic fields generated by the MIM capacitors from leaking outside and badly affecting electronic parts arranged around the MMIC chip.Type: GrantFiled: March 5, 1998Date of Patent: October 10, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Yasushi Shizuki, Mitsuo Konno
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Patent number: 5914536Abstract: A semiconductor device includes a wiring board having a main surface and a plurality of pad electrodes formed on the main surface, a rectangular semiconductor element having a main surface facing the main surface of the wiring board and mounted on the main surface of the wiring board, a solder resist formed to surround the semiconductor element with a preset distance therefrom on the main surface of the wiring board, a plurality of terminal electrodes formed on the end portion of the main surface of the semiconductor element, and a plurality of solder bumps for electrically connecting the plurality of pad electrodes to the plurality of terminal electrodes with a gap provided between the main surface of the wiring board and the main surface of the semiconductor element, wherein each of the plurality of pad electrodes includes at least a portion which extends from substantially under a corresponding one of the plurality of terminal electrodes of the semiconductor element to the solder resist lying outside the sType: GrantFiled: July 5, 1996Date of Patent: June 22, 1999Assignee: Kabushiki Kaisha ToshibaInventors: Yasushi Shizuki, Yuji Iseki, Naoko Ono, Kunio Yoshihara, Masayuki Saito, Hiroshi Yamada, Kazuki Tateyama
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Patent number: 5898909Abstract: Disclosed is an ultra high frequency radio communication apparatus having: a receiver antenna; a transmitter antenna; an IC chip being electrically connected to the receiver antenna and the transmitter antenna; a substrate on which the receiver antenna, the transmitter antenna and the IC chip are mounted; an input terminal for inputting to the IC chip a base band input signal; an output terminal for outputting a base band output signal from the IC chip; and a control signal terminal for inputting a control signal for controlling the IC chip to the IC chip. The IC chip is placed in a shielding space such that the cut-off frequency of the shielding space is higher than the frequency of a carrier signal for radio communication.Type: GrantFiled: September 27, 1996Date of Patent: April 27, 1999Assignee: Kabushiki Kaisha ToshibaInventors: Kunio Yoshihara, Kouhei Morizuka, Mitsuo Konno, Yasuo Ashizawa, Junko Akagi, Yasuhiro Kuriyama, Motoyasu Morinaga, Eiji Takagi, Yasushi Shizuki, Yuji Iseki, Takeshi Hanawa, Takeshi Miyagi
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Patent number: 5818113Abstract: A semiconductor device wherein a sealing resin is filled in a space between an interconnecting wiring board and a semiconductor chip after the semiconductor chip is flip chip-mounted on the wiring board in which at least a non-planar region consisting of a through hole, a concave portion or a convex portion, or a region exhibiting poor wettability to the sealing resin is formed on the surface of the wiring board or the semiconductor chip so as to provide a void in the sealed resin filled between the wiring board and the semiconductor chip for the purpose of minimizing any bad influence from the sealing resin on the interconnecting wirings or elements formed on the semiconductor chip.Type: GrantFiled: September 12, 1996Date of Patent: October 6, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Yuji Iseki, Yasushi Shizuki, Hiroshi Yamada, Takashi Togasaki, Kunio Yoshihara
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Patent number: 5764119Abstract: A wiring board for high-frequency signals, which comprises, a substrate, a dielectric layer formed on the substrate and provided on its surface with a U-shaped groove having an arcuate bottom for forming a wiring therein, and a signal wiring formed in the U-shaped groove, which is featured in that an upper end portion of the signal wiring is protruded out of the surface of the dielectric layer. A distance (H) from a protruded top surface of the signal wiring to a bottom of the U-shaped groove and a width (W) of the U-shaped groove preferably meet a relationship of 2<(W/H)<50, and the height of the portion of signal wiring which is protruded out of the surface of the dielectric layer is preferably in the range of 10 nm to 10 .mu.m.Type: GrantFiled: October 3, 1996Date of Patent: June 9, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Takeshi Miyagi, Yuji Iseki, Yasushi Shizuki, Kunio Yoshihara, Masayuki Saito, Kazuhito Higuchi, Takeshi Hanawa, Eiji Takagi