Patents by Inventor Yasutaka HAMA
Yasutaka HAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240063000Abstract: A method of cleaning a plasma processing apparatus includes: disposing a first dummy substrate at a first position with respect to a stage inside a chamber and performing a first dry cleaning process inside the chamber; and disposing a second dummy substrate at a second position with respect to the stage inside the chamber and performing a second dry cleaning process inside the chamber, wherein each of a center of the first position and a center of the second position is located at a different position from a center of the stage in a plan view, and wherein the first position and the second position are different from each other in a plan view.Type: ApplicationFiled: October 31, 2023Publication date: February 22, 2024Inventors: Yasutaka HAMA, Nobuaki SHINDO
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Patent number: 11887824Abstract: A method of cleaning a plasma processing apparatus includes: disposing a first dummy substrate at a first position with respect to a stage inside a chamber and performing a first dry cleaning process inside the chamber; and disposing a second dummy substrate at a second position with respect to the stage inside the chamber and performing a second dry cleaning process inside the chamber, wherein each of a center of the first position and a center of the second position is located at a different position from a center of the stage in a plan view, and wherein the first position and the second position are different from each other in a plan view.Type: GrantFiled: July 27, 2021Date of Patent: January 30, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Yasutaka Hama, Nobuaki Shindo
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Patent number: 11881410Abstract: A substrate processing apparatus includes: a chamber; a substrate support disposed in the chamber; a plasma generator configured to form a plasma in the chamber; and a controller configured to perform a process including: placing a substrate on the substrate support, the substrate including a first film, a second film and a third film, the first film containing a silicon, the second film having a second aperture, the first film being disposed between the second film and the third film; cooling the substrate to ?30° C. or less; etching the first film through the second aperture with a plasma formed from a first process gas containing a fluorocarbon gas, to form a first aperture of a tapered shape in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture; and etching the third film through the first aperture.Type: GrantFiled: November 10, 2021Date of Patent: January 23, 2024Assignee: Tokyo Electron LimitedInventors: Yasutaka Hama, Motoki Noro, Shu Kino
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Patent number: 11705309Abstract: A temperature changing method includes changing a pressure of a gas supplied from a gas supply to a gap between the substrate and an electrostatic chuck from a first pressure to a second pressure being lower than the first pressure, changing a voltage applied to the electrostatic chuck from a first voltage to a second voltage being lower than the first voltage, changing a temperature of the electrostatic chuck from a first temperature to a second temperature, electrostatically attracting the substrate by the electrostatic chuck for a time in a state where the gas pressure is the second pressure and the voltage is the second voltage, changing the gas pressure from the second pressure to a third pressure being lower than the first pressure and higher than the second pressure, and changing the voltage from the second voltage to a third voltage being higher than the second voltage.Type: GrantFiled: December 4, 2020Date of Patent: July 18, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yasutaka Hama, Ryo Matsubara, Nobuaki Shindo
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Publication number: 20220068658Abstract: A substrate processing apparatus includes: a chamber; a substrate support disposed in the chamber; a plasma generator configured to form a plasma in the chamber; and a controller configured to perform a process including: placing a substrate on the substrate support, the substrate including a first film, a second film and a third film, the first film containing a silicon, the second film having a second aperture, the first film being disposed between the second film and the third film; cooling the substrate to ?30° C. or less; etching the first film through the second aperture with a plasma formed from a first process gas containing a fluorocarbon gas, to form a first aperture of a tapered shape in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture; and etching the third film through the first aperture.Type: ApplicationFiled: November 10, 2021Publication date: March 3, 2022Inventors: Yasutaka Hama, Motoki Noro, Shu Kino
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Publication number: 20220037133Abstract: A method of cleaning a plasma processing apparatus includes: disposing a first dummy substrate at a first position with respect to a stage inside a chamber and performing a first dry cleaning process inside the chamber; and disposing a second dummy substrate at a second position with respect to the stage inside the chamber and performing a second dry cleaning process inside the chamber, wherein each of a center of the first position and a center of the second position is located at a different position from a center of the stage in a plan view, and wherein the first position and the second position are different from each other in a plan view.Type: ApplicationFiled: July 27, 2021Publication date: February 3, 2022Inventors: Yasutaka HAMA, Nobuaki SHINDO
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Patent number: 11201063Abstract: A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to ?30° C. or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture.Type: GrantFiled: April 8, 2020Date of Patent: December 14, 2021Assignee: Tokyo Electron LimitedInventors: Yasutaka Hama, Motoki Noro, Shu Kino
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Publication number: 20210233793Abstract: A method of processing a substrate includes: (a) placing the substrate on an electrostatic chuck, and applying a direct current voltage to the electrostatic chuck to hold the substrate on the electrostatic chuck; (b) supplying a radio frequency power to an electrode to generate plasma of an inert gas; (c) stopping the application of the direct current voltage to the electrostatic chuck; and (d) gradually decreasing the radio frequency power supplied to the electrode to 0 W.Type: ApplicationFiled: January 22, 2021Publication date: July 29, 2021Inventors: Yasutaka HAMA, Nobuaki SHINDO, Shigeru YONEDA
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Publication number: 20210175049Abstract: A temperature changing method includes changing a pressure of a gas supplied from a gas supply to a gap between the substrate and an electrostatic chuck from a first pressure to a second pressure being lower than the first pressure, changing a voltage applied to the electrostatic chuck from a first voltage to a second voltage being lower than the first voltage, changing a temperature of the electrostatic chuck from a first temperature to a second temperature, electrostatically attracting the substrate by the electrostatic chuck for a time in a state where the gas pressure is the second pressure and the voltage is the second voltage, changing the gas pressure from the second pressure to a third pressure being lower than the first pressure and higher than the second pressure, and changing the voltage from the second voltage to a third voltage being higher than the second voltage.Type: ApplicationFiled: December 4, 2020Publication date: June 10, 2021Inventors: Yasutaka HAMA, Ryo MATSUBARA, Nobuaki SHINDO
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Patent number: 10998223Abstract: In a method for processing a target object, the target object includes a wiring layer having a wiring, a diffusion barrier film provided on the wiring layer, an insulating film provided on the diffusion barrier film, and a metal mask provided on the insulating film and having an opening, and the insulating film has a trench formed at a part of a portion exposed through the opening and a first via hole provided at a part of the trench. The method includes: a first step of forming a sacrificial film on the trench and a side surface of the first via hole of the target object; and a second step of forming a second via hole at a deeper portion than a bottom surface of the first via hole by etching the sacrificial film and the insulating film and removing the sacrificial film from the trench and the first via hole.Type: GrantFiled: July 31, 2018Date of Patent: May 4, 2021Assignee: Tokyo Electron LimitedInventors: Seiji Yokoyama, Yasutaka Hama
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Patent number: 10950458Abstract: An etching method is provided. The etching method is performed on a substrate having a first film to a third film. The third film is provided on an underlying region, the second film is provided on the third film, the first film is provided on the second film. The second film contains silicon and nitrogen. The first film to the third film are etched in sequence. Plasma of a processing gas containing fluorine and hydrogen is used in the etching of the first film to the third film. A temperature of the substrate is set to be equal to or less than 20° C. at least in the etching of the second film.Type: GrantFiled: January 3, 2019Date of Patent: March 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yasutaka Hama, Shinya Morikita, Kiyohito Ito
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Publication number: 20200328089Abstract: A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to ?30° C. or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture.Type: ApplicationFiled: April 8, 2020Publication date: October 15, 2020Inventors: Yasutaka HAMA, Motoki NORO, Shu KINO
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Publication number: 20190214269Abstract: An etching method is provided. The etching method is performed on a substrate having a first film to a third film. The third film is provided on an underlying region, the second film is provided on the third film, the first film is provided on the second film. The second film contains silicon and nitrogen. The first film to the third film are etched in sequence. Plasma of a processing gas containing fluorine and hydrogen is used in the etching of the first film to the third film. A temperature of the substrate is set to be equal to or less than 20° C. at least in the etching of the second film.Type: ApplicationFiled: January 3, 2019Publication date: July 11, 2019Inventors: Yasutaka Hama, Shinya Morikita, Kiyohito Ito
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Patent number: 10297496Abstract: In a method for processing a target object including a conductive layer and an insulating film formed on the conductive layer, the insulating film is etched by plasma treatment of a fluorine-containing gas to form an opening in the insulating film. A barrier film is formed to cover a surface of the insulating film and a surface of the conductive layer which is exposed through the opening formed in the insulating film. The target object having the barrier film is placed in an atmospheric environment, and the barrier film is removed from the target object by isotropically etching the barrier film. The target object is maintained in a depressurized environment from start of etching the insulating film to end of forming the barrier film. The barrier film is conformally formed on the surfaces of the insulating film and the conductive layer exposed through the opening formed in the insulating film.Type: GrantFiled: March 14, 2018Date of Patent: May 21, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yasutaka Hama, Seiji Yokoyama
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Publication number: 20190043753Abstract: In a method for processing a target object, the target object includes a wiring layer having a wiring, a diffusion barrier film provided on the wiring layer, an insulating film provided on the diffusion barrier film, and a metal mask provided on the insulating film and having an opening, and the insulating film has a trench formed at a part of a portion exposed through the opening and a first via hole provided at a part of the trench. The method includes: a first step of forming a sacrificial film on the trench and a side surface of the first via hole of the target object; and a second step of forming a second via hole at a deeper portion than a bottom surface of the first via hole by etching the sacrificial film and the insulating film and removing the sacrificial film from the trench and the first via hole.Type: ApplicationFiled: July 31, 2018Publication date: February 7, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Seiji YOKOYAMA, Yasutaka HAMA
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Publication number: 20180269101Abstract: In a method for processing a target object including a conductive layer and an insulating film formed on the conductive layer, the insulating film is etched by plasma treatment of a fluorine-containing gas to form an opening in the insulating film. A barrier film is formed to cover a surface of the insulating film and a surface of the conductive layer which is exposed through the opening formed in the insulating film. The target object having the barrier film is placed in an atmospheric environment, and the barrier film is removed from the target object by isotropically etching the barrier film. The target object is maintained in a depressurized environment from start of etching the insulating film to end of forming the barrier film. The barrier film is conformally formed on the surfaces of the insulating film and the conductive layer exposed through the opening formed in the insulating film.Type: ApplicationFiled: March 14, 2018Publication date: September 20, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Yasutaka HAMA, Seiji YOKOYAMA
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Publication number: 20170296690Abstract: To provide an ultraviolet sterilizing apparatus that is capable of efficiently performing ultraviolet sterilization on a large volume of gas or pressurized liquid in a short time, can be made compact, and can be stably and safely used for a long time.Type: ApplicationFiled: September 3, 2015Publication date: October 19, 2017Inventors: Shingo MATSUI, Yuriko HORII, Reo YAMAMOTO, Keiichiro HIRONAKA, Yasutaka HAMA