Abstract: In the single crystal SiC according to the invention, heat treatment is performed in an inert gas atmosphere under a state where a cutting plane of a single crystal &agr;-SiC substrate which is produced in a plate-like form by cutting along (1 1 {overscore (2)} 0) Miller index plane ±10°, and (2 2 0) Miller index plane of a polycrystalline &bgr;-SiC plate are superimposed on each other, whereby single crystal having a crystal orientation of an orientation of the cutting plane is integrally grown in the polycrystalline &bgr;-SiC plate in conformity with the single crystal &agr;-SiC substrate. According to this configuration, single crystal SiC of very high quality is obtained to which influence of micropipes of the single crystal &agr;-SiC substrate is not transferred, thereby preventing distortion and micropipe defects from occurring.