Abstract: To provide a hydrogen sulfide mixture hardly corroding metals. The hydrogen sulfide mixture contains hydrogen sulfide and water. The hydrogen sulfide mixture is filled into a filling container so that at least one part of the hydrogen sulfide mixture is liquid and the moisture concentration of a gaseous phase is 0.001 mol ppm or more and less than 75 mol ppm.

Abstract: A method for producing a hydrogen chloride mixture containing hydrogen chloride and water, the method including: a first dehydration step of cooling a hydrogen chloride mixture in which a concentration of water is 1 mol ppm or more, to condense and separate water in the hydrogen chloride mixture; a second dehydration step of bringing a hydrogen chloride mixture obtained in the first dehydration step into contact with a water adsorbent to allow a concentration of water to be less than 0.5 mol ppm; and a filling step of filling a filling container with a hydrogen chloride mixture obtained in the second dehydration step so that at least a part of the hydrogen chloride mixture is liquid, and a concentration of water in a liquid phase at a time of completion of the filling is 0.01 mol ppm or more and less than 1 mol ppm.

Abstract: To provide a hydrogen sulfide mixture hardly corroding metals. The hydrogen sulfide mixture contains hydrogen sulfide and water. The hydrogen sulfide mixture is filled into a filling container so that at least one part of the hydrogen sulfide mixture is liquid and the moisture concentration of a gaseous phase is 0.001 mol ppm or more and less than 75 mol ppm.

Abstract: There is provided a hydrogen chloride mixture hardly corroding a metal. The hydrogen chloride mixture contains hydrogen chloride and water. The hydrogen chloride mixture is filled into a filling container so that a part of the hydrogen chloride mixture is liquid. The concentration of water in a gas phase in the hydrogen chloride mixture is 0.001 mol ppm or more and less than 4.5 mol ppm.

Abstract: The present invention develops a process for plasma treatment using a gas having no greenhouse effect in order to realize global environmental preservation and sophistication of plasma process performance and provides a process for plasma etching with high accuracy which process can depress damage to devices. The process for plasma treatment according to the present invention comprises the steps of feeding a treatment gas containing fluorine gas (F2) into a plasma generating chamber, alternately repeating application of high frequency electric field and stop of the application thereof to generate plasma, and carrying out substrate treatment by irradiating the plasma to a substrate. Furthermore, the substrate treatment may be carried out by individually or alternately extracting negative ions or positive ions from the plasma, or selectively extracting only negative ions, neutralizing them, to generate a neutral beam and irradiating the neutral beam to the substrate.

Abstract: A step (1) of heating a fluoronickel compound to release a fluorine gas, a step (2) of allowing a fluorine gas to be occluded into a fluorinated compound, and a step (3) of heating the fluoronickel compound and reducing an inner pressure are conducted in a container, respectively, at least once, and thereafter a high-purity fluorine gas is obtained in the step (1). Also, a step (5) of heating a fluoronickel compound and reducing an inner pressure and a step (6) of allowing a fluorine gas reduced in a hydrogen fluoride content to be occluded into the fluoronickel compound are conducted in a container having a fluorinated layer formed on its surface, respectively, at least once, the step (5) is further conducted, and thereafter a fluorine gas containing impurity gases is contacted with the fluoronickel compound to fix and remove the fluorine gas, and the impurities are analyzed by gas chromatography.

Abstract: Exhaust gas containing fluorine gas or halogen fluoride gas emitted from etching or cleaning steps is burned in a combustion chamber having a fluoride passivation film formed on its surface. It is possible to treat exhaust gas emitted from semiconductor fabrication processes which contains fluorine gas or halogen fluoride gas in high concentrations or large volumes, while abatement treatment can be accomplished safely and efficiently with less energy usage.

Abstract: A step (1) of heating a fluoronickel compound to release a fluorine gas, a step (2) of allowing a fluorine gas to be occluded into a fluorinated compound, and a step (3) of heating the fluoronickel compound and reducing an inner pressure are conducted in a container, respectively, at least once, and thereafter a high-purity fluorine gas is obtained in the step (1). Also, a step (5) of heating a fluoronickel compound and reducing an inner pressure and a step (6) of allowing a fluorine gas reduced in a hydrogen fluoride content to be occluded into the fluoronickel compound are conducted in a container having a fluorinated layer formed on its surface, respectively, at least once, the step (5) is further conducted, and thereafter a fluorine gas containing impurity gases is contacted with the fluoronickel compound to fix and remove the fluorine gas, and the impurities are analyzed by gas chromatography.

Abstract: According to the invention, a fluorination treated substance remarkably reduced in the light absorption loss of a substance to be treated, such as a fluoride thin film, a fluorination treatment apparatus capable of producing the fluorination treated substance, and a process for producing a fluorination treated substance can be provided. Disclosed is a process for producing a fluorination treated substance, comprising an enclosure step of enclosing a substance to be treated in a reactor and a fluorination reaction step of introducing a fluorine gas into the reactor to bring the substance to be treated into contact with the fluorine gas and thereby carry out fluorination reaction.

Abstract: A supplying method and a supplying apparatus for supplying fluorine gas, in which when a fluorine-occluding substance is used for the fluorine gas-generating means, a necessary amount of fluorine gas can be stably and swiftly supplied to have a uniform concentration to &a chamber of an excimer laser device or the like even at running, to say nothing of the gas exchange time. In a fluorine gas-generating means, fluorine gas is generated at the use point by controlling a fluorine-occluding substance to a predetermined temperature, the fluorine gas is introduced into a mixing container, a diluting gas is introduced into the mixing container to mix it with the fluorine gas to prepare a fluorine mixed gas having a predetermined pressure and a predetermined fluorine gas concentration, and the fluorine mixed gas reserved in the mixing container is supplied to a use side such as chamber, using the pressure difference.

Abstract: A treating method comprising contacting a fluorine-containing interhalogen compound first with a treating agent for the fluorine component and then with a treating agent for the halogen component, treating agents therefor, and a method for treating exhaust gas containing a fluorine-containing interhalogen compound, comprising filling a treating agent for the fluorine component into the internal cylinder of a treating apparatus having a double cylinder structure consisting of an internal cylinder and an external cylinder, filling a treating agent for the halogen component into the external cylinder, feeding exhaust gas containing a fluorine-containing interhalogen compound into the internal cylinder to travel the internal cylinder and the external cylinder in this order, and then discharging the treated gas from the external cylinder.