Abstract: A resin composition for temporary fixing, the resin composition containing (A) a thermoplastic resin, (B) a thermosetting resin, and (C) a silicone compound, the resin composition having a shear viscosity of 4000 Pa·s or less at 120° C. and a rate of change in the shear viscosity being within 30% as determined before and after the resin composition is left to stand for 7 days in an atmosphere of 25° C.

Abstract: A resin composition for temporary fixing, the resin composition containing (A) a thermoplastic resin, (B) a thermosetting resin, and (C) a silicone compound, the resin composition having a shear viscosity of 4000 Pa·s or less at 120° C. and a rate of change in the shear viscosity being within 30% as determined before and after the resin composition is left to stand for 7 days in an atmosphere of 25° C.

Abstract: A semiconductor device manufacturing method includes a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with light and thereby separating the semiconductor member from the supporting member. The temporary fixation material layer has a light absorbing layer that generates heat upon absorbing light and a resin cured product layer including a cured product of a curable resin component. The curable resin component includes a hydrocarbon resin, and a storage modulus at 25° C. for the cured product of the curable resin component is 5 to 100 MPa.

Abstract: The present invention relates to a method for manufacturing an electronic component having an electromagnetic shield, comprising: a bonding step of bonding a temporary protective material on a workpiece with unevenness on the surface thereof; a photocuring step of curing the temporary protective material by light irradiation; a icing step of singulating the workpiece and the temporary protective material; a shielding step of forming a metal film on the portion of the singulated workpiece, the portion having no temporary protective material bonded thereon; and a peeling step of peeling the temporary protective material from the workpiece having the metal film formed, wherein the temporary protective material is formed from a resin composition for temporary protection with an elastic modulus at 25° C. of 3 MPa or less and an elastic modulus at 25° C. of 40 MPa or more after light irradiation with an exposure dose of 500 mJ/cm2 or more.

Abstract: The film for temporary fixing of the present invention is a film for temporary fixing which is used in a processing method of a semiconductor wafer, the method including a temporary fixing step of temporarily fixing the semiconductor wafer to a support via the film for temporary fixing, a processing step of processing the semiconductor wafer that is temporarily fixed to the support, and a separation step of separating the processed semiconductor wafer from the support and the film for temporary fixing, contains (A) a high molecular weight component and (B) a silicone-modified resin, and has a modulus of elasticity of from 0.1 to 1000 MPa at 23° C. after being heated for 30 minutes at 110° C. and for 1 hour at 170° C.

Abstract: The present invention relates to a method for manufacturing an electronic component having an electromagnetic shield, comprising: a bonding step of bonding a temporary protective material on a workpiece with unevenness on the surface thereof; a photocuring step of curing the temporary protective material by light irradiation; a icing step of singulating the workpiece and the temporary protective material; a shielding step of forming a metal film on the portion of the singulated workpiece, the portion having no temporary protective material bonded thereon; and a peeling step of peeling the temporary protective material from the workpiece having the metal film formed, wherein the temporary protective material is formed from a resin composition for temporary protection with an elastic modulus at 25° C. of 3 MPa or less and an elastic modulus at 25° C. of 40 MPa or more after light irradiation with an exposure dose of 500 mJ/cm2 or more.

Abstract: The film for temporary fixing of the present invention is a film for temporary fixing which is used in a processing method of a semiconductor wafer, the method including a temporary fixing step of temporarily fixing the semiconductor wafer to a support via the film for temporary fixing, a processing step of processing the semiconductor wafer that is temporarily fixed to the support, and a separation step of separating the processed semiconductor wafer from the support and the film for temporary fixing, contains (A) a high molecular weight component and (B) a silicone-modified resin, and has a modulus of elasticity of from 0.1 to 1000 MPa at 23° C. after being heated for 30 minutes at 110° C. and for 1 hour at 170° C.