Patents by Inventor Yasutaka Morikawa
Yasutaka Morikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10634990Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the as pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: GrantFiled: July 11, 2019Date of Patent: April 28, 2020Assignee: DAI NIPPON PRINTING CO., LTD.Inventors: Takaharu Nagai, Hiroshi Mohri, Yasutaka Morikawa, Katsuya Hayano
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Publication number: 20190332006Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the as pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: ApplicationFiled: July 11, 2019Publication date: October 31, 2019Applicant: DAI NIPPON PRINTING CO., LTD.Inventors: Takaharu NAGAI, Hiroshi MOHRI, Yasutaka MORIKAWA, Katsuya HAYANO
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Patent number: 10394118Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: GrantFiled: July 12, 2018Date of Patent: August 27, 2019Assignee: DAI NIPPON PRINTING CO., LTD.Inventors: Takaharu Nagai, Hiroshi Mohri, Yasutaka Morikawa, Katsuya Hayano
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Publication number: 20180321582Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: ApplicationFiled: July 12, 2018Publication date: November 8, 2018Inventors: Takaharu NAGAI, Hiroshi MOHRI, Yasutaka MORIKAWA, Katsuya HAYANO
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Patent number: 10048580Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: GrantFiled: November 2, 2016Date of Patent: August 14, 2018Assignee: DAI NIPPON PRINTING CO., LTD.Inventors: Takaharu Nagai, Hiroshi Mohri, Yasutaka Morikawa, Katsuya Hayano
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Publication number: 20170075213Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: ApplicationFiled: November 2, 2016Publication date: March 16, 2017Inventors: Takaharu NAGAI, Hiroshi MOHRI, Yasutaka MORIKAWA, Katsuya HAYANO
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Patent number: 9519211Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: GrantFiled: January 28, 2015Date of Patent: December 13, 2016Assignee: DAI NIPPON PRINTING CO., LTD.Inventors: Takaharu Nagai, Hiroshi Mohri, Yasutaka Morikawa, Katsuya Hayano
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Publication number: 20150140480Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: ApplicationFiled: January 28, 2015Publication date: May 21, 2015Inventors: Takaharu NAGAI, Hiroshi MOHRI, Yasutaka MORIKAWA, Katsuya HAYANO
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Patent number: 8974987Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: GrantFiled: February 4, 2010Date of Patent: March 10, 2015Assignee: Dai Nippon Printing Co., Ltd.Inventors: Takaharu Nagai, Hideyoshi Takamizawa, Hiroshi Mohri, Yasutaka Morikawa, Katsuya Hayano
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Publication number: 20110294045Abstract: The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern.Type: ApplicationFiled: February 4, 2010Publication date: December 1, 2011Applicant: DAI NIPPON PRINTING CO., LTD.Inventors: Takaharu Nagai, Hideyoshi Takamizawa, Hiroshi Mohri, Yasutaka Morikawa, Katsuya Hayano
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Patent number: 7968255Abstract: A photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens. The photomask includes a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further, given that a thickness of the light shielding film or semi-transparent film is “t” nm, a refractive index is “n”, an extinction factor is “k”, and a bias of a space part of the mask pattern is “d” nm, when “t”, “d”, “n” and “k” are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.Type: GrantFiled: July 19, 2007Date of Patent: June 28, 2011Assignee: Dai Nippon Printing Co., Ltd.Inventors: Yasuhisa Kitahata, Yasutaka Morikawa, Takashi Adachi, Nobuhito Toyama, Yuichi Inazuki, Takanori Sutou
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Publication number: 20090311612Abstract: A photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens. The photomask includes a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further, given that a thickness of the light shielding film or semi-transparent film is “t” nm, a refractive index is “n”, an extinction factor is “k”, and a bias of a space part of the mask pattern is “d” nm, when “t”, “d”, “n” and “k” are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.Type: ApplicationFiled: July 19, 2007Publication date: December 17, 2009Inventors: Yasuhisa Kitahata, Yasutaka Morikawa, Takashi Adachi, Nobuhito Toyama, Yuichi Inazuki, Takanori Sutou
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Patent number: 7287240Abstract: A planar pattern (11), having a plurality of apertures of the same size (Wx×Wy), is determined by a two-dimensional layout determination tool (10), and a three-dimensional structure, having a depth d and an undercut amount Uc for making the phase of the transmitted light be shifted by 180 degrees with every even-numbered aperture, is determined by a three-dimensional structure determination tool (20). Simulation of transmitted light is executed for a structural body having the planar pattern (11) and the three-dimensional structure (21) by a three-dimensional simulator (30) to determine the light intensity deviation D of transmitted light for an odd-numbered aperture without a trench and an even-numbered aperture with a trench. At a two-dimensional simulator (40), simulations using a two-dimensional model prepared based on this deviation D are performed to determine a correction amount ? for making the deviation D zero and obtain a new planar pattern (12).Type: GrantFiled: December 10, 2002Date of Patent: October 23, 2007Assignee: Dai Nippon Printing Co., Ltd.Inventors: Nobuhito Toyama, Yasutaka Morikawa, Kei Mesuda
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Publication number: 20060141365Abstract: A planar pattern (11), having a plurality of apertures of the same size (Wx×Wy), is determined by a two-dimensional layout determination tool (10), and a three-dimensional structure, having a depth d and an undercut amount Uc for making the phase of the transmitted light be shifted by 180 degrees with every even-numbered aperture, is determined by a three-dimensional structure determination tool (20). Simulation of transmitted light is executed for a structural body having the planar pattern (11) and the three-dimensional structure (21) by a three-dimensional simulator (30) to determine the light intensity deviation D of transmitted light for an odd-numbered aperture without a trench and an even-numbered aperture with a trench. At a two-dimensional simulator (40), simulations using a two-dimensional model prepared based on this deviation D are performed to determine a correction amount ? for making the deviation D zero and obtain a new planar pattern (12).Type: ApplicationFiled: December 10, 2002Publication date: June 29, 2006Inventors: Nobuhito Toyama, Yasutaka Morikawa, Kei Mesuda
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Patent number: 6740455Abstract: A photomask is produced which enables the simplification of the steps of lithography. A photomask is provided with shielding patterns made of shielding metallic thin film on a transparent substrate, wherein the photomask further comprises translucent patterns mainly including tantalum of materials selected from tantalum silicide, tantalum oxide, tantalum nitride or mixture thereof.Type: GrantFiled: December 21, 2001Date of Patent: May 25, 2004Assignee: Dainippon Printing Co., Ltd.Inventors: Kenji Noguchi, Toshiaki Motonaga, Hiro-o Nakagawa, Yasutaka Morikawa, Toshifumi Yokoyama, Takashi Tominaga, Yoshinori Kinase, Junji Fujikawa, Yoichi Takahashi
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Publication number: 20020119379Abstract: A photomask is produced which enables the simplification of the steps of lithography. A photomask is provided with shielding patterns made of shielding metallic thin film on a transparent substrate, wherein the photomask further comprises translucent patterns mainly including tantalum of materials selected from tantalum silicide, tantalum oxide, tantalum nitride or mixture thereof.Type: ApplicationFiled: December 21, 2001Publication date: August 29, 2002Inventors: Kenji Noguchi, Toshiaki Motonaga, Hiro-o Nakagawa, Yasutaka Morikawa, Toshifumi Yokoyama, Takashi Tominaga, Yoshinori Kinase, Junji Fujikawa, Yoichi Takahashi