Abstract: A method for cleaning and drying a substrate in order to restrain formation of minute defects on a substrate surface when the substrate is dried by supplying the vapor of an organic solvent such as IPA. The method comprises the steps of: rinsing a surface of the substrate in a rising bath with pure water after wet processing of the substrate surface with liquid chemicals; lifting the substrate from the rinsing bath at a speed determined in advance by making a substrate surface hydrophobic, after rinsing the substrate; and removing moisture from the substrate surface by supplying an organic solvent to the substrate for a specified time, after lifting the substrate, the organic solvent being water soluble and lowering surface tension of the pure water.

Abstract: A substrate is cleaned by supplying an ultrasonically-agitated cleaning liquid onto the substrate from a nozzle provided above the substrate while spinning the substrate. The substrate being cleaned is spun at a rotational speed of 2600 rpm or more and 3500 rpm or less, or at a rotational speed of 260×V/D (rpm) or more and 350×V/D (rpm) or less, where D (mm) is a diameter of the nozzle and V (mm/sec) is a moving velocity of the nozzle.

Abstract: A substrate is cleaned by supplying an ultrasonically-agitated cleaning liquid onto the substrate from a nozzle provided above the substrate while spinning the substrate. The substrate being cleaned is spun at a rotational speed of 2600 rpm or more and 3500 rpm or less, or at a rotational speed of 260×V/D (rpm) or more and 350×V/D (rpm) or less, where D (mm) is a diameter of the nozzle and V (mm/sec) is a moving velocity of the nozzle.

Abstract: A p type well is formed on a silicon substrate. An n.sup.- type region forming a photo diode is formed in the p type well. A p type region is also formed in the p type well. The p type region is used for surrounding the n type region which becomes a vertical CCD register part. Generally, such a structure is called a Hi-C structure. A P.sup.+ type region for controlling the potential height when transferring is formed between the photo diode and the vertical CCD register part. A P.sup.+ type region is formed for electrical separation. A P.sup.++ type region is formed on the surface of a silicon substrate of the photo diode. On the silicon substrate, a gate oxide film is grown. A silicon nitride film is grown in a specified region on the gate oxide film. On the silicon nitride film, a polysilicon electrode which is a conductive electrode, acting as a driving electrode, is formed. On the surface of the polysilicon electrode, a polysilicon oxide film is grown by thermal oxidation.