Patents by Inventor Yasutaka NAKAZAWA
Yasutaka NAKAZAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9356098Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.Type: GrantFiled: December 18, 2014Date of Patent: May 31, 2016Assignee: Semiconductor Energy Laboratory Co., LTD.Inventors: Shunpei Yamazaki, Junichi Koezuka, Masami Jintyou, Yukinori Shima, Takashi Hamochi, Yasutaka Nakazawa
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Publication number: 20160141397Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.Type: ApplicationFiled: January 21, 2016Publication date: May 19, 2016Inventors: Shunpei YAMAZAKI, Yasutaka NAKAZAWA, Masami JINTYOU, Junichi KOEZUKA, Kenichi OKAZAKI, Takuya HIROHASHI, Shunsuke ADACHI
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Patent number: 9276128Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first conductive film over a substrate; forming an insulating film over the first conductive film; forming an oxide semiconductor film over the insulating film to overlap with the first conductive film; forming a second conductive film including a metal film containing molybdenum as its main component and a metal film containing copper as its main component over the oxide semiconductor film; and etching the second conductive film by an etchant. At the time of etching the second conductive film by the etchant, the oxide semiconductor film is used as an etching stopper film. In addition, the etchant which can be used for a transistor including the oxide semiconductor film is provided.Type: GrantFiled: October 20, 2014Date of Patent: March 1, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasutaka Nakazawa, Shunsuke Koshioka, Takayuki Cho, Takahiro Sato
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Publication number: 20160035567Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.Type: ApplicationFiled: October 8, 2015Publication date: February 4, 2016Inventors: Takahiro SATO, Yasutaka NAKAZAWA, Takayuki CHO, Shunsuke KOSHIOKA, Hajime TOKUNAGA, Masami JINTYOU
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Patent number: 9246011Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.Type: GrantFiled: November 26, 2013Date of Patent: January 26, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yasutaka Nakazawa, Masami Jintyou, Junichi Koezuka, Kenichi Okazaki, Takuya Hirohashi, Shunsuke Adachi
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Patent number: 9219165Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.Type: GrantFiled: June 8, 2015Date of Patent: December 22, 2015Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Takahiro Sato, Yasutaka Nakazawa, Takayuki Cho, Shunsuke Koshioka, Hajime Tokunaga, Masami Jintyou
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Publication number: 20150311346Abstract: Provided is a transistor with small parasitic capacitance or high frequency characteristics or a semiconductor device including the transistor. An oxide semiconductor film includes a first region in contact with a first conductive film, a second region in contact with a first insulating film, a third region in contact with a third insulating film, a fourth region in contact with a second insulating film, and a fifth region in contact with a second conductive film. The first insulating film is positioned over the first conductive film and the oxide semiconductor film. The second insulating film is positioned over the second conductive film and the oxide semiconductor film. The third insulating film is positioned over the first insulating film, the second insulating film, and the oxide semiconductor film. The third conductive film and the oxide semiconductor film partly overlap with each other with the third insulating film provided therebetween.Type: ApplicationFiled: April 14, 2015Publication date: October 29, 2015Inventors: Junichi KOEZUKA, Yukinori SHIMA, Masami JINTYOU, Yasutaka NAKAZAWA, Shunpei YAMAZAKI
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Publication number: 20150270404Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.Type: ApplicationFiled: June 8, 2015Publication date: September 24, 2015Inventors: Takahiro SATO, Yasutaka NAKAZAWA, Takayuki CHO, Shunsuke KOSHIOKA, Hajime TOKUNAGA, Masami JINTYOU
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Publication number: 20150270403Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.Type: ApplicationFiled: March 17, 2015Publication date: September 24, 2015Inventors: Masahiro KATAYAMA, Yasutaka NAKAZAWA, Masatoshi YOKOYAMA, Masahiko HAYAKAWA, Kenichi OKAZAKI, Shunsuke KOSHIOKA
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Patent number: 9087726Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.Type: GrantFiled: November 7, 2013Date of Patent: July 21, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takahiro Sato, Yasutaka Nakazawa, Takayuki Cho, Shunsuke Koshioka, Hajime Tokunaga, Masami Jintyou
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Publication number: 20150187878Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.Type: ApplicationFiled: December 18, 2014Publication date: July 2, 2015Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Masami JINTYOU, Yukinori SHIMA, Takashi HAMOCHI, Yasutaka NAKAZAWA
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Publication number: 20150187953Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations.Type: ApplicationFiled: December 24, 2014Publication date: July 2, 2015Inventors: Junichi Koezuka, Masami Jintyou, Yukinori Shima, Takashi Hamochi, Yasutaka Nakazawa, Shunpei Yamazaki
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Publication number: 20150155362Abstract: The semiconductor device includes an oxide semiconductor; a source electrode and a drain electrode in contact with the oxide semiconductor; a gate insulating film over the oxide semiconductor, the source electrode, and the drain electrode; and a gate electrode overlapping the oxide semiconductor, part of the source electrode, and part of the drain electrode with the gate insulating film positioned therebetween. The source electrode and the drain electrode each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti), and the thickness of a region of the oxide semiconductor over which neither the source electrode nor the drain electrode is provided is smaller than the thicknesses of regions of the oxide semiconductor over which the source electrode and the drain electrode are provided.Type: ApplicationFiled: November 21, 2014Publication date: June 4, 2015Inventors: Yasutaka Nakazawa, Takayuki Cho, Shunsuke Koshioka, Takahiro Sato, Naoya Sakamoto, Shunpei Yamazaki
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Publication number: 20150155363Abstract: A new semiconductor device in which a metal film containing Cu is used for a transistor including an oxide semiconductor film, and a method for manufacturing the semiconductor device are provided. The semiconductor device includes a transistor including a first gate electrode layer, a first gate insulating film over the first gate electrode layer, an oxide semiconductor film that is provided over the first gate insulating film to overlap the first gate electrode layer, a pair of electrode layers electrically connected to the oxide semiconductor film, a second gate insulating film over the oxide semiconductor film and the pair of electrode layers, and a second gate electrode layer that is over the second gate insulating film to overlap the oxide semiconductor film. The pair of electrode layers includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).Type: ApplicationFiled: November 21, 2014Publication date: June 4, 2015Inventors: Yasutaka Nakazawa, Takayuki Cho, Shunsuke Koshioka, Takahiro Sato, Naoya Sakamoto, Shunpei Yamazaki
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Publication number: 20150108473Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first conductive film over a substrate; forming an insulating film over the first conductive film; forming an oxide semiconductor film over the insulating film to overlap with the first conductive film; forming a second conductive film including a metal film containing molybdenum as its main component and a metal film containing copper as its main component over the oxide semiconductor film; and etching the second conductive film by an etchant. At the time of etching the second conductive film by the etchant, the oxide semiconductor film is used as an etching stopper film. In addition, the etchant which can be used for a transistor including the oxide semiconductor film is provided.Type: ApplicationFiled: October 20, 2014Publication date: April 23, 2015Inventors: Yasutaka NAKAZAWA, Shunsuke KOSHIOKA, Takayuki CHO, Takahiro SATO
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Publication number: 20140306221Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.Type: ApplicationFiled: April 8, 2014Publication date: October 16, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Yasutaka NAKAZAWA, Yukinori SHIMA, Masami JINTYOU, Masayuki SAKAKURA, Motoki NAKASHIMA
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Publication number: 20140291672Abstract: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.Type: ApplicationFiled: March 20, 2014Publication date: October 2, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Masami JINTYOU, Yasutaka NAKAZAWA, Yukinori SHIMA
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Publication number: 20140151686Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.Type: ApplicationFiled: November 26, 2013Publication date: June 5, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Yasutaka NAKAZAWA, Masami JINTYOU, Junichi KOEZUKA, Kenichi OKAZAKI, Takuya HIROHASHI, Shunsuke ADACHI
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Publication number: 20140138674Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.Type: ApplicationFiled: November 7, 2013Publication date: May 22, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takahiro SATO, Yasutaka NAKAZAWA, Takayuki CHO, Shunsuke KOSHIOKA, Hajime TOKUNAGA, Masami JINTYOU
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Publication number: 20120001179Abstract: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.Type: ApplicationFiled: June 22, 2011Publication date: January 5, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Masahiro TAKAHASHI, Takuya HIROHASHI, Katsuaki TOCHIBAYASHI, Yasutaka NAKAZAWA, Masatoshi YOKOYAMA