Abstract: A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 ?m and the center-line average roughness Ra of the surface is no more than 0.1 ?m. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.

Abstract: A collective substrate has through-holes. The through-holes each have an interior surface including taper surfaces which are tapered as having an opening size progressively decreasing from a main surface and an external connection surface toward a minimum size hole portion. A semiconductor element mount includes an insulative member cut out of the collective substrate. An imaging device includes an imaging element mounted in a region surrounded by a frame which is bonded to the main surface of the insulative member and closed by a cover. A light emitting diode component includes a light emitting element mounted on the main surface of the insulative member with the minimum size hole portion of the through-hole being filled with an electrically conductive material, the light emitting element being sealed with a fluorescent material and/or a protective resin.

Abstract: A collective substrate (1) is produced by firing a ceramic green sheet and forming through-holes (11) in the resulting substrate. The through-holes (11) each have an interior surface including taper surfaces (11b, 11c) which are tapered as having an opening size progressively decreasing from a main surface (21) and an external connection surface (22) toward a minimum size hole portion (11a). The taper surfaces (11b, 11c) respectively form obtuse angles ?1, ?2 with the main surface (21) and the external connection surface (22). A semiconductor element mount (BL) includes an insulative member (2) cut out of the collective substrate (1). An imaging device (PE2) includes an imaging element (PE1) mounted in a region surrounded by a frame (4) which is bonded to the main surface (21) of the insulative member (2) and closed by a cover (FL).

Abstract: Provided is an aluminum nitride sintered body having a larger area and a smaller thickness as compared to the conventional art, wherein the aluminum nitride sintered body has flatness with controlled warpage and/or waviness height. Methods of producing such sintered body, and further a metallized substrate and a heater using such sintered body are also provided. An aluminum nitride substrate 1 has a maximum length of 320 mm or more, a thickness of more than 0 mm and 2 mm or less, a warpage of 0 ?m/mm or more and less than 2 ?m/mm, and a local waviness height of 0 ?m or more and 100 ?m or less.

Abstract: The object of the present invention is to provide a light-emitting element mounting member and a semiconductor device using the same that is easy to process and that allows adequate heat dissipation. A light-emitting element mounting member 200 includes: a substrate 2 including an element mounting surface 2a mounting a semiconductor light-emitting element 1 and first and second conductive regions 21, 22 disposed on the element mounting surface 2a and connected to the semiconductor light-emitting element 1; a reflective member 6 including a reflective surface 6a defining an internal space 6b for housing the semiconductor light-emitting element 1 and containing a metal disposed on the element mounting surface 1a; and a metal layer 13 disposed on the reflective surface 6a. The reflective surface 6a is sloped relative to the element mounting surface 2a so that a diameter of the internal space 6b is greater away from the element mounting surface 2a.

Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove.

Abstract: A semiconductor-light-emitting-device-mounting member BL comprises (a) a highly heat-dissipative member 1 having a main surface 10 on which connecting-use electrode layers 41 and 42 are provided to form a device-mounting area 10a and (b) a frame-shaped member 2 placed on the main surface 10 so as to surround the device-mounting area 10a. The device-mounting area 10a has an area that is 1.05 to 4 times the area of a semiconductor light-emitting device LE1. A light-emitting-diode-constituting member LE2 mounts a semiconductor light-emitting device LE1 on the device-mounting area 10a of the semiconductor-light-emitting-device-mounting member BL and has a fluorescent body and/or a protective resin LR filling the inside space of the frame-shaped member 2. A light-emitting diode LE3 mounts the light-emitting-diode-constituting member LE2 on a package 7.

Abstract: A collective substrate has through-holes. The through-holes each have an interior surface including taper surfaces which are tapered as having an opening size progressively decreasing from a main surface and an external connection surface toward a minimum size hole portion. A semiconductor element mount includes an insulative member cut out of the collective substrate. An imaging device includes an imaging element mounted in a region surrounded by a frame which is bonded to the main surface of the insulative member and closed by a cover. A light emitting diode component includes a light emitting element mounted on the main surface of the insulative member with the minimum size hole portion of the through-hole being filled with an electrically conductive material, the light emitting element being sealed with a fluorescent material and/or a protective resin.

Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove.

Abstract: A collective substrate (1) is produced by firing a ceramic green sheet and forming through-holes (11) in the resulting substrate. The through-holes (11) each have an interior surface including taper surfaces (11b, 11c) which are tapered as having an opening size progressively decreasing from a main surface (21) and an external connection surface (22) toward a minimum size hole portion (11a). The taper surfaces (11b, 11c) respectively form obtuse angles ?1, ?2 with the main surface (21) and the external connection surface (22). A semiconductor element mount (BL) includes an insulative member (2) cut out of the collective substrate (1). An imaging device (PE2) includes an imaging element (PE1) mounted in a region surrounded by a frame (4) which is bonded to the main surface (21) of the insulative member (2) and closed by a cover (FL).

Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove.

Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove.

Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1a and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u.

Abstract: A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submount 3 comprises (a) a substrate 4; and (b) a solder layer 8 formed on the top surface 4f of the substrate 4. The solder layer 8 before melting has a surface roughness, Ra, of at most 0.18 ?m. It is more desirable that the solder layer 8 before melting have a surface roughness, Ra, of at most 0.15 ?m, yet more desirably at most 0.10 ?m. A semiconductor unit 1 comprises the submount 3 and a laser diode 2 mounted on the solder layer 8 of the submount 3.

Abstract: A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 ?m and the center-line average roughness Ra of the surface is no more than 0.1 ?m. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.

Abstract: The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submount 3 is equipped with a substrate 3 and a solder layer 8 formed on a primary surface 4f of the substrate 4. The density of the solder layer 8 is at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer 8. The solder layer 8 contains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layer 8 before it is melted is formed on the substrate 4 and includes an Ag film 8b and an Sn film 8a formed on the Ag film 8b. The submount 3 further includes an Au film 6 formed between the substrate 4 and the solder layer 8.

Abstract: A semiconductor-light-emitting-device-mounting member BL comprises (a) a highly heat-dissipative member 1 having a main surface 10 on which connecting-use electrode layers 41 and 42 are provided to form a device-mounting area 10a and (b) a frame-shaped member 2 placed on the main surface 10 so as to surround the device-mounting area 10a. The device-mounting area 10a has an area that is 1.05 to 4 times the area of a semiconductor light-emitting device LE1. A light-emitting-diode-constituting member LE2 mounts a semiconductor light-emitting device LE1 on the device-mounting area 10a of the semiconductor-light-emitting-device-mounting member BL and has a fluorescent body and/or a protective resin LR filling the inside space of the frame-shaped member 2. A light-emitting diode LE3 mounts the light-emitting-diode-constituting member LE2 on a package 7.

Abstract: The object of the present invention is to provide a light-emitting element mounting member and a semiconductor device using the same that is easy to process and that allows adequate heat dissipation. A light-emitting element mounting member 200 includes: a substrate 2 including an element mounting surface 2a mounting a semiconductor light-emitting element 1 and first and second conductive regions 21, 22 disposed on the element mounting surface 2a and connected to the semiconductor light-emitting element 1; a reflective member 6 including a reflective surface 6a defining an internal space 6b for housing the semiconductor light-emitting element 1 and containing a metal disposed on the element mounting surface 1a; and a metal layer 13 disposed on the reflective surface 6a. The reflective surface 6a is sloped relative to the element mounting surface 2a so that a diameter of the internal space 6b is greater away from the element mounting surface 2a.

Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1a and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u.

Abstract: A submount can mount on it a semiconductor light-emitting device with high bonding strength, and a semiconductor unit incorporates the submount. The submount comprises (a) a submount substrate, (b) a solder layer formed at the top surface of the submount substrate, and (c) a solder intimate-contact layer that is formed between the submount substrate and the solder layer and that has a structure in which a transition element layer consisting mainly of at least one type of transition element and a precious metal layer consisting mainly of at least one type of precious metal are piled up. In the above structure, the transition element layer is formed at the submount-substrate side. The semiconductor unit is provided with a semiconductor light-emitting device mounted on the solder layer of the submount.