Abstract: A semiconductor device includes: at least one power semiconductor element; a sealing resin disposed so as to seal the power semiconductor element; and a plurality of electrical terminals each electrically connected to the power semiconductor element and each including a protrusion protruding from a surface of the sealing resin. The protrusion includes a first part that is provided on a side of the sealing resin in a protrusion direction of the protrusion and of which a cross-section intersecting the protrusion direction has one of a circular shape and an oval shape.

Abstract: In a converter circuit of an electric power conversion device, an adjustment portion divides a voltage of a battery input to a semiconductor module, by a first capacity element and a second capacity element that are connected in series to each other. Then, a middle point between the first capacity element and the second capacity element is connected to a cooler to fix a potential thereof. The electric power conversion device can ensure that a waveform of a surge voltage that is generated on a creepage surface between a lead frame terminal and the cooler has a negative voltage range (a range where an offset voltage is applied).

Abstract: A semiconductor device includes: at least one power semiconductor element; a sealing resin disposed so as to seal the power semiconductor element; and a plurality of electrical terminals each electrically connected to the power semiconductor element and each including a protrusion protruding from a surface of the sealing resin. The protrusion includes a first part that is provided on a side of the sealing resin in a protrusion direction of the protrusion and of which a cross-section intersecting the protrusion direction has one of a circular shape and an oval shape.

Abstract: In a converter circuit of an electric power conversion device, an adjustment portion divides a voltage of a battery input to a semiconductor module, by a first capacity element and a second capacity element that are connected in series to each other. Then, a middle point between the first capacity element and the second capacity element is connected to a cooler to fix a potential thereof. The electric power conversion device can ensure that a waveform of a surge voltage that is generated on a creepage surface between a lead frame terminal and the cooler has a negative voltage range (a range where an offset voltage is applied).

Abstract: A transition metal silicide-Si composite powder and a method of manufacturing the composite powder are provided, the composite powder containing one or more transition metal elements (M), and having a Si/M ratio (z) of 2.0?z?20.0 and a specific surface area of 2.5 m2/g or more. In addition, CaSiy-based powder for manufacturing transition metal silicide-Si composite powder and a method of manufacturing the CaSiy-based powder are provided, the CaSiy-based powder having a Si/Ca ratio (w) of 2.0?w?20.0 and containing at least a Ca-silicide phase.

Abstract: Grain oriented ceramics constituted of a polycrystalline body having a first perovskite-type alkali-pentavalent metal oxide compound as the main phase, in which a specific crystal plane of each grain constituting the polycrystalline body is oriented. The grain oriented ceramics are obtained by molding a mixture of a first anisotropically-shaped powder A of which developed plane has a lattice matching with a specific crystal plane of the first perovskite-type alkali-pentavalent metal oxide compound and a first reaction material capable of reacting with the first anisotropically-shaped powder A thereby forming at least the first perovskite-type alkali-pentavalent metal oxide compound such that the first anisotropically-shaped powder A is oriented, and by heating them.

Abstract: To provide a production method of a polycrystalline ceramic body with excellent density, a preparation step, a mixing step, a forming step and a heat-treating step are performed. In the preparation step, a coarse particle ceramic powder, and a fine particle powder having an average particle diameter of ? or less of the average particle diameter of the coarse particle ceramic powder are prepared. In the mixing step, the coarse particle ceramic powder and the fine particle powder are mixed to produce a raw material mixture. In the forming step, the raw material mixture is formed to a shaped body. In the heat-treating step, the shaped body is heated and thereby sintered to produce a polycrystalline ceramic body. In the heat-treating step, a temperature elevating process and a first holding process are performed and at the same time, a second holding process and/or a cooling process are performed.

Abstract: A piezoelectric actuator 1 includes a piezoelectric element 2, which has a pair of electrodes formed on the surface of a piezoelectric ceramic member, as a drive source. The piezoelectric actuator 1 satisfies at least one of the following requirements (a) to (c): (a) the variation width WC in an apparent dynamic capacity C [F] due to a change in temperature should fall within ±11% over a specific temperature range from ?30° C. to 80° C.; (b) the variation width WL in a displacement L [?m] due to a change in temperature should fall within ±14% over the specific temperature range from ?30° C. to 80° C.; and (c) the variation width WL/C in a quotient L/C due to a change in temperature should fall within ±12% over the specific temperature range from ?30° C. to 80° C., wherein C [F] denotes the apparent dynamic capacity and L [?m] denotes the displacement.

Abstract: The piezoelectric actuator includes a piezoelectric element (2) including a sheet of piezoelectric ceramic and electrodes formed at least part of the surface of the sheet of piezoelectric ceramic, and a holding member (4) holding the piezoelectric element (2); The piezoelectric at least one of the requirements (a) to (e) described below; (a) The bulk density shall be equal to or smaller than 5 g/cm3, and the Young's modulus Y11E calculated according to a resonance-antiresonance method shall be equal to or larger than 90 GPa; (b) The coefficient of thermal conductivity shall be equal to or larger than 2 Wm?1K?1; (c) The coefficient of thermal expansion shall be equal to or larger than 3.0 ppm/° C. over a temperature range from ?30° C. to 160° C.; (d) The pyroelectric coefficient shall be equal to or smaller than 400 ?Cm?2K?1 over the temperature range from ?30° C. to 160° C.

Abstract: An anisotropically shaped powder composed of oriented grains with a specific crystal plane {100} of each crystal grain being oriented, a related manufacturing method and a method of manufacturing a crystal oriented ceramics using such an anisotropically shaped powder are disclosed. The anisotropically shaped powder includes a principal component of an isotropic perovskite-based pentavalent metal acid alkali compound represented by a general formula (1): (KaNa1?a)(Nb1?bTab)O3 (wherein 0?a?0.8 and 0.02?b?0.4). In manufacturing the anisotropically shaped powder, a bismuth-layer-like perovskite-based compound of a specific composition is acid treated; a source of K or the like is added to the resulting acid-treated substance; and the resulting mixture is heated.

Abstract: A piezoelectric actuator 1 includes a piezoelectric element 2, which has a pair of electrodes formed on the surface of a piezoelectric ceramic member, as a drive source. The piezoelectric actuator 1 satisfies at least one of the following requirements (a) to (c): (a) the variation width WC in an apparent dynamic capacity C [F] due to a change in temperature should fall within ±11% over a specific temperature range from ?30° C. to 80° C.; (b) the variation width WL in a displacement L [?m] due to a change in temperature should fall within ±14% over the specific temperature range from ?30° C. to 80° C.; and (c) the variation width WL/C in a quotient L/C due to a change in temperature should fall within ±12% over the specific temperature range from ?30° C. to 80° C., wherein C [F] denotes the apparent dynamic capacity and L [?m] denotes the displacement.

Abstract: This invention provides a piezoelectric ceramic composition that does not contain lead, can be sintered at a normal pressure and is excellent in at least one of a piezoelectric constant, an electro-mechanical coupling coefficient, a dielectric loss, a relative dielectric constant and a Curie point, its production method, and a piezoelectric device and a dielectric device each utilizing the piezoelectric ceramic composition. The invention relates to a piezoelectric composition expressed by the general formula {Lix(K1?yNay)1?x}(Nb1?zSbz)O3, each of x, y and z respectively falling within composition ranges of 0?x?0.2, 0?y?1.0 and 0?z?0.2 (with the exception of x=z=0), and its production method. The invention further relates to a piezoelectric device having a piezoelectric body formed of the piezoelectric ceramic composition described above and a dielectric device having a dielectric body formed of the piezoelectric ceramic composition described above.

Abstract: A piezoelectric sensor capable of preventing fluctuation in the sensitivity of the piezoelectric sensor over a wide temperature range is provided. This is a piezoelectric sensor comprising a piezoelectric element and a holding member for holding the piezoelectric element, the piezoelectric element comprising a piezoelectric ceramic having formed on the surfaces thereof a pair of electrodes. The piezoelectric ceramic satisfies the following requirement (a) and/or requirement (b): (a) in the temperature range from ?30° C. to 160° C., the thermal expansion coefficient is 3.0 ppm/° C. or more, and (b) in the temperature range from ?30° C. to 160° C., the pyroelectric coefficient is 400 ?Cm?2K?1 or less.

Abstract: The present invention provides a piezoelectric actuator that enjoys excellent practicality. The piezoelectric actuator includes a piezoelectric element (2) including a sheet of piezoelectric ceramic and electrodes formed at least part of the surface of the sheet of piezoelectric ceramic, and a holding member (4) holding the piezoelectric element (2). The piezoelectric at least one of the requirements (a) to (e) described below. (a) The bulk density shall be equal to or smaller than 5 g/cm3, and the Young's modulus Y11E calculated according to a resonance-antiresonance method shall be equal to or larger than 90 GPa. (b) The coefficient of thermal conductivity shall be equal to or larger than 2 Wm?1K?1. (c) The coefficient of thermal expansion shall be equal to or larger than 3.0 ppm/° C. over a temperature range from ?30° C. to 160° C. (d) The pyroelectric coefficient shall be equal to or smaller than 400 ?Cm?2K?1 over the temperature range from ?30° C. to 160° C.

Abstract: This invention provides a piezoelectric ceramic composition that does not contain lead, can be sintered at a normal pressure and has a high electro-mechanical coupling coefficient and a small dielectric loss, its production method, and a piezoelectric device utilizing the piezoelectric ceramic composition. The invention relates to a piezoelectric composition containing a compound expressed by the general formula {Lix(K1-yNay)1-x}(Nb1-zTaz)O3, each of x, y and z respectively falling within composition range of 0?x?0.2, 0?y?1.0 and 0?z?0.4, as its main component, and further containing nickel or a nickel-containing compound. To provide a piezoelectric device that does not contain lead, can be sintered at a normal pressure and has a high electro-mechanical coupling coefficient Kp and a small dielectric loss, the piezoelectric ceramic composition of the invention is expressed by the general formula {Lix(K1-yNay)1-x}(Nb1-z-nTaz(Mn0.5W0.

Abstract: A piezoelectric ceramic composition not containing lead, able to be sintered at ordinary pressure, and superior to the past in at least one of the properties unique to piezoelectric ceramic compositions such as the piezoelectric d31 constant, that is, a piezoelectric ceramic composition having a compound of a general formula {Lix(K1-yNay)1-x}(Nb1-z-wTazSbw)O3 where x, y, z, and w are in the ranges of 0?x?0.2, 0?y?1, 0<z?0.4, and 0<w?0.2 as a main ingredient, where the piezoelectric ceramic composition contains at least one metal element selected from (1) palladium, silver, gold, ruthenium, rhodium, rhenium, osmium, iridium, and platinum, (2) nickel, iron, manganese, copper, and zinc, or (3) magnesium, calcium, strontium, and barium as an added element, and a method of production of the same and a piezoelectric element and dielectric element utilizing that piezoelectric ceramic composition.

Abstract: To provide a production method of a polycrystalline ceramic body with excellent density, a preparation step, a mixing step, a forming step and a heat-treating step are performed. In the preparation step, a coarse particle ceramic powder, and a fine particle powder having an average particle diameter of ? or less of the average particle diameter of the coarse particle ceramic powder are prepared. In the mixing step, the coarse particle ceramic powder and the fine particle powder are mixed to produce a raw material mixture. In the forming step, the raw material mixture is formed to a shaped body. In the heat-treating step, the shaped body is heated and thereby sintered to produce a polycrystalline ceramic body. In the heat-treating step, a temperature elevating process and a first holding process are performed and at the same time, a second holding process and/or a cooling process are performed.

Abstract: To provide a grain oriented ceramic capable of exerting excellent piezoelectric properties, a production method thereof, and a piezoelectric material, a dielectric material, a thermoelectric conversion element and an ion conducting element each using the grain oriented ceramic, there is provided a grain oriented ceramic comprising, as the main phase, an isotropic perovskite-type compound which is represented by formula (1): {Lix(K1?yNay)1?x}(Nb1?z?wTazSbw)O3 in which x, y, z and w are in respective composition ranges of 0?x?0.2, 0?y?1, 0?z?0.4, 0?w?0.2 and x+z+w>0. The main phase comprises a polycrystalline body containing from 0.0001 to 0.15 mol of any one or more additional element selected from metal elements, semimetal elements, transition metal elements, noble metal elements and alkaline earth metal elements belonging to Groups 2 to 15 of the Periodic Table, per mol of the compound represented by formula (1).

Abstract: The present invention provides crystal oriented ceramics, and a production method of the same, having a basic composition of isotropic perovskite-based potassium sodium niobate, demonstrating superior piezoelectric characteristics, and having a specific crystal plane oriented to a high degree of orientation. The crystal oriented ceramics as claimed in the present invention is composed of a polycrystalline substance of an isotropic perovskite compound represented by the general formula: {Lix(K1−yNay)1−x}{Nb1−z−wTazSbw}O3 (wherein, 0≦x≦0.2, 0≦y≦1, 0≦z≦0.4, 0≦w≦0.2, x+z+w>0), and a specific crystal plane of each crystal grain that composes said polycrystalline substance is oriented.

Abstract: Grain oriented ceramics constituted of a polycrystalline body having a first perovskite-type alkali-pentavalent metal oxide compound as the main phase, in which a specific crystal plane of each grain constituting the polycrystalline body is oriented. The grain oriented ceramics are obtained by molding a mixture of a first anisotropically-shaped powder A of which developed plane has a lattice matching with a specific crystal plane of the first perovskite-type alkali-pentavalent metal oxide compound and a first reaction material capable of reacting with the first anisotropically-shaped powder A thereby forming at least the first perovskite-type alkali-pentavalent metal oxide compound such that the first anisotropically-shaped powder A is oriented, and by heating them.