Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: The present invention discloses a capsule endoscope image display controller (26) including: an image-to-image similarity calculating unit (36) that calculates, for each image included in an image sequence captured by a capsule endoscope which moves within the digestive organs, a similarity between the image and its temporally consecutive image; an amount-of-movement calculating unit (47) that calculates, for each image included in the image sequence, an amount of movement of a feature area included in the image; a video state classifying unit (41) that classifies, for each image included in the image sequence, a video state of the image into one of the following states, based on the video state, the similarity, and the amount of movement of the image: (a) “stationary state” indicating that the capsule endoscope is stationary, (b) “digestive organs deformation state” indicating that the digestive organs are deformed, and (c) “capsule moving state” indicating that the capsule endoscope is moving, based on the

Abstract: An endoscope that is free from a dead area and capable of preventing the physician from overlooking any nidus is an endoscope for taking the inside of digestive organs, and the endoscope is provided with an omnidirectional camera (32), a light (34), a forceps (36) and a rinse water injection port (38) at the tip (24). The omnidirectional camera (32) is a device for taking the inside of digestive organs, and is able to take 360-degree images of its surroundings. A probe-type endoscope (20) is provided with a receiver (26) composed of orthogonal coils, and the receiver (26) is used for estimating the position and attitude of the probe-type endoscope (20). An image taken by the omnidirectional camera (32) is presented on a display unit (28) of an image processing device (22) connected to the probe-type endoscope (20).

Abstract: In an anodization apparatus and an anodization method for electrochemically treating a target substrate by irradiating the target substrate with light, treatment of a large target substrate can be made possible with smaller constituent elements. The electrical contact with the target substrate by a contact member is realized by a plurality of contact members or by the movement of a contact member to change the electrical contact position. The target substrate is manufactured in advance so as to have such a structure that portions thereof to be in contact with the plural contact members are connected to portions of a conductive layer on a treatment part thereof respectively.

Abstract: An anodic oxidation apparatus and an anodic oxidation method are provided that enable uniform photoirradiation of a treatment part of a target substrate, thereby realizing enhancement in uniformity of anodic oxidation in the surface of the target substrate. The anodic oxidation apparatus includes: a lamp that emits light; a target substrate holder provided at a position reached by the emitted light and capable of holding the target substrate; a cathode electrode that is provided on the way of the emitted light to reach the target substrate and that has an opening portion to allow light to pass therethrough and has a conductor section not transmitting light; and a vibrating mechanism to periodically vibrate a spatial position of one of the cathode electrode, the lamp, and the target substrate holder.

Abstract: Provided is a wide field of view head mounted display device capable of presenting 120 degree field of view per one eye and 180 or more by both eyes horizontally while keeping resolution at least to the same extent of the conventional art. The wide field of view head mounted display device includes: a LCD 1 for displaying an image; a lens 2 for projecting an image displayed on the LCD 1; and a catoptric system with a concave mirror 4 and a convex mirror 3. The LCD 1 and the lens 2, the concave mirror 4 and convex mirror 3 are positioned in a relative relationship to observe by an observing pupil 5 at a predetermined position a virtual image of a beam of reflected light as an incident light on the concave mirror 4 when the light of displayed image on the LCD 1 is projected to the convex mirror 3 through the lens 2 and a reflected light of the projected light at the convex mirror 3 arrives as the incident light at the concave mirror 4.

Abstract: A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopp

Abstract: A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopp

Abstract: In an anodic oxidation apparatus and an anodic oxidation method and a panel for a display device manufactured by them, a large target substrate is treated by a smaller component.

Abstract: In an anodization apparatus and an anodization method for electrochemically treating a target substrate by irradiating the target substrate with light, treatment of a large target substrate can be made possible with smaller constituent elements. The electrical contact with the target substrate by a contact member is realized by a plurality of contact members or by the movement of a contact member to change the electrical contact position. The target substrate is manufactured in advance so as to have such a structure that portions thereof to be in contact with the plural contact members are connected to portions of a conductive layer on a treatment part thereof respectively.

Abstract: An anodic oxidation apparatus and an anodic oxidation method are provided that enable uniform photoirradiation of a treatment part of a target substrate, thereby realizing enhancement in uniformity of anodic oxidation in the surface of the target substrate; The anodic oxidation apparatus includes: a lamp that emits light; a target substrate holder provided at a position reached by the emitted light and capable of holding the target substrate; a cathode electrode that is provided on the way of the emitted light to reach the target substrate and that has an opening portion to allow light to pass therethrough and has a conductor section not transmitting light; and a vibrating mechanism to periodically vibrate a spatial position of one of the cathode electrode, the lamp, and the target substrate holder.

Abstract: Provided is a wide field of view head mounted display device capable of presenting 120 degree field of view per one eye and 180 or more by both eyes horizontally while keeping resolution at least to the same extent of the conventional art. The wide field of view head mounted display device includes: a LCD 1 for displaying an image; a lens 2 for projecting an image displayed on the LCD 1; and a catoptric system with a concave mirror 4 and a convex mirror 3. The LCD 1 and the lens 2, the concave mirror 4 and convex mirror 3 are positioned in a relative relationship to observe by an observing pupil 5 at a predetermined position a virtual image of a beam of reflected light as an incident light on the concave mirror 4 when the light of displayed image on the LCD 1 is projected to the convex mirror 3 through the lens 2 and a reflected light of the projected light at the convex mirror 3 arrives as the incident light at the concave mirror 4.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopp

Abstract: Liquid treatment units are disposed in multi-tiers surrounding a main-arm 35. Among liquid treatment units, plating units M1 through M4 are disposed on a lower tier side, and a unit for post-treatment process such as a cleaning unit 70 where a cleaner atmosphere is necessary is disposed on an upper tier side. Thereby, an improvement in an area efficiency and the formation and maintenance of a clean atmosphere can be simultaneously obtained.

Abstract: A thermal processing unit for a single substrate of the invention includes a processing chamber vessel whose inside can be made a predetermined atmosphere of a process gas, and an elevating shaft which can be moved up and down in the processing chamber vessel. A supporting body which can support a substrate is arranged on an upper end of the elevating shaft. The substrate supported by the supporting body is adapted to be heated by a heater. The supporting body has a circular supporting part which can support a substantially full surface of a peripheral area of the substrate, and a pushing-up member which can push up the substrate from on the supporting part for conveying the substrate. According to the invention, concentration of stress onto the substrate can be restrained, and a thermal process can be conducted uniformly within a surface of the substrate because heating from a peripheral area of the substrate may be restrained.

Abstract: A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part.