Abstract: A light receiving element includes a p-type semiconductor layer, an n-type semiconductor layer, and a first and a second superlattice semiconductor layers, and the first and the second superlattice semiconductor layers each have a superlattice structure in which a barrier layer and a quantum dot layer are alternately and repeatedly stacked. A band structure of the superlattice structure of the first superlattice semiconductor layer is a type I structure, and that of the second superlattice semiconductor layer is a type II structure. The superlattice structures of the first and the second superlattice semiconductor layers each form a superlattice miniband, and a conduction band first superlattice miniband of the superlattice structure of the second superlattice semiconductor layer is lower in lower and energy than a conduction band first superlattice miniband of the superlattice structure of the first superlattice semiconductor layer.

Abstract: A light receiving element includes a p-type semiconductor layer, an n-type semiconductor layer, and a first and a second superlattice semiconductor layers, and the first and the second superlattice semiconductor layers each have a superlattice structure in which a barrier layer and a quantum dot layer are alternately and repeatedly stacked. A band structure of the superlattice structure of the first superlattice semiconductor layer is a type I structure, and that of the second superlattice semiconductor layer is a type II structure. The superlattice structures of the first and the second superlattice semiconductor layers each form a superlattice miniband, and a conduction band first superlattice miniband of the superlattice structure of the second superlattice semiconductor layer is lower in lower and energy than a conduction band first superlattice miniband of the superlattice structure of the first superlattice semiconductor layer.

Abstract: A phosphor nanoparticle includes a nanoparticle core composed of a compound semiconductor, a shell layer that covers the nanoparticle core, and a modifying organic compound bound to the outer surface of the shell layer. The modifying organic compound exhibits absorption in at least part of a wavelength range of 300 nm or more and 400 nm or less.

Abstract: An organic thin-film transistor of the present invention has a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer provided above a substrate, and further has a thiol compound layer composed of a benzenethiol compound and provided on a surface of the source electrode and a thiol compound layer composed of a benzenethiol compound and provided on a surface of the drain electrode. This makes it possible to provide an organic thin-film transistor whose threshold voltage can be selectively controlled without greatly affecting a current characteristic other than the threshold voltage.

Abstract: A solar cell comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a stacked structure in which quantum layers and barrier layers are stacked alternately and repeatedly, wherein the stacked structure is formed whereby a miniband is formed by a quantum level of the quantum layers on the side of a conduction band, wherein an energy level at a bottom of the miniband is lower than an energy level at a bottom of the conduction band of the barrier layers, and an energy level at a top of the miniband is higher than an energy level, which is lower than the energy level at the bottom of the conduction band of the barrier layers by an amount twice as much as thermal energy at room temperature.

Abstract: An organic transistor (1) includes: an injection improvement layer (40) between a source electrode (14) and an organic semiconductor layer (16); and an extraction improvement layer (50) between a drain electrode (15) and the organic semiconductor layer (16). An electric dipole moment of a material or molecules of the extraction improvement layer (50) has an absolute value lager than that of the injection improvement layer (40). Accordingly, all carriers in the organic semiconductor, which are injected from the source electrode during operation of the transistor, can be drawn out (extracted) into the drain electrode. This reduce contact resistances. Therefore, provided are the organic transistor that reduces a contact resistance between the organic semiconductor layer and the source electrode and a contact resistance between the organic semiconductor layer and the drain electrode and attains to demonstrate stable operation, and a method for fabricating the organic transistor.

Abstract: A semiconductor device (1a) which is constituted by organic semiconductors with excellent transistor characteristics and includes: a p-type organic transistor (P1) having a gate electrode (12), a source electrode (14), a drain electrode (15), and a p-type organic semiconductor layer (16); an n-type organic transistor (N1) electrically connected with the p-type organic transistor (P1) and having a gate electrode (22), a source electrode (24), a drain electrode (25), and an n-type organic semiconductor layer (26); first layers for enhancing electric charge transfer, one of the first layers being provided between the source electrode (14) and the organic semiconductor layer (16), the other of the first layers being provided between the drain electrode (25) and the organic semiconductor (26); and second layers for enhancing electric charge transfer and made from a different material from that of the first layers, one of the second layers being provided between the drain electrode (15) and the organic semiconducto

Abstract: An organic thin-film transistor (100) includes, on a substrate (1), a gate electrode (2), a gate insulating layer (3), a source electrode (4), and a drain electrode (5). Part of surface of the source electrode (4) is covered by a first organic molecular layer (6a). Part of surface of the drain electrode (5) is covered by a second organic molecular layer (6b). An organic semiconductor layer (7) is formed so as to cover the organic molecular layer (6) (first and second organic molecular layers (6a, 6b)), the source electrode (4), and the drain electrode (5), and get into a channel section (20) which is a gap between the electrodes. Since the organic thin-film transistor (100) has the organic molecular layer (6) covering at least part of surface of each of the source and drain electrodes (4, 5), hole-electron injection efficiency is increased. This makes it possible to obtain large current.

Abstract: An organic transistor comprising: at least a gate electrode and a gate insulating layer formed on the gate electrode, the gate insulating layer including, on a surface of the gate electrode, a stacked molecular film composed of a first organic molecular layer binding in a direction substantially perpendicular to the surface of the gate electrode through a first covalent bond and a second organic molecular layer binding to an unreacted end of the first organic molecular layer through a second covalent bond, wherein the second covalent bond and another second covalent bond adjacent to each other form a hydrogen bond in a direction of a surface perpendicular to a major axis direction of the stacked molecule.

Abstract: A solar cell of the present invention comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers comprising quantum dots are stacked alternately and repeatedly, and is formed so that the bandgaps of the quantum dots are gradually widened with increasing distance from a side of the p-type semiconductor layer and decreasing distance to a side of the n-type semiconductor layer.

Abstract: An organic transistor comprising: at least a gate electrode and a gate insulating layer formed on the gate electrode, the gate insulating layer including, on a surface of the gate electrode, a stacked molecular film composed of a first organic molecular layer binding in a direction substantially perpendicular to the surface of the gate electrode through a first covalent bond and a second organic molecular layer binding to an unreacted end of the first organic molecular layer through a second covalent bond, wherein the second covalent bond and another second covalent bond adjacent to each other form a hydrogen bond in a direction of a surface perpendicular to a major axis direction of the stacked molecule.

Abstract: An organic thin-film transistor of the present invention has a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer provided above a substrate, and further has a thiol compound layer composed of a benzenethiol compound and provided on a surface of the source electrode and a thiol compound layer composed of a benzenethiol compound and provided on a surface of the drain electrode. This makes it possible to provide an organic thin-film transistor whose threshold voltage can be selectively controlled without greatly affecting a current characteristic other than the threshold voltage.