Patents by Inventor Yasuto AKATSUKA

Yasuto AKATSUKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240313158
    Abstract: A light-emitting device includes a stacked body that includes a tapered portion having a tapered shape having a width increasing from side of a first electrode toward side of a second electrode, a first low refractive index portion that is provided on a side surface of the tapered portion, a second low refractive index portion that is provided on side of the second electrode opposite to the stacked body, and a metal portion provided on a side surface of the second low refractive index portion, wherein the stacked body includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer, light generated in the light-emitting layer is emitted from the side of the second electrode, and a surface of the second low refractive index portion on side opposite to the second electrode is a lens surface.
    Type: Application
    Filed: March 14, 2024
    Publication date: September 19, 2024
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Yasuto AKATSUKA
  • Publication number: 20240313159
    Abstract: A light-emitting device includes: a first electrode; a second electrode has a light-transmitting property; a first semiconductor layer that is provided between the first electrode and the second electrode; a second semiconductor layer that is provided between the first semiconductor layer and the second electrode and is in contact with the second electrode; a light-emitting layer that is provided between the first semiconductor layer and the second semiconductor layer; and a light-transmitting portion provided on a side of the second electrode opposite to the second semiconductor layer, wherein light generated in the light-emitting layer is emitted from side of the second electrode, a refractive index of the second electrode is lower than a refractive index of the second semiconductor layer and is higher than a refractive index of the light-transmitting portion, and a surface of the second semiconductor layer in contact with the second electrode has an uneven structure.
    Type: Application
    Filed: March 14, 2024
    Publication date: September 19, 2024
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Yasuto AKATSUKA
  • Patent number: 11552216
    Abstract: A light emitting apparatus includes an electrode and a laminated structure. The laminated structure includes an n-type first semiconductor layer, a light emitting layer, a p-type second semiconductor layer, a tunnel junction layer, and an n-type third semiconductor layer. The electrode is electrically connected to the first semiconductor layer. The first semiconductor layer, the light emitting layer, the second semiconductor layer, the tunnel junction layer, and the third semiconductor layer are arranged in a presented order. The light emitting layer and the first semiconductor layer form a columnar section.
    Type: Grant
    Filed: March 8, 2021
    Date of Patent: January 10, 2023
    Inventors: Yasuto Akatsuka, Hiroyuki Shimada, Koichiro Akasaka, Katsumi Kishino
  • Publication number: 20220166194
    Abstract: A light emitting apparatus includes a laminate including a columnar section. The columnar section includes an n-type semiconductor layer, a first p-type semiconductor layer, a light emitting layer provided between the n-type semiconductor layer and the first p-type semiconductor layer, and a second p-type semiconductor layer in contact with the first p-type semiconductor layer. The first p-type semiconductor layer is provided between the light emitting layer and the second p-type semiconductor layer. The first p-type semiconductor layer has a c-plane and a facet surface. The second p-type semiconductor layer has a c-plane region provided at the c-plane and a facet-surface region provided at the facet surface. The c-plane region has negatively polarized charges at an interface with the first p-type semiconductor layer. The facet-surface region has positively polarized charges at the interface.
    Type: Application
    Filed: November 18, 2021
    Publication date: May 26, 2022
    Applicants: SEIKO EPSON CORPORATION, SOPHIA SCHOOL CORPORATION
    Inventors: Yasuto AKATSUKA, Katsumi KISHINO
  • Publication number: 20210280740
    Abstract: A light emitting apparatus includes an electrode and a laminated structure. The laminated structure includes an n-type first semiconductor layer, a light emitting layer, a p-type second semiconductor layer, a tunnel junction layer, and an n-type third semiconductor layer. The electrode is electrically connected to the first semiconductor layer. The first semiconductor layer, the light emitting layer, the second semiconductor layer, the tunnel junction layer, and the third semiconductor layer are arranged in a presented order. The light emitting layer and the first semiconductor layer form a columnar section.
    Type: Application
    Filed: March 8, 2021
    Publication date: September 9, 2021
    Inventors: Yasuto AKATSUKA, Hiroyuki SHIMADA, Koichiro AKASAKA