Abstract: A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.

Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1<n2 and n2>n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.

Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1<n2 and n2>n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.

Abstract: A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.

Abstract: A mask blank in which a phase shift film provided on a transparent substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer contains silicon and nitrogen and the oxygen-containing layer contains silicon and oxygen, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate, is 1.09 or less.

Abstract: A mask blank in which a phase shift film provided on a transparent substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer contains silicon and nitrogen and the oxygen-containing layer contains silicon and oxygen, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate, is 1.09 or less.

Abstract: A mask blank has a phase shift film of a structure in which a lower layer, an intermediate layer, and an upper layer are layered in this order. The lower layer is formed of a silicon-nitride-based material. The intermediate layer is formed of silicon-oxynitride-based material. The upper layer is formed of a silicon-oxide-based material. The nitrogen content of the lower layer is greater than those of the intermediate and the upper layers. The oxygen content of the upper layer is greater than those of the intermediate and the lower layers. The ratio of the film thickness of the intermediate layer with respect to the overall film thickness of the phase shift film is 0.15 or more, and the ratio of the film thickness of the upper layer with respect to the overall film thickness of the phase shift film is 0.10 or more.

Abstract: This mask blank is provided with a light blocking film on a light transmitting substrate. The light blocking film has an optical density of 2.5 or more with respect to ArF excimer laser exposure light, and has a structure that comprises three or more multilayer structures, each of which is composed of a high nitride layer and a low nitride layer. The high nitride layer and the low nitride layer are formed from a material that is composed of silicon and nitrogen or a material that contains one or more elements selected from among semimetal elements and non-metal elements in addition to silicon and nitrogen. The high nitride layer has a nitrogen content of 50 atom % or more, and has a thickness of 10 nm or more. The low nitride layer has a nitrogen content of less than 50 atom %, and has a thickness that is not less than twice the thickness of the high nitride layer.

Abstract: This mask blank is provided with a light blocking film on a light transmitting substrate. The light blocking film has an optical density of 2.5 or more with respect to ArF excimer laser exposure light, and has a structure that comprises three or more multilayer structures, each of which is composed of a high nitride layer and a low nitride layer. The high nitride layer and the low nitride layer are formed from a material that is composed of silicon and nitrogen or a material that contains one or more elements selected from among semimetal elements and non-metal elements in addition to silicon and nitrogen. The high nitride layer has a nitrogen content of 50 atom % or more, and has a thickness of 10 nm or more. The low nitride layer has a nitrogen content of less than 50 atom %, and has a thickness that is not less than twice the thickness of the high nitride layer.

Abstract: A mask blank for a phase shift mask having a phase shift film on a transparent substrate. The phase shift film generates a phase difference of 150 degrees or more and 200 degrees or less and transmits exposure light of an ArF excimer laser at a transmittance of 10% or more. The film has a low transmitting layer and a high transmitting layer, stacked alternately to form a total of six or more layers from a side of the transparent substrate. The low transmitting layer is made of a material containing silicon and nitrogen and having a nitrogen content of 50 atom % or more. The high transmitting layer is made of a material containing silicon and oxygen and having an oxygen content of 50 atom % or more. The low transmitting layer has a thickness greater than that of the high transmitting layer, which has a thickness of 4 nm or less.