Abstract: [Summary] [Object] It is an object of the present invention to provide a portable information terminal device and a display device capable of effectively suppressing a display screen from being peeped from an oblique direction. [Means for Settlement] A first pattern area and a second pattern area are formed in a display area of a display device 5; in a wide viewing field mode, the whole of the display area is brought into a wide viewing angle state; and in a narrow viewing field mode, a first divided state in which the display area except the first pattern area is brought into a narrow viewing angle state, and a second divided state in which the display area except the second pattern area is brought into the narrow viewing angle state are dynamically switched.

Abstract: The present invention provides a method for manufacturing a semiconductor device equipped with a capacitor in which a dielectric film is used, wherein a complex oxide is used as a mask material when the dielectric film is etched.

Abstract: A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is formed on each of the pair of ferroelectric films. A portion of the lower electrode on which the ferroelectric film is formed is thicker than a portion thereof on which the ferroelectric film is not formed. Such a structure is obtained by sequentially depositing the lower electrode, the ferroelectric film, and the upper electrode on the insulating film, forming a mask on the upper-electrode, using this mask to etch the upper-electrode and the ferroelectric film to thereby pattern a pair of upper electrodes and a pair of ferroelectric electrodes, forming such a mask that continuously covers the pair of upper electrodes and the pair of ferroelectric films, and then etching the lower-electrode material film.

Abstract: A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is formed on each of the pair of ferroelectric films. A portion of the lower electrode on which the ferroelectric film is formed is thicker than a portion thereof on which the ferroelectric film is not formed. Such a structure is obtained by sequentially depositing the lower electrode, the ferroelectric film, and the upper electrode on the insulating film, forming a mask on the upper-electrode, using this mask to etch the upper-electrode and the ferroelectric film to thereby pattern a pair of upper electrodes and a pair of ferroelectric electrodes, forming such a mask that continuously covers the pair of upper electrodes and the pair of ferroelectric films, and then etching the lower-electrode material film.

Abstract: There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

Abstract: There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

Abstract: A color filter having a resin black matrix on a transparent substrate, wherein the resin black matrix has a 20.degree. specular glossiness of from 100 to 200.

Abstract: A method for etching a silicon nitride film, includes the steps of supplying a fluorine radical, a compound of fluorine and hydrogen, and an oxygen radical close to a substrate having the silicon nitride film, and selectively etching the silicon nitride film from the substrate with the fluorine radical, the compound of fluorine and hydrogen, and the oxygen radical.

Abstract: According to the present invention, there is provided an acrylic copolymer having a number average molecular weight of 1000-500,000, which comprises 1-90 % by weight of a structural unit represented by the following general formula ##STR1## (wherein R represents a hydrogen atom or a methyl group) and 99-10 % by weight of a structural unit-derived from an ethylenic unsaturated monomer, an acrylic copolymer composition and a paint containing the same.The coat obtained by applying the acrylic copolymer has excellent abrasion resistance, chemical resistance, flexibility, strength and the like.

Abstract: An anti-fouling surface structure having a multiplicity of ribbons made of plastics thin film and planted on a surface and a method of planting ribbons on a substrate. The ribbons fixed to the surface flutter in sea-water so as to prevent marine growth on the surface. The anti-fouling surface structure may be realized by directly planting ribbons on the surface of a structure to be protected or covering the surface of the structure by a covering material which has a multiplicity of ribbons planted on a substrate sheet or string. The method of planting ribbons comprises the steps of slitting a wide film into a multiplicity of parallel ribbons, flexing and folding the multiplicity of ribbons simultaneously in the direction perpendicular to the slitting direction thereby forming crests ribbons on opposite sides, bonding the ribbons to a substrate at their crests on one side, and cutting the crests opposite to the bonded crests.

Abstract: The tendons of a tension leg platform (TLP) used for producing petroleum offshore at a depth of 400-1000 m are protected against fatigue corrosion which mainly determines the life of the tendons.The straight steel pipes (1) have an insulative, corrosion-protection coating (8) having good damage resistance. The screw couplings (2) have a sprayed aluminum layer (9) having the ends contiguous to the ends of the insulative, corrosion-protection, and a galvanic current anode (5) is electrically connected to the screw coupling (2).