Abstract: Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and reduce post-polishing surface defects. The chemical mechanical polishing composition contains (A) silica particles having the functional group represented by general formula (1), and (B) at least one selected from the group consisting of a carboxylic acid having an unsaturated bond and a salt thereof. (1): —COO-M+ (M+ represents a monovalent cation.

Abstract: Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.

Abstract: A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×101 to 1.5×103 per mL.

Abstract: A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK/MNa=1×10?1 to 1×104.

Abstract: A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK/MNa=1×10?1 to 1×104.

Abstract: A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK/MNa=1×10?1 to 1×104.

Abstract: A treatment composition for chemical mechanical polishing includes: (A) a water-soluble amine; (B) a water-soluble polymer having an aromatic hydrocarbon group-containing repeating unit; and an aqueous medium. The treatment composition for chemical mechanical polishing preferably further includes (C) an organic acid having an aromatic hydrocarbon group and has a pH of 9 or more.

Abstract: A cleaning composition includes (A) at least one compound selected from the group consisting of a fatty acid that includes a hydrocarbon group having 8 to 20 carbon atoms, a phosphonic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, a sulfuric acid ester that includes a hydrocarbon group having 3 to 20 carbon atoms, an alkenylsuccinic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, and salts thereof, (B) an organic acid, (C) a water-soluble amine, (D) a water-soluble polymer, and an aqueous medium, the cleaning composition having a pH of 9 or more.

Abstract: A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×101 to 1.5×103 per mL.

Abstract: A semiconductor treatment composition includes potassium and sodium, and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK/MNa=5×103 to 1×105.

Abstract: A chemical mechanical polishing aqueous dispersion includes colloidal silica (A), an anionic water-soluble polymer (B), and at least one type of an alkanolamine salt (C) selected from the group consisting of an alkyl sulfate and an alkyl ether sulfate, the chemical mechanical polishing aqueous dispersion having a pH of 1 to 4.

Abstract: A cleaning composition includes (A) at least one compound selected from the group consisting of a fatty acid that includes a hydrocarbon group having 8 to 20 carbon atoms, a phosphonic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, a sulfuric acid ester that includes a hydrocarbon group having 3 to 20 carbon atoms, an alkenylsuccinic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, and salts thereof, (B) an organic acid, (C) a water-soluble amine, (D) a water-soluble polymer, and an aqueous medium, the cleaning composition having a pH of 9 or more.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B) a compound that includes two or more carboxyl groups, a particle size (Db) of the silica particles (A) that is detected with a highest detection frequency (Fb) being larger than 35 nm and 90 nm or less, and a ratio (Fa/Fb) of a detection frequency (Fa) that corresponds to a particle size (Da) of larger than 90 nm and 100 nm or less to the detection frequency (Fb) being 0.5 or less when measuring a particle size distribution of the chemical mechanical polishing aqueous dispersion by a dynamic light scattering method.