Patents by Inventor Yasuyuki Sahara
Yasuyuki Sahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7792663Abstract: A circuit simulation apparatus has a means to acquire data regarding a transistor, a model parameter generation unit for generating a model parameter representing effects of stress upon the transistor active region caused by the isolation region, and a simulation execution unit for evaluating characteristics of the transistor using a simulation program associated with the model parameter. The model parameter includes a term regarding width of the transistor active region, a term regarding width of the peripheral active region, and a term regarding width between the transistor active region and the peripheral active region.Type: GrantFiled: July 10, 2007Date of Patent: September 7, 2010Assignee: Panasonic CorporationInventors: Daisaku Ikoma, Kyoji Yamashita, Yasuyuki Sahara, Katsuhiro Ootani, Tomoyuki Ishizu
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Patent number: 7562327Abstract: In a cell comprising an N well and a P well, a distance SP04 from a center line of a contact N-type region to an N well end of the N well is set to be a distance which causes a transistor not to be affected by resist. A distance from a well boundary to the center line of the contact N-type region is equal to SP04. A design on the P well is similar to that on the N well. Thereby, modeling of the transistor in the cell can be performed, taking into consideration an influence from resist in one direction. Also, by fabricating a cell array which satisfies the above-described conditions, design accuracy can be improved.Type: GrantFiled: November 2, 2006Date of Patent: July 14, 2009Assignee: Panasonic CorporationInventors: Shinsaku Sekido, Kyoji Yamashita, Katsuhiro Ootani, Yasuyuki Sahara, Daisaku Ikoma
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Patent number: 7462914Abstract: A first PMIS transistor includes a first active region which is formed on a semiconductor substrate and a first gate electrode which is formed on the first active region and which is connected at one end thereof to a first gate wiring and includes at the other end thereof a first protruding portion protruding at a side opposite to the first gate wiring side from the first active region A first NMIS transistor includes a second active region which is formed on the semiconductor substrate with a space left from the first active region and a second gate electrode which is formed on the second active region and which is connected at one end thereof to the first gate wiring and includes at the other end thereof a second protruding portion protruding at a side opposite to the first gate wiring side from the second active region. A protruding length of the first protruding portion of the first PMIS transistor is greater than a protruding length of the second protruding portion of the first NMIS transistor.Type: GrantFiled: April 25, 2006Date of Patent: December 9, 2008Assignee: Panasonic CorporationInventors: Yasuyuki Sahara, Katsuhiro Ootani
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Publication number: 20080077378Abstract: A circuit simulation apparatus has a means to acquire data regarding a transistor, a model parameter generation unit for generating a model parameter representing effects of stress upon the transistor active region caused by the isolation region, and a simulation execution unit for evaluating characteristics of the transistor using a simulation program associated with the model parameter. The model parameter includes a term regarding width of the transistor active region, a term regarding width of the peripheral active region, and a term regarding width between the transistor active region and the peripheral active region.Type: ApplicationFiled: July 10, 2007Publication date: March 27, 2008Inventors: Daisaku Ikoma, Kyoji Yamashita, Yasuyuki Sahara, Katsuhiro Ootani, Tomoyuki Ishizu
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Publication number: 20080021689Abstract: By using, as a model expression, an expression showing an inverse proportion between a change rate ?Idsat/Idsat of saturated current value and a product of a gate protrusion length E1 and a gate width Wg of a transistor and a coefficient, modeling is executed for a transistor property that depends on the gate protrusion length. This provides a circuit simulation that takes into consideration the gate protrusion length of a gate electrode.Type: ApplicationFiled: June 21, 2007Publication date: January 24, 2008Inventors: Kyoji Yamashita, Daisaku Ikoma, Yasuyuki Sahara, Katsuhiro Ootani, Shinji Watanabe
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Publication number: 20070141766Abstract: In a cell comprising an N well and a P well, a distance SP04 from a center line of a contact N-type region to an N well end of the N well is set to be a distance which causes a transistor not to be affected by resist. A distance from a well boundary to the center line of the contact N-type region is equal to SP04. A design on the P well is similar to that on the N well. Thereby, modeling of the transistor in the cell can be performed, taking into consideration an influence from resist in one direction. Also, by fabricating a cell array which satisfies the above-described conditions, design accuracy can be improved.Type: ApplicationFiled: November 2, 2006Publication date: June 21, 2007Inventors: Shinsaku Sekido, Kyoji Yamashita, Katsuhiro Ootani, Yasuyuki Sahara, Daisaku Ikoma
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Publication number: 20070018209Abstract: A first PMIS transistor includes a first active region which is formed on a semiconductor substrate and a first gate electrode which is formed on the first active region and which is connected at one end thereof to a first gate wiring and includes at the other end thereof a first protruding portion protruding at a side opposite to the first gate wiring side from the first active region A first NMIS transistor includes a second active region which is formed on the semiconductor substrate with a space left from the first active region and a second gate electrode which is formed on the second active region and which is connected at one end thereof to the first gate wiring and includes at the other end thereof a second protruding portion protruding at a side opposite to the first gate wiring side from the second active region. A protruding length of the first protruding portion of the first PMIS transistor is greater than a protruding length of the second protruding portion of the first NMIS transistor.Type: ApplicationFiled: April 25, 2006Publication date: January 25, 2007Inventors: Yasuyuki Sahara, Katsuhiro Ootani
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Publication number: 20060259881Abstract: An inventive semiconductor circuit device includes an N-well and a P-well. The N-well is provided with PMIS active areas surrounded by a trench isolation, and the P-well is provided with NMIS active areas surrounded by the trench isolation. The PMIS active areas are each provided with a gate of a P-channel transistor, and the NMIS active areas are each provided with a gate of an N-channel transistor. A layout is designed such that a distance Dpn between the NMIS active areas and the PMIS active areas in a Y-direction substantially becomes a fixed value. Thus, trench isolation stresses applied from the trench isolations to channel regions under the gates become uniform for respective transistors, resulting in an improvement in accuracy of circuit simulation.Type: ApplicationFiled: July 18, 2006Publication date: November 16, 2006Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yasuyuki Sahara, Katsuhiro Ootani, Kazuhisa Nakata, Shinsaku Sekido
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Patent number: 7093215Abstract: An inventive semiconductor circuit device includes an N-well and a P-well. The N-well is provided with PMIS active areas surrounded by a trench isolation, and the P-well is provided with NMIS active areas surrounded by the trench isolation. The PMIS active areas are each provided with a gate of a P-channel transistor, and the NMIS active areas are each provided with a gate of an N-channel transistor. A layout is designed such that a distance Dpn between the NMIS active areas and the PMIS active areas in a Y-direction substantially becomes a fixed value. Thus, trench isolation stresses applied from the trench isolations to channel regions under the gates become uniform for respective transistors, resulting in an improvement in accuracy of circuit simulation.Type: GrantFiled: January 7, 2004Date of Patent: August 15, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yasuyuki Sahara, Katsuhiro Ootani, Kazuhisa Nakata, Shinsaku Sekido
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Publication number: 20060142987Abstract: A circuit simulation apparatus and a modeling method are provided which are useful to design an integrated circuit in a very fine manner by forming a model of such a transistor that widths of element isolating-purpose insulating films are different from each other. In an isolation width depending parameter correcting means 4 of the present invention, an approximate expression of a parameter having an element isolating-purpose insulating film width depending characteristic is formed, and a value of a corrected parameter obtained by employing the formed approximate expression is replaced by a value of an original parameter, so that a transistor model of such a transistor is formed in which element isolating-purpose insulating film widths are different from each other. As a consequence, circuit simulation can be carried out in high precision by considering a change in transistor characteristics caused by a stress, which are approximated to actually measured data.Type: ApplicationFiled: December 22, 2005Publication date: June 29, 2006Inventors: Tomoyuki Ishizu, Takuya Umeda, Katsuhiro Ootani, Yasuyuki Sahara
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Patent number: 6963115Abstract: Gates of pMISFETs which need high current driving capability are high-driving-capability gates placed in discontinuous active regions or high-driving-capability gates disposed in two-input active regions. Gate of pMISFETs which do not need high current driving capability are normal gates arranged in continuous active regions. Since the high-driving-capability gates are provided in the discontinuous active regions or the two-input active regions, pMISFETs with high driving capability is achieved by utilizing light holes created due to a lattice distortion.Type: GrantFiled: September 8, 2003Date of Patent: November 8, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kazuhisa Nakata, Katsuhiro Ootani, Yasuyuki Sahara, Shinsaku Sekido
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Publication number: 20040153986Abstract: An inventive semiconductor circuit device includes an N-well and a P-well. The N-well is provided with PMIS active areas surrounded by a trench isolation, and the P-well is provided with NMIS active areas surrounded by the trench isolation. The PMIS active areas are each provided with a gate of a P-channel transistor, and the NMIS active areas are each provided with a gate of an N-channel transistor. A layout is designed such that a distance Dpn between the NMIS active areas and the PMIS active areas in a Y-direction substantially becomes a fixed value. Thus, trench isolation stresses applied from the trench isolations to channel regions under the gates become uniform for respective transistors, resulting in an improvement in accuracy of circuit simulation.Type: ApplicationFiled: January 7, 2004Publication date: August 5, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yasuyuki Sahara, Katsuhiro Ootani, Kazuhisa Nakata, Shinsaku Sekido
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Publication number: 20040099924Abstract: Gates of pMISFETs which need high current driving capability are high-driving-capability gates placed in discontinuous active regions or high-driving-capability gates disposed in two-input active regions. Gate of pMISFETs which do not need high current driving capability are normal gates arranged in continuous active regions. Since the high-driving-capability gates are provided in the discontinuous active regions or the two-input active regions, pMISFETs with high driving capability is achieved by utilizing light holes created due to a lattice distortion.Type: ApplicationFiled: September 8, 2003Publication date: May 27, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Kazuhisa Nakata, Katsuhiro Ootani, Yasuyuki Sahara, Shinsaku Sekido
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Publication number: 20040044511Abstract: In an inventive circuit simulation method, simulation is performed utilizing a circuit simulator, based on a netlist prepared using mask layout data for a circuit, and parameters obtained from measurement data concerning the characteristic of each transistor. The parameters are extracted from the measurement data based on not only the transistor size but also a stress applied to the transistor. Therefore, the circuit simulation can be performed with precision and accuracy never before possible, in consideration of a change in the characteristic of the transistor which is caused by the stress applied thereto.Type: ApplicationFiled: August 21, 2003Publication date: March 4, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTDInventors: Shinsaku Sekido, Katsuhiro Ootani, Yasuyuki Sahara, Kazuhisa Nakata
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Patent number: 5535208Abstract: The data transmission method employs IEEE P1394 protocol. The data header of the transmitted isochronous packet is added with a node identifier identifying the transmitter node, so that the receiver node can immediately identify the transmitter node, and can thereby request the transmitter node to maintain transmission. A Broadcast channel is a default channel used for isochronous packet transmission, unless a different channel number is otherwise specified. Thus, it is not necessary for the user to coordinate the channel number used by the transmitting and receiver nodes. It is also not necessary for the transmitter node to notify the receiver node, or the receiver node to notify the transmitter node, of the channel number used.Type: GrantFiled: March 7, 1995Date of Patent: July 9, 1996Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yasunori Kawakami, Hiroyuki Iitsuka, Takuya Nishimura, Shinji Hamai, Yasuyuki Sahara