Patents by Inventor Yasuyoshi Takai
Yasuyoshi Takai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9689974Abstract: An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.Type: GrantFiled: April 3, 2009Date of Patent: June 27, 2017Assignee: CANON KABUSHIKI KAISHAInventors: Yasuhiro Someda, Kenichi Nagae, Katsuya Oikawa, Keishi Saito, Yasuyoshi Takai, Hirofumi Taki, Toru Sato
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Publication number: 20160001324Abstract: The present invention provides a technology for decreasing a dispersion of the performance among electromechanical transducers each having through wiring. A method for manufacturing an electromechanical transducer includes: obtaining a structure in which an insulative portion having a through hole therein is bonded onto an electroconductive substrate; filling the through hole with an electroconductive material to form a through wiring which is electrically connected with the electroconductive substrate; and using the electroconductive substrate as a first electrode, forming a plurality of vibrating membrane portions including a second electrode, which opposes to the first electrode through a plurality of gaps, on an opposite side of the first electrode to the side having the insulative portion, to thereby forming a plurality of cells.Type: ApplicationFiled: September 17, 2015Publication date: January 7, 2016Inventors: Yoshihiro Hasegawa, Yasuyoshi Takai
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Patent number: 9166502Abstract: The present invention provides a technology for decreasing a dispersion of the performance among electromechanical transducers each having through wiring. A method for manufacturing an electromechanical transducer includes: obtaining a structure in which an insulative portion having a through hole therein is bonded onto an electroconductive substrate; filling the through hole with an electroconductive material to form a through wiring which is electrically connected with the electroconductive substrate; and using the electroconductive substrate as a first electrode, forming a plurality of vibrating membrane portions including a second electrode, which opposes to the first electrode through a plurality of gaps, on an opposite side of the first electrode to the side having the insulative portion, to thereby forming a plurality of cells.Type: GrantFiled: August 16, 2012Date of Patent: October 20, 2015Assignee: CANON KABUSHIKI KAISHAInventors: Yoshihiro Hasegawa, Yasuyoshi Takai
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Patent number: 8624240Abstract: Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.Type: GrantFiled: July 21, 2011Date of Patent: January 7, 2014Assignee: Canon Kabushiki KaishaInventors: Ayumu Sato, Hideya Kumomi, Hisato Yabuta, Ryo Hayashi, Yasuyoshi Takai
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Patent number: 8530246Abstract: A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.Type: GrantFiled: May 11, 2009Date of Patent: September 10, 2013Assignee: Canon Kabushiki KaishaInventors: Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi
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Patent number: 8513662Abstract: Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.Type: GrantFiled: May 11, 2009Date of Patent: August 20, 2013Assignee: Canon Kabushiki KaishaInventors: Hisato Yabuta, Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi
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Patent number: 8507360Abstract: A method includes arranging a bonding layer of a predetermined thickness on at least one of a first functional region bonded on a release layer, which is capable of falling into a releasable condition when subjected to a process, on a first substrate, and a region, to which the first functional region is to be transferred, on a second substrate; bonding the first functional region to the second substrate through the bonding layer; and separating the first substrate from the first functional region at the release layer.Type: GrantFiled: November 3, 2009Date of Patent: August 13, 2013Assignee: Canon Kabushiki KaishaInventors: Takao Yonehara, Yasuyoshi Takai
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Patent number: 8420501Abstract: A method includes arranging a first bonding layer on a first functional region on a first substrate, or a region on a second substrate, bonding the first functional region to the second substrate through the first bonding layer, subjecting a first release layer to a first process to separate the first substrate from the first functional region at the first release layer, arranging a second bonding layer on a second functional region on the first substrate, or a region on a third substrate, bonding the second functional region to the second or third substrate through the second bonding layer, and subjecting a second release layer to a second process to separate the first substrate from the second functional region at the second release layer.Type: GrantFiled: November 3, 2009Date of Patent: April 16, 2013Assignee: Canon Kabushiki KaishaInventors: Takao Yonehara, Yasuyoshi Takai
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Patent number: 8415230Abstract: Provided is a method for transferring, onto a second substrate, at least one of functional regions arranged and joined to a first separation layer that is disposed on a first substrate and that becomes separable by a treatment, in which regions on the second substrate where the functional regions are to be transferred have a second separation layer that becomes separable by a treatment. The method includes a step of joining the first substrate to the second substrate by bonding such that the functional regions contact the second separation layer; a step of separating the functional regions from the first substrate at the first separation layer; and a step of, before or after the step of separation, forming separation grooves penetrating through the second substrate and the second separation layer from a surface of the second substrate, the surface being opposite to a surface having the second separation layer thereon.Type: GrantFiled: March 1, 2010Date of Patent: April 9, 2013Assignee: Canon Kabushiki KaishaInventors: Takao Yonehara, Yasuyoshi Takai
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Publication number: 20130049527Abstract: The present invention provides a technology for decreasing a dispersion of the performance among electromechanical transducers each having through wiring. A method for manufacturing an electromechanical transducer includes: obtaining a structure in which an insulative portion having a through hole therein is bonded onto an electroconductive substrate; filling the through hole with an electroconductive material to form a through wiring which is electrically connected with the electroconductive substrate; and using the electroconductive substrate as a first electrode, forming a plurality of vibrating membrane portions including a second electrode, which opposes to the first electrode through a plurality of gaps, on an opposite side of the first electrode to the side having the insulative portion, to thereby forming a plurality of cells.Type: ApplicationFiled: August 16, 2012Publication date: February 28, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Yoshihiro Hasegawa, Yasuyoshi Takai
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Patent number: 8336381Abstract: A sensor includes a movably supported movable element and an opposing member, and sensor detects a relative positional relationship between the movable element and the opposing member which are provided with a spacing therebetween. The opposing member has an impurity-doped portion which is provided at either an opposing portion, which is opposed to the movable element, or an adjoining portion, which adjoins the opposing portion. At least a part of the impurity-doped portion is formed on an opposite surface (that is, opposite to a surface that faces the movable element), from which opposite surface an electrical wiring is led out.Type: GrantFiled: November 29, 2007Date of Patent: December 25, 2012Assignee: Canon Kabushiki KaishaInventors: Atsushi Kandori, Masao Majima, Kenichi Nagae, Yasuyoshi Takai
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Method for manufacturing semiconductor device or apparatus, and apparatus for manufacturing the same
Patent number: 8216879Abstract: A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.Type: GrantFiled: May 7, 2009Date of Patent: July 10, 2012Assignee: Canon Kabushiki KaishaInventors: Nobuyuki Kaji, Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi -
Publication number: 20120032173Abstract: Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.Type: ApplicationFiled: July 21, 2011Publication date: February 9, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Ayumu Sato, Hideya Kumomi, Hisato Yabuta, Ryo Hayashi, Yasuyoshi Takai
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Patent number: 8084331Abstract: In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm?2eV?1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.Type: GrantFiled: March 2, 2009Date of Patent: December 27, 2011Assignee: Canon Kabushiki KaishaInventors: Masato Ofuji, Katsumi Abe, Hisae Shimizu, Ryo Hayashi, Masafumi Sano, Hideya Kumomi, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko
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Publication number: 20110311276Abstract: Provided is a method for transferring, onto a second substrate, at least one of functional regions arranged and joined to a first separation layer that is disposed on a first substrate and that becomes separable by a treatment, in which regions on the second substrate where the functional regions are to be transferred have a second separation layer that becomes separable by a treatment. The method includes a step of joining the first substrate to the second substrate by bonding such that the functional regions contact the second separation layer; a step of separating the functional regions from the first substrate at the first separation layer; and a step of, before or after the step of separation, forming separation grooves penetrating through the second substrate and the second separation layer from a surface of the second substrate, the surface being opposite to a surface having the second separation layer thereon.Type: ApplicationFiled: March 1, 2010Publication date: December 22, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Takao Yonehara, Yasuyoshi Takai
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Publication number: 20110098568Abstract: An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.Type: ApplicationFiled: April 3, 2009Publication date: April 28, 2011Applicants: CANON KABUSHIKI KAISHA, KYOTO UNIVERSITYInventors: Yasuhiro Someda, Kenichi Nagae, Katsuya Oikawa, Keishi Saito, Yasuyoshi Takai, Hirofumi Taki, Toru Sato
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Publication number: 20110092016Abstract: In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm?2eV?1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.Type: ApplicationFiled: March 2, 2009Publication date: April 21, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Masato Ofuji, Katsumi Abe, Hisae Shimizu, Ryo Hayashi, Masafumi Sano, Hideya Kumomi, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko
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Publication number: 20110076790Abstract: A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.Type: ApplicationFiled: May 11, 2009Publication date: March 31, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi
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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE OR APPARATUS, AND APPARATUS FOR MANUFACTURING THE SAME
Publication number: 20110065216Abstract: A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.Type: ApplicationFiled: May 7, 2009Publication date: March 17, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Nobuyuki Kaji, Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi -
Publication number: 20110062441Abstract: Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.Type: ApplicationFiled: May 11, 2009Publication date: March 17, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Hisato Yabuta, Masato Ofuji, Yasuyoshi Takai, Takehiko Kawasaki, Norio Kaneko, Ryo Hayashi