Abstract: The present invention is to provide a TiO2—SiO2 glass whose coefficient of linear thermal expansion at the time of irradiating with high EUV energy light becomes substantially zero when used as an optical member of an exposure tool for EUVL. The present invention relates to a TiO2-containing silica glass, having a fictive temperature of 1,000° C. or lower, a OH concentration of 600 ppm or higher, a temperature at which the coefficient of linear thermal expansion becomes 0 ppb/° C. of from 40 to 110° C., and an average coefficient of linear thermal expansion in the temperature range of 20 to 100° C., of 50 ppb/° C. or lower.

Abstract: The present invention is to provide a TiO2—SiO2 glass having suitable thermal expansion properties as an optical member of an exposure tool for EUVL. The present invention relates to a TiO2-containing silica glass having a temperature, at which a coefficient of thermal expansion is 0 ppb/° C., falling within the range of 23±4° C. and a temperature width, in which a coefficient of thermal expansion is 0±5 ppb/° C., of 5° C. or more.

Abstract: An object of the present invention is to provide a TiO2-containing quartz glass substrate which, when used as a mold base for nanoimprint lithography, can form a concavity and convexity pattern having a dimensional variation falling within ±10%. The invention relates to a TiO2-containing quartz glass substrate: in which a coefficient of thermal expansion in the range of from 15 to 35° C. is within ±200 ppb/° C.; a TiO2 concentration is from 4 to 9 wt %; and a TiO2 concentration distribution, in a substrate surface on the side where a transfer pattern is to be formed, is within ±1 wt %.

Abstract: The claimed invention relates to a process for producing an optical material for EUV lithography, wherein the optical material contains a silica glass having a TiO2 concentration of from 3 to 12 mass % and a hydrogen molecule content of less than 5×1017 molecules/cm3 in the glass. The process including coating a multilayer film on the silica glass by ion beam sputtering.

Abstract: A silica glass containing TiO2, which has a fictive temperature of at most 1,200° C., a F concentration of at least 100 ppm and a coefficient of thermal expansion of 0±200 ppb/° C. from 0 to 100° C. A process for producing a silica glass containing TiO2, which comprises a step of forming a porous glass body on a target quartz glass particles obtained by flame hydrolysis of glass-forming materials, a step of obtaining a fluorine-containing porous glass body, a step of obtaining a fluorine-containing vitrified glass body, a step of obtaining a fluorine-containing formed glass body and a step of carrying out annealing treatment.

Abstract: A silica glass containing TiO2, which has a fictive temperature of at most 1,200° C., a F concentration of at least 100 ppm and a coefficient of thermal expansion of 0±200 ppb/° C. from 0 to 100° C. A process for producing a silica glass containing TiO2, which comprises a step of forming a porous glass body on a target quartz glass particles obtained by flame hydrolysis of glass-forming materials, a step of obtaining a fluorine-containing porous glass body, a step of obtaining a fluorine-containing vitrified glass body, a step of obtaining a fluorine-containing formed glass body and a step of carrying out annealing treatment.

Abstract: A silica glass containing TiO2, characterized in that the fluctuation of the refractive index (?n) is at most 2×10?4 within an area of 30 mm×30 mm in at least one plane. A silica glass containing TiO2, characterized in that the TiO2 concentration is at least 1 mass %, and the striae pitch is at most 10 ?m. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO2, and the fluctuation of the refractive index (?n) is at most 2×10?4 in a plane perpendicular to the incident light direction. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO2, wherein the TiO2 concentration is at least 1 mass %, and the difference between the maximum value and the minimum value of the TiO2 concentration is at most 0.06 mass % in a plane perpendicular to the incident light direction.

Abstract: A silica glass containing TiO2, which has a fictive temperature of at most 1,200° C., a F concentration of at least 100 ppm and a coefficient of thermal expansion of 0±200 ppb/° C. from 0 to 100° C. A process for producing a silica glass containing TiO2, which comprises a step of forming a porous glass body on a target quartz glass particles obtained by flame hydrolysis of glass-forming materials, a step of obtaining a fluorine-containing porous glass body, a step of obtaining a fluorine-containing vitrified glass body, a step of obtaining a fluorine-containing formed glass body and a step of carrying out annealing treatment.

Abstract: It is to provide a silica glass containing TiO2, having a wide temperature range wherein the coefficient of thermal expansion is substantially zero. A silica glass containing TiO2, which has a TiO2 concentration of from 3 to 10 mass %, a OH group concentration of at most 600 mass ppm and a Ti3+ concentration of at most 70 mass ppm, characterized by having a fictive temperature of at most 1,200° C., a coefficient of thermal expansion from 0 to 100° C. of 0±150 ppb/° C., and an internal transmittance T400-700 per 1 mm thickness in a wavelength range of from 400 to 700 nm of at least 80%. A process for producing a silica glass containing TiO2, which comprises porous glass body formation step, F-doping step, oxygen treatment step, densification step and vitrification step.

Abstract: A silica glass containing TiO2, which has a fictive temperature of at most 1,200° C., an OH group concentration of at most 600 ppm and a coefficient of thermal expansion of 0±200 ppb/° C. from 0 to 100° C.

Abstract: A silica glass containing TiO2, which has a fictive temperature of at most 1,200° C., a F concentration of at least 100 ppm and a coefficient of thermal expansion of 0±200 ppb/° C. from 0 to 100° C. A process for producing a silica glass containing TiO2, which comprises a step of forming a porous glass body on a target quartz glass particles obtained by flame hydrolysis of glass-forming materials, a step of obtaining a fluorine-containing porous glass body, a step of obtaining a fluorine-containing vitrified glass body, a step of obtaining a fluorine-containing formed glass body and a step of carrying out annealing treatment.

Abstract: A silica glass containing from 3 to 10 mass % of TiO2, which has a coefficient of thermal expansion from 0 to 100° C., i.e. CTE0 to 100, of 0±300 ppb/° C. and an internal transmittance per mm in thickness within a wavelength region of from 200 to 700 nm, i.e. T200 to 700, of at most 80%.

Abstract: Conventional TiO2—SiO2 glass contains hydrogen atoms substantially, and during deposition under ultrahigh vacuum condition, the hydrogen molecules will diffuse in the chamber, and H2 molecules will be taken into a film thereby formed. Hydrogen molecules will readily diffuse, and the optical characteristics of the multilayer film are likely to be thereby changed. In an optical material for EUV lithography, a multilayer film is coated by ion beam sputtering on a silica glass having a TiO2 concentration of from 3 to 12 mass % and a hydrogen molecule content of less than 5×1017 molecules/cm3 in the glass.

Abstract: It is to provide a silica glass containing TiO2, having a wide temperature range wherein the coefficient of thermal expansion is substantially zero. A silica glass containing TiO2, which has a TiO2 concentration of from 3 to 10 mass %, a OH group concentration of at most 600 mass ppm and a Ti3+ concentration of at most 70 mass ppm, characterized by having a fictive temperature of at most 1,200° C., a coefficient of thermal expansion from 0 to 100° C. of 0±150 ppb/° C., and an internal transmittance T400-700 per 1 mm thickness in a wavelength range of from 400 to 700 nm of at least 80%. A process for producing a silica glass containing TiO2, which comprises porous glass body formation step, F-doping step, oxygen treatment step, densification step and vitrification step.

Abstract: A silica glass containing from 3 to 10 mass % of TiO2, which has a coefficient of thermal expansion from 0 to 100° C., i.e. CTE0 to 100, of 0±300 ppb/° C. and an internal transmittance per mm in thickness within a wavelength region of from 200 to 700 nm, i.e. T200 to 700, of at most 80%.

Abstract: A silica glass containing TiO2, which has a fictive temperature of at most 1,200° C., a F concentration of at least 100 ppm and a coefficient of thermal expansion of 0±200 ppb/° C. from 0 to 100° C. A process for producing a silica glass containing TiO2, which comprises a step of forming a porous glass body on a target quartz glass particles obtained by flame hydrolysis of glass-forming materials, a step of obtaining a fluorine-containing porous glass body, a step of obtaining a fluorine-containing vitrified glass body, a step of obtaining a fluorine-containing formed glass body and a step of carrying out annealing treatment.

Abstract: A silica glass containing TiO2, characterized in that the fluctuation of the refractive index (?n) is at most 2×10?4 within an area of 30 mm×30 mm in at least one plane. A silica glass containing TiO2, characterized in that the TiO2 concentration is at least 1 mass %, and the striae pitch is at most 10 ?m. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO2, and the fluctuation of the refractive index (?n) is at most 2×10?4 in a plane perpendicular to the incident light direction. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO2, wherein the TiO2 concentration is at least 1 mass %, and the difference between the maximum value and the minimum value of the TiO2 concentration is at most 0.06 mass % in a plane perpendicular to the incident light direction.

Abstract: A silica glass containing TiO2, which has a fictive temperature of at most 1,200° C., an OH group concentration of at most 600 ppm and a coefficient of thermal expansion of 0±200 ppb/° C. from 0 to 100° C.