Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Abstract: A method for polishing a silicon wafer is provided, comprising: providing a silicon wafer; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.

Abstract: A semiconductor polishing composition is provided that can, in at least one embodiment, efficiently polish a semiconductor device with high accuracy while preventing fumed silica from being agglomerated and without causing a polishing flaw in the semiconductor device. Fumed silica, of which a bulk density of powder before dispersed is 50 g/L or more and less than 100 g/L, is used as abrasive grains. This makes it possible to enhance a dispersion state of the fumed silica, and to realize reduction in transportation cost.

Abstract: A semiconductor polishing composition is disclosed. The composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, the number of particles of fumed silica having a particle diameter of 0.5 ?m or more is 600,000 pieces/ml or less and the number of particles of fumed silica having a particle diameter of 1 ?m or more is 6000 pieces/ml or less.

Abstract: A semiconductor polishing composition is disclosed. The semiconductor polishing composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, an increase rate of average particle diameter of fumed silica after a shake test for 10 days is 10% or less.

Abstract: A semiconductor polishing composition is disclosed. The composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, the number of particles of fumed silica having a particle diameter of 0.5 ?m or more is 600,000 pieces/ml or less and the number of particles of fumed silica having a particle diameter of 1 ?m or more is 6000 pieces/ml or less.

Abstract: A semiconductor polishing composition is provided that can, in at least one embodiment, efficiently polish a semiconductor device with high accuracy while preventing fumed silica from being agglomerated and without causing a polishing flaw in the semiconductor device. Fumed silica, of which a bulk density of powder before dispersed is 50 g/L or more and less than 100 g/L, is used as abrasive grains. This makes it possible to enhance a dispersion state of the fumed silica, and to realize reduction in transportation cost.

Abstract: A semiconductor polishing composition is disclosed. The composition includes fumed silica, the semiconductor polishing composition being an aqueous dispersion solution of fumed silica. A content of the fumed silica includes a particle diameter of 100 nm or less is 15% by volume or more based on a total amount of the fumed silica.

Abstract: A process for producing a polishing composition excelling in dispersion stability wherein the amount of agglomerated particles is reduced. In step 1-1 thereof, ultrapure water is adjusted so as to have a pH value of 1.0 to 2.7. Under shearing force given by a high shear disperser, fumed silica powder of 50 to 200 m2/g specific surface area is charged therein until an initial silica concentration of 46 to 54 wt %, and the high shear disperser is operated so as to apply shearing force for 1 to 5 hours. In step 1-2, a small amount of ultrapure water is added to the silica dispersion so as to realize a silica concentration of 45 to 53 wt % and shearing force is applied for 10 to 40 minutes. In step 1-3, ultrapure water is added to the silica dispersion so as to realize a silica concentration of 33 to 44 wt % and shearing force is applied for 0.5 to 4 hours.