Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Abstract: An object of the invention is to provide a grid assembly which is easy to assemble and is high in assembly reproducibility, and an ion beam etching apparatus including it. A grid assembly is constructed of three grids each in the shape of a circular plate, which are stacked one on top of another. The grid assembly includes three fixing holes for fixing the three grids, and three positioning holes for positioning the three grids. In assembly, the three grids are stacked one on top of another on a first ring so that positioning pins provided on the first ring are inserted into the positioning holes. Then, a second ring is stacked on top of the three grids, and bolts are inserted into the fixing holes. Thus, positioning is performed by using the fixed positioning pins and thereafter the fixing can be performed, which facilitates the assembly.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.

Abstract: A sputtering apparatus includes a chamber, a substrate holder, first to fourth target holders, a shutter unit, and a gate valve through which the substrate is conveyed. The first to fourth target holders are arranged on vertices of a virtual rectangle having long sides and short sides and inscribed in a virtual circle centered on the axis, the first target holder and the second target holder are respectively arranged on two vertices defining one short side of the virtual rectangle, and a distance to the gate valve is shorter than distances from the third target holder and the fourth target holder to the gate valve.

Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.

Abstract: A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.

Abstract: A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.

Abstract: A processing apparatus for processing a substrate in a vacuum processing space in a chamber includes a shield arranged in the chamber, and a holding portion configured to hold the shield by a magnetic force. The holding portion has a holding surface on which a first magnet is arranged. The shield includes a second magnet configured to generate an attraction force with respect to the first magnet, and a receiving portion configured to receive a tool configured to move the shield with respect to the holding portion.

Abstract: An ion beam etching apparatus includes: a processing chamber connected to the plasma generation chamber including an internal space; a plasma generating unit configured to generate plasma in the internal space; an extracting unit configured to extract ions from the plasma, from the internal space to the processing chamber, the extracting unit including first, second and a third electrodes, each of which has a plurality of ion passage holes; a first ring member provided closer to the plasma generation chamber; a second ring member provided closer to the processing chamber; a fixing member having one end and another end, the fixing member penetrating the first, second and third electrodes, and having the one end connected to the first ring member and the other end connected to the second ring member; and a heating unit configured to heat the third electrode from outside of the plasma generation chamber.

Abstract: A processing apparatus includes a substrate holding portion, a shield arranged to surround a substrate, and a shield holding portion configured to hold the shield. The shield includes first magnets each having a magnetic pole of a first polarity facing the shield holding portion, and second magnets each having a magnetic pole of a second polarity facing the shield holding portion. The first magnets and the second magnets are arranged at positions symmetrical with respect to the center of the shield. The shield holding portion includes third magnets each having a magnetic pole of the first polarity facing the shield, and fourth magnets each having a magnetic pole of the second polarity facing the shield.