Abstract: A coin-type secondary battery includes a positive electrode, a negative electrode, an electrolyte layer, an outer case, and a conductive elastic member. The elastic member is arranged, while being compressed in the up-down direction, between one of the positive electrode and the negative electrode and a flat plate portion of the outer case. The elastic member provides a direct or indirect electrical connection between the one electrode and the flat plate portion. The elastic member includes a plurality of projections projecting in the up-down direction. The projections include a first projection and a second projection different in yield margin from the first projection, the yield margin being a difference between compressive stress and yield stress acting in the up-down direction.

Abstract: Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.

Abstract: The porous plate-shaped filler aggregate includes a plurality of the porous plate-shaped fillers. The porous plate-shaped fillers have a uniform plate shape with an aspect ratio of 3 or more, a minimum length of 0.1 to 50 ?m, a porosity of 20 to 99%, and the deviation of the maximum length among a plurality of the porous plate-shaped fillers, which is obtained by the following formula, is 10% or less. Deviation of the maximum length (%)=standard deviation of the maximum length/average value of the maximum length×100 (Here, ‘maximum length’ is the longest length when the porous plate-shaped fillers are held between a pair of parallel planes.

Abstract: Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.

Abstract: The porous plate-shaped filler aggregate includes a plurality of the porous plate-shaped fillers. The porous plate-shaped fillers have a uniform plate shape with an aspect ratio of 3 or more, a minimum length of 0.1 to 50 ?m, a porosity of 20 to 99%, and the deviation of the maximum length among a plurality of the porous plate-shaped fillers, which is obtained by the following formula, is 10% or less. Deviation of the maximum length (%)=standard deviation of the maximum length/average value of the maximum length×100 (Here, ‘maximum length’ is the longest length when the porous plate-shaped fillers are held between a pair of parallel planes.