Abstract: To obtain a resin type identification method and a resin type identification apparatus with which an optimum infrared reflection spectrum for identifying a resin piece can be selected and accurate identification processing can be performed successively on individual resin pieces even when the resin pieces are identified using a single optical detector, at least one identifying signal power is selected by executing signal processing on the basis of signal powers corresponding to infrared reflection intensities obtained by emitting infrared light onto the resin piece, and the resin type of the resin piece is identified on the basis of an infrared reflection spectrum corresponding to the selected identifying signal power.

Abstract: To obtain a resin type identification method and a resin type identification apparatus with which an optimum infrared reflection spectrum for identifying a resin piece can be selected and accurate identification processing can be performed successively on individual resin pieces even when the resin pieces are identified using a single optical detector, at least one identifying signal power is selected by executing signal processing on the basis of signal powers corresponding to infrared reflection intensities obtained by emitting infrared light onto the resin piece, and the resin type of the resin piece is identified on the basis of an infrared reflection spectrum corresponding to the selected identifying signal power.

Abstract: An objective is to provide a light source device having a light emission source such as a semiconductor laser (LD), an LED and a lamp, and an optical part such as a lens and a fiber for transmitting, transferring and light-focusing, in which, by controlling the amount of sulfate ions inside the device at a low level, adhesion of ammonium sulfate to the optical part can be prevented. The light source device includes a light source for emitting light, an optical part for processing light emitted from the light source, and a housing in which the optical part is housed, or to which the optical part is mounted, and the housing is formed by machining material that includes no sulfur component, and the material is exposed on the surface thereof.

Abstract: A coin processing apparatus according to the present invention includes: a coin conveying section that conveys coins on a coin passage; an identifying section that identifies coins on the coin passage; at least one discharging section that discharges normal coins that are identified as normal by the identifying section from the coin passage; at least first and second removing sections that remove abnormal coins that are identified as abnormal by the identifying section from the coin passage; and a control section that distributes abnormal coins to either one of the first and second removing sections in order to remove the abnormal coins, in accordance with identification factors of the abnormal coins.

Abstract: A coin processing apparatus according to the present invention includes: a coin conveying section that conveys coins on a coin passage; an identifying section that identifies coins on the coin passage; at least one discharging section that discharges normal coins that are identified as normal by the identifying section from the coin passage; at least first and second removing sections that remove abnormal coins that are identified as abnormal by the identifying section from the coin passage; and a control section that distributes abnormal coins to either one of the first and second removing sections in order to remove the abnormal coins, in accordance with identification factors of the abnormal coins.

Abstract: An objective is to provide a light source device having a light emission source such as a semiconductor laser (LD), an LED and a lamp, and an optical part such as a lens and a fiber for transmitting, transferring and light-focusing, in which, by controlling the amount of sulfate ions inside the device at a low level, adhesion of ammonium sulfate to the optical part can be prevented. The light source device includes a light source for emitting light, an optical part for processing light emitted from the light source, and a housing in which the optical part is housed, or to which the optical part is mounted, and the housing is formed by machining material that includes no sulfur component, and the material is exposed on the surface thereof.

Abstract: The invention provides an end-face-processing jig that allows the formation of a reflectance control film on an end face of a semiconductor laser body while preventing possible degradation due to catastrophic optical damage (COD) of a semiconductor laser, and a method of manufacturing a semiconductor laser employing such an end-face-processing jig. A window part of the end-face-processing jig is made of at least one of an oxide and a nitride, and semiconductor laser bars are fixed by the end-face-processing jig so that their end faces are exposed through a window of the window part. In this condition, a reflectance control film is formed on the end faces of the semiconductor laser bars for the manufacture of a semiconductor laser. This prevents a metal from being taken in the reflectance control film, thus preventing the absorption of light caused by a metal taken in the reflectance control film.

Abstract: A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength ?, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al2O3, and has a thickness smaller than ?/4n, wherein n is the refractive index of Al2O3, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer.

Abstract: A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of ?/4 with respect to the wavelength ? of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.

Abstract: A coin wrapping machine includes a discrimination unit which detects images of the front face and rear face of coins during conveyance, and which discriminates the coins, a sorting unit which sorts the coins to one of a first side and a second side based on the discrimination results of the discrimination unit, a stacking unit which stacks the coins sorted to the first side by this sorting unit into columnar form with a prescribed number of coins, a wrapping unit which wraps stack of coins in columnar form, and a controller which controls the sorting unit based on the discrimination results so that at least one of an outside face of a coin at one end of the stack of coins and a second outside face of a coin at the other end of the stack of coins is the rear face.

Abstract: A semiconductor laser device includes a semiconductor laser body including a resonator and having a front end face and a rear end face facing each other, the resonator being located between the front end face and the rear end face. The front end face emits principal laser light. A reflectance control film is disposed on the front end face or the rear end face of the semiconductor laser body and is made up of either an aluminum oxide film or a five-layer film including the aluminum oxide film disposed such that it is the layer in the five-layer film farthest from the front end face or the rear end face. A silicon oxide film is disposed on the aluminum oxide film of the reflectance control film and has a thickness of 20 nm or less.

Abstract: A GaN semiconductor laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The sum of the optical film thicknesses of the first insulating film and the second insulating film is an odd multiple of ?/4 with respect to the wavelength ? of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than that of the second insulating film to GaN. The refractive index of the first insulating film is 1.9 or less and the refractive index of the second insulating film is 2 to 2.3.

Abstract: A semiconductor laser device comprises a GaN substrate having a refractive index of 3.5 or below, a semiconductor layer laminated on the substrate, and a pair of facets forming a resonator and in face-to-face-relation to each other in a direction perpendicular to the direction of the laminated layer. One of the facets of the resonator includes a low reflection film, of a first dielectric film, a second dielectric film, a third dielectric film, and a fourth dielectric film. When the refractive indexes of these films are taken as n1, n2, n3, and n4, n1=n3 and n2=n4. The following relationship between the first dielectric film and the third dielectric film, and between the second dielectric film and the fourth dielectric film is established, nd+n?d?=p?/4, where p is an integer, and ? is oscillation wavelength of a laser beam generated by the semiconductor laser device.

Abstract: A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of ?/4 with respect to the wavelength ? of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.

Abstract: The invention provides an end-face-processing jig that allows the formation of a reflectance control film on an end face of a semiconductor laser body while preventing possible degradation due to catastrophic optical damage (COD) of a semiconductor laser, and a method of manufacturing a semiconductor laser employing such an end-face-processing jig. A window part of the end-face-processing jig is made of at least one of an oxide and a nitride, and semiconductor laser bars are fixed by the end-face-processing jig so that their end faces are exposed through a window of the window part. In this condition, a reflectance control film is formed on the end faces of the semiconductor laser bars for the manufacture of a semiconductor laser. This prevents a metal from being taken in the reflectance control film, thus preventing the absorption of light caused by a metal taken in the reflectance control film.

Abstract: The invention provides a high-reliability nitride semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. A method of manufacturing a nitride semiconductor laser according to the invention uses a nitride-based III-V compound semiconductor and includes the steps of (a) forming an adherence layer of a nitride dielectric on both a light-emitting and a light-reflecting end face of a resonator in plasma containing a nitrogen gas; and (b) forming a low-reflective and a high-reflective face-coating film of a dielectric on the adherence layers.

Abstract: A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength ?, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al2O3, and has a thickness smaller than ?/4n, wherein n is the refractive index of Al2O3, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer.

Abstract: A semiconductor laser device comprises a GaN substrate having a refractive index of 3.5 or below, a semiconductor layer laminated on the substrate, and a pair of facets forming a resonator and in face-to-face-relation to each other in a direction perpendicular to the direction of the laminated layer. One of the facets of the resonator includes a low reflection film, of a first dielectric film, a second dielectric film, a third dielectric film, and a fourth dielectric film. When the refractive indexes of these films are taken as n1, n2, n3, and n4, n1=n3 and n2=n4. The following relationship between the first dielectric film and the third dielectric film, and between the second dielectric film and the fourth dielectric film is established, nd+n?d?=p?/4, where p is an integer, and ? is oscillation wavelength of a laser beam generated by the semiconductor laser device.

Abstract: A coin wrapping machine includes a discrimination unit which detects images of the front face and rear face of coins during conveyance, and which discriminates the coins, a sorting unit which sorts the coins to one of a first side and a second side based on the discrimination results of the discrimination unit, a stacking unit which stacks the coins sorted to the first side by this sorting unit into columnar form with a prescribed number of coins, a wrapping unit which wraps stack of coins in columnar form, and a controller which controls the sorting unit based on the discrimination results so that at least one of an outside face of a coin at one end of the stack of coins and a second outside face of a coin at the other end of the stack of coins is the rear face.

Abstract: In a semiconductor laser having a first facet (front facet) through which laser light is emitted and a second facet (rear facet), and a first coating film composed of a single-layer dielectric film on the first facet. The oscillating wavelength of the laser light is ? and the refractive index of the dielectric film is n. The thickness of the dielectric film is within a range between 5% and 50% of ?/4n.