Abstract: A method of manufacturing an insulating film-forming material comprising dissolving an inorganic polymer compound or an organic polymer compound in an organic solvent having a solubility in water of 100 g/100 cc or less at 20° C., and causing the solution to come in contact with water or an acidic aqueous solution to perform liquid-liquid extraction. The insulating film-forming material has a low metal impurity content and is capable of forming a silica-based film having excellent relative dielectric constant characteristics and low leakage current characteristics.

Abstract: A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the formula (1): R1aSi(OR2)4−a, and (A-2) compounds represented by the formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c; and (B) a compound represented by the formula (3): R8O (CHCH3CH2O)eR9.

Abstract: A method of manufacturing an insulating film-forming material comprising dissolving an inorganic polymer compound or an organic polymer compound in an organic solvent having a solubility in water of 100 g/100 cc or less at 20° C., and causing the solution to come in contact with water or an acidic aqueous solution to perform liquid-liquid extraction. The insulating film-forming material has a low metal impurity content and is capable of forming a silica-based film having excellent relative dielectric constant characteristics and low leakage current characteristics.

Abstract: A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption.

Abstract: Electronic parts and a process for manufacturing the electronic parts are provided. The electronic parts comprise an electric insulating material exhibiting a high heat resistance and low dielectric constant as a structural component. The electric insulating material is formed of a polyimide containing a recurring unit represented by the following general formula (1).

Abstract: A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption.