Patents by Inventor Yasutaka Hamaguchi
Yasutaka Hamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8698188Abstract: The object of the invention is to improve the visual inspection yield of a semiconductor light emitting device. To achieve the object, a semiconductor light emitting device includes a semiconductor layer, a pad electrode on the layer, and a protection film covering at least the layer. The device includes at least one stopper arranged on a peripheral part of the pad electrode surface away from the film. The stopper has a semicircular arc shape opening toward the center of the pad electrode. In electrical/optical property inspection, if sliding on the pad electrode, a probe needle can be guided into the concave surface of the semicircular arc shape. The stopper can reliably hold the needle. It is avoidable that the needle contacts the film. It is preferable that each of positive/negative electrodes have the pad electrode, and a pair of stoppers be arranged in positions on the electrodes facing each other.Type: GrantFiled: March 5, 2011Date of Patent: April 15, 2014Assignee: Nichia CorporationInventors: Yasutaka Hamaguchi, Yoshiki Inoue, Takahiko Sakamoto
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Patent number: 8674381Abstract: A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L?X?0.5L and 0.2L?Y?0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.Type: GrantFiled: January 3, 2011Date of Patent: March 18, 2014Assignee: Nichia CorporationInventors: Takahiko Sakamoto, Yasutaka Hamaguchi
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Publication number: 20120032225Abstract: The object of the invention is to improve the visual inspection yield of a semiconductor light emitting device. To achieve the object, a semiconductor light emitting device includes a semiconductor layer, a pad electrode on the layer, and a protection film covering at least the layer. The device includes at least one stopper arranged on a peripheral part of the pad electrode surface away from the film. The stopper has a semicircular arc shape opening toward the center of the pad electrode. In electrical/optical property inspection, if sliding on the pad electrode, a probe needle can be guided into the concave surface of the semicircular arc shape. The stopper can reliably hold the needle. It is avoidable that the needle contacts the film. It is preferable that each of positive/negative electrodes have the pad electrode, and a pair of stoppers be arranged in positions on the electrodes facing each other.Type: ApplicationFiled: March 5, 2011Publication date: February 9, 2012Inventors: Yasutaka Hamaguchi, Yoshiki Inoue, Takahiko Sakamoto
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Publication number: 20110095265Abstract: A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L?X?0.5L and 0.2L?Y?0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.Type: ApplicationFiled: January 3, 2011Publication date: April 28, 2011Applicant: NICHIA CORPORATIONInventors: Takahiko SAKAMOTO, Yasutaka Hamaguchi
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Patent number: 7884379Abstract: A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L?X?0.5L and 0.2L?Y?0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.Type: GrantFiled: May 29, 2007Date of Patent: February 8, 2011Assignee: Nichia CorporationInventors: Takahiko Sakamoto, Yasutaka Hamaguchi
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Patent number: 7791098Abstract: A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.Type: GrantFiled: March 19, 2008Date of Patent: September 7, 2010Assignee: Nichia CorporationInventors: Takahiko Sakamoto, Yasutaka Hamaguchi
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Publication number: 20080290365Abstract: A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.Type: ApplicationFiled: March 19, 2008Publication date: November 27, 2008Inventors: Takahiko Sakamoto, Yasutaka Hamaguchi
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Patent number: 7358544Abstract: A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.Type: GrantFiled: March 30, 2005Date of Patent: April 15, 2008Assignee: Nichia CorporationInventors: Takahiko Sakamoto, Yasutaka Hamaguchi
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Publication number: 20070272937Abstract: A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L?X?0.5L and 0.2L?Y?0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.Type: ApplicationFiled: May 29, 2007Publication date: November 29, 2007Applicant: NICHIA CORPORATIONInventors: Takahiko Sakamoto, Yasutaka Hamaguchi
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Publication number: 20060017061Abstract: A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.Type: ApplicationFiled: March 30, 2005Publication date: January 26, 2006Applicant: NICHIA CORPORATIONInventors: Takahiko Sakamoto, Yasutaka Hamaguchi