Abstract: Disclosed are a nozzle cleaning apparatus and a nozzle cleaning method, which are capable of effectively cleaning a nozzle for discharging a process liquid to a substrate. A nozzle 30 is accommodated in a cleaning container 2 having a funnel-shaped portion 2b. A solvent T as a cleaning liquid is supplied along an inner surface of the funnel-shaped portion 2b. The solvent T forms a vortex flow whirling around the nozzle 30. By exposing the nozzle 30 to the vortex flow, the nozzle 30 can be effectively, thoroughly cleaned.

Abstract: Disclosed are a nozzle cleaning apparatus and a nozzle cleaning method, which are capable of effectively cleaning a nozzle for discharging a process liquid to a substrate, with a simple structure and a low cost. A nozzle 30 is accommodated in a cleaning container 2 having a funnel-shaped portion 2b. A solvent T as a cleaning liquid is supplied along an inner surface of the funnel-shaped portion 2b. The solvent T forms a vortex flow whirling around the nozzle 30. By exposing the nozzle 30 to the vortex flow, the nozzle 30 can be effectively, thoroughly cleaned.

Abstract: Disclosed are a nozzle cleaning apparatus and a nozzle cleaning method, which are capable of effectively cleaning a nozzle for discharging a process liquid to a substrate, with a simple structure and a low cost. A nozzle 30 is accommodated in a cleaning container 2 having a funnel-shaped portion 2b. A solvent T as a cleaning liquid is supplied along an inner surface of the funnel-shaped portion 2b. The solvent T forms a vortex flow whirling around the nozzle 30. By exposing the nozzle 30 to the vortex flow, the nozzle 30 can be effectively, thoroughly cleaned.

Abstract: Disclosed are a nozzle cleaning apparatus and a nozzle cleaning method, which are capable of effectively cleaning a nozzle for discharging a process liquid to a substrate, with a simple structure and a low cost. A nozzle 30 is accommodated in a cleaning container 2 having a funnel-shaped portion 2b. A solvent T as a cleaning liquid is supplied along an inner surface of the funnel-shaped portion 2b. The solvent T forms a vortex flow whirling around the nozzle 30. By exposing the nozzle 30 to the vortex flow, the nozzle 30 can be effectively, thoroughly cleaned.

Abstract: Disclosed are a nozzle cleaning apparatus and a nozzle cleaning method, which are capable of effectively cleaning a nozzle for discharging a process liquid to a substrate, with a simple structure and a low cost. A nozzle 30 is accommodated in a cleaning container 2 having a funnel-shaped portion 2b. A solvent T as a cleaning liquid is supplied along an inner surface of the funnel-shaped portion 2b. The solvent T forms a vortex flow whirling around the nozzle 30. By exposing the nozzle 30 to the vortex flow, the nozzle 30 can be effectively, thoroughly cleaned.

Abstract: A heat treatment apparatus configured to perform heat treatment on a wafer having a surface on which a coating film is formed, and includes: a holding member for holding the wafer almost horizontally; a chamber for housing the wafer held by the holding member; a hot plate having gas permeability and disposed above the wafer held by the holding member in the chamber so that the coating film formed on the wafer can be directly heated; and an exhaust port provided on the top face of the chamber and exhausting gas in the chamber. Gas generated from the coating film passes through the hot plate and is exhausted from the chamber. Accordingly, uniformity of a coating film is improved. As a result, CD uniformity may be improved, LER characteristics may be improved, and a smooth pattern side face may be obtained.

Abstract: A heat treatment apparatus is used for performing heat treatment on a wafer (W) having a surface on which a coating film is formed, and includes: a holding member (34) for holding the wafer almost horizontally; a chamber (30) for housing the wafer held by the holding member; a hot plate (31) having gas permeability and disposed above the wafer held by the holding member in the chamber so that the coating film formed on the wafer can be directly heated; and an exhaust port (33) provided on the top face of the chamber and exhausting gas in the chamber. Gas generated from the coating film when the coating film is heated by the hot plate passes through the hot plate and is exhausted to the outside of the chamber. According to the heat treatment apparatus, uniformity of a coating film is improved. As a result, CD uniformity can be improved, LER characteristics are changed for the better, and a smooth pattern side face can be obtained.