Abstract: It is an object of the present invention to achieve reduced faults in manufacturing steps and increased reliability by relieving electric field strength of a surface of a power semiconductor chip. The present invention includes: a power semiconductor chip disposed on an insulating substrate; wiring connected to a surface conductor pattern in an element region of the power semiconductor chip; a low dielectric constant film disposed between the wiring and the peripheral region; and a sealing material formed so as to cover the insulating substrate, the power semiconductor chip, the wiring, and the low dielectric constant film. The low dielectric constant film has a dielectric constant lower than that of the sealing material.

Abstract: It is an object of the present invention to achieve reduced faults in manufacturing steps and increased reliability by relieving electric field strength of a surface of a power semiconductor chip. The present invention includes: a power semiconductor chip disposed on an insulating substrate; wiring connected to a surface conductor pattern in an element region of the power semiconductor chip; a low dielectric constant film disposed between the wiring and the peripheral region; and a sealing material formed so as to cover the insulating substrate, the power semiconductor chip, the wiring, and the low dielectric constant film. The low dielectric constant film has a dielectric constant lower than that of the sealing material.

Abstract: A power semiconductor module comprises: a heat dissipation plate; an insulating wiring board having an upper electrode and a lower electrode, the lower electrode joined to the heat dissipation plate via a first solder; a semiconductor chip joined to the upper electrode via a second solder; a first low-k dielectric film coating sides of the lower electrode and the first solder; a second low-k dielectric film coating sides of the semiconductor chip and the second solder; a case on the heat dissipation plate and surrounding the insulating wiring board and the semiconductor chip; and an insulator filled in the case and coating the insulating wiring board, the semiconductor chip, and the first and second low-k dielectric films.

Abstract: A power semiconductor module comprises: a heat dissipation plate; an insulating wiring board having an upper electrode and a lower electrode, the lower electrode joined to the heat dissipation plate via a first solder; a semiconductor chip joined to the upper electrode via a second solder; a first low-dielectric film coating sides of the lower electrode and the first solder; a second low-dielectric film coating sides of the semiconductor chip and the second solder; a case on the heat dissipation plate and surrounding the insulating wiring board and the semiconductor chip; and an insulator filled in the case and coating the insulating wiring board, the semiconductor chip, and the first and second low-dielectric films.

Abstract: A power semiconductor module of the present invention comprises: a heat sink 1; a circuit substrate 2 mounted on the heat sink 1; a conductive pattern 10 provided on the circuit substrate 2; a low dielectric constant film 11 covering the conductive pattern 10; a case 7 provided on the heat sink 1 so as to enclose the circuit substrate 2; and a soft insulator 9 filling the space within the case 7. The low dielectric constant film 11 is preferably formed of silicon rubber, polyimide, or epoxy resin.

Abstract: A power semiconductor module of the present invention comprises: a heat sink 1; a circuit substrate 2 mounted on the heat sink 1; a conductive pattern 10 provided on the circuit substrate 2; a low dielectric constant film 11 covering the conductive pattern 10; a case 7 provided on the heat sink 1 so as to enclose the circuit substrate 2; and a soft insulator 9 filling the space within the case 7. The low dielectric constant film 11 is preferably formed of silicon rubber, polyimide, or epoxy resin.