Patents by Inventor Yasuyoshi Miyaji
Yasuyoshi Miyaji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10138565Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.Type: GrantFiled: January 4, 2017Date of Patent: November 27, 2018Assignee: TruTag Technologies, Inc.Inventors: Takao Yonehara, Subramanian Tamilmani, Karl-Josef Kramer, Jay Ashjaee, Mehrdad M. Moslehi, Yasuyoshi Miyaji, Noriyuki Hayashi, Takamitsu Inahara
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Publication number: 20180323087Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.Type: ApplicationFiled: January 4, 2017Publication date: November 8, 2018Inventors: Takao Yonehara, Subramanian Tamilmani, Karl-Josef Kramer, Jay Ashjaee, Mehrdad M. Moslehi, Yasuyoshi Miyaji, Noriyuki Hayashi, Takamitsu Inahara
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Patent number: 9771662Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.Type: GrantFiled: July 6, 2015Date of Patent: September 26, 2017Assignee: OB REALTY, LLCInventors: Takao Yonehara, Subramanian Tamilmani, Karl-Josef Kramer, Jay Ashjaee, Mehrdad M. Moslehi, Yasuyoshi Miyaji, Noriyuki Hayashi, Takamitsu Inahara
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Publication number: 20170243767Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.Type: ApplicationFiled: January 4, 2017Publication date: August 24, 2017Inventors: Takao Yonehara, Subramanian Tamilmani, Karl-Josef Kramer, Jay Ashjaee, Mehrdad M. Moslehi, Yasuyoshi Miyaji, Noriyuki Hayashi, Takamitsu Inahara
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Publication number: 20160186358Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.Type: ApplicationFiled: July 6, 2015Publication date: June 30, 2016Inventors: Takao Yonehara, Subramanian Tamilmani, Karl-Josef Kramer, Jay Ashjaee, Mehrdad M. Moslehi, Yasuyoshi Miyaji, Noriyuki Hayashi, Takamitsu Inahara
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Publication number: 20150308008Abstract: An apparatus for anodizing substrates immersed in an electrolyte solution. A substrate holder mounted in a storage tank includes a first support unit having first support elements for supporting, in a liquid-tight condition, portions of the substrates, and a second support unit attachable to and detachable from the first support unit and having second support elements for supporting, in a liquid-tight condition, the remaining portions of the substrates. The second support unit includes a first portion second support unit having support elements for supporting first portions of the remaining portions of the surfaces of the substrates, and a second portion second support unit having support elements for supporting second portions of the remaining portions of the surfaces of the substrates.Type: ApplicationFiled: March 30, 2015Publication date: October 29, 2015Inventors: Yasuyoshi MIYAJI, Noriyuki HAYASHI, Takamitsu INAHARA, Takao YONEHARA, Karl-Josef KRAMER, Subramanian TAMILMANI
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Patent number: 9076642Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.Type: GrantFiled: September 24, 2011Date of Patent: July 7, 2015Assignee: Solexel, Inc.Inventors: Takao Yonehara, Subramanian Tamilmani, Karl-Josef Kramer, Jay Ashjaee, Mehrdad M. Moslehi, Yasuyoshi Miyaji, Noriyuki Hayashi, Takamitsu Inahara
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Patent number: 8992746Abstract: An apparatus for anodizing substrates immersed in an electrolyte solution. A substrate holder mounted in a storage tank includes a first support unit having first support elements for supporting, in a liquid-tight condition, only lower circumferential portions of the substrates, and a second support unit attachable to and detachable from the first support unit and having second support elements for supporting, in a liquid-tight condition, remaining circumferential portions of the substrates. A drive mechanism separates the first support unit and the second support unit when loading and unloading the substrates, and for connecting the first support unit and the second support unit after the substrates are placed in the substrate holder.Type: GrantFiled: December 2, 2011Date of Patent: March 31, 2015Assignees: Dainippon Screen Mfg. Co., Ltd., Solexel, Inc.Inventors: Yasuyoshi Miyaji, Noriyuki Hayashi, Takamitsu Inahara, Takao Yonehara, Karl-Josef Kramer, Subramanian Tamilmani
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Publication number: 20130180847Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.Type: ApplicationFiled: September 24, 2011Publication date: July 18, 2013Inventors: Takao Yonehara, Subramanian Tamilmani, Karl-Josef Kramer, Jay Ashjaee, Mehrdad M. Moslehi, Yasuyoshi Miyaji, Noriyuki Hayashi, Takamitsu Inahara
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Publication number: 20120138455Abstract: An apparatus for anodizing substrates immersed in an electrolyte solution. A substrate holder mounted in a storage tank includes a first support unit having first support elements for supporting, in a liquid-tight condition, only lower circumferential portions of the substrates, and a second support unit attachable to and detachable from the first support unit and having second support elements for supporting, in a liquid-tight condition, remaining circumferential portions of the substrates. A drive mechanism separates the first support unit and the second support unit when loading and unloading the substrates, and for connecting the first support unit and the second support unit after the substrates are placed in the substrate holder.Type: ApplicationFiled: December 2, 2011Publication date: June 7, 2012Inventors: Yasuyoshi MIYAJI, Noriyuki HAYASHI, Takamitsu INAHARA, Takao YONEHARA, Karl-Josef KRAMER, Subramanian TAMILMANI
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Patent number: 7764355Abstract: A stage body has a holding surface for placing a substrate thereon. A predetermined embossed configuration is formed by embossing on the holding surface, and thereafter an alumina film in an amorphous state is formed by an anodic oxidation process on the holding surface. The alumina film having an amorphous structure is dense and strong to provide high wear resistance and to substantially prevent separation electrification. This provides a substrate stage having high wear resistance and capable of preventing separation electrification.Type: GrantFiled: July 18, 2007Date of Patent: July 27, 2010Assignees: Tohoku University, Future Vision Inc.Inventors: Tadahiro Ohmi, Yusuke Muraoka, Yasuyoshi Miyaji, Yasushi Nagashima
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Publication number: 20080024742Abstract: A stage body has a holding surface for placing a substrate thereon. A predetermined embossed configuration is formed by embossing on the holding surface, and thereafter an alumina film in an amorphous state is formed by an anodic oxidation process on the holding surface. The alumina film having an amorphous structure is dense and strong to provide high wear resistance and to substantially prevent separation electrification. This provides a substrate stage having high wear resistance and capable of preventing separation electrification.Type: ApplicationFiled: July 18, 2007Publication date: January 31, 2008Inventors: Tadahiro Ohmi, Yusuke Muraoka, Yasuyoshi Miyaji, Yasushi Nagashima
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Patent number: 5200025Abstract: A method of forming small through-holes in a thin metal layer including the steps of forming resist films having openings formed in accordance with a predetermined pattern; etching one or both sides of the thin metal plate and stopping etching before through-holes are formed; removing the overhang of the resist film by spraying high pressure fluid onto the etched side of the thin metal plate; covering the surface by an etch-resisting layer; forming through-holes by etching the side not covered; and stripping the etch-resisting layer and the resist film.Type: GrantFiled: September 19, 1991Date of Patent: April 6, 1993Assignee: Dainippon Screen Manufacturing Co. Ltd.Inventors: Keiji Toei, Yasuyoshi Miyaji, Masanobu Sato, Akihiro Inagaki, Seiji Tonogai, Koichi Omoto