Abstract: A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semiconductor substrate, an intrinsic base region having a junction surface with the collector layer and made of a second semiconductor of a second conductive type, and an emitter region having a junction surface with the intrinsic base region and made of a third semiconductor of the first conductive type. A periphery of the intrinsic base region is surrounded by an insulating region extending from the collector layer to the semiconductor substrate.

Abstract: There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is miniaturized and reduced in cost. A capacitance adjustment line (11) connected to a base pad (7) forms a parasitic capacitor with respect to an N+ collector substrate by interposing an insulating film (3) and an N collector substrate therebetween, thereby increasing collector-base capacitance Ccb. This capacitor is incorporated into a bipolar transistor, which functions as an oscillation amplifier and has a small transistor operation region (2), at least as a part of a balance capacitor constituting the oscillation circuit in the course of production of a semiconductor.

Abstract: There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is miniaturized and reduced in cost. A capacitance adjustment line (11) connected to a base pad (7) forms a parasitic capacitor with respect to an N+ collector substrate by interposing an insulating film (3) and an N collector substrate therebetween, thereby increasing collector-base capacitance Ccb. This capacitor is incorporated into a bipolar transistor, which functions as an oscillation amplifier and has a small transistor operation region (2), at least as a part of a balance capacitor constituting the oscillation circuit in the course of production of a semiconductor.

Abstract: There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is miniaturized and reduced in cost. A capacitance adjustment line (11) connected to a base pad (7) forms a parasitic capacitor with respect to an N+ collector substrate by interposing an insulating film (3) and an N collector substrate therebetween, thereby increasing collector-base capacitance Ccb. This capacitor is incorporated into a bipolar transistor, which functions as an oscillation amplifier and has a small transistor operation region (2), at least as a part of a balance capacitor constituting the oscillation circuit in the course of production of a semiconductor.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semiconductor substrate, an intrinsic base region having a junction surface with the collector layer and made of a second semiconductor of a second conductive type, and an emitter region having a junction surface with the intrinsic base region and made of a third semiconductor of the first conductive type. A periphery of the intrinsic base region is surrounded by an insulating region extending from the collector layer to the semiconductor substrate.

Abstract: A bipolar transistor includes the first group of transistors 610a, the second group of transistors 610b, the third group of transistors 610c and the fourth group of transistors 610d. The groups of transistors have unit transistors with emitters, bases and collectors that are connected electrically in parallel and the number of unit transistors is different from group to group and 2, 4, 8, and 16, respectively.

Abstract: A bipolar transistor includes the first group of transistors 610a, the second group of transistors 610b, the third group of transistors 610c and the fourth group of transistors 610d. The groups of transistors have unit transistors with emitters, bases and collectors that are connected electrically in parallel and the number of unit transistors is different from group to group and 2, 4, 8, and 16, respectively.

Abstract: There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is miniaturized and reduced in cost. A capacitance adjustment line (11) connected to a base pad (7) forms a parasitic capacitor with respect to an N+ collector substrate by interposing an insulating film (3) and an N collector substrate therebetween, thereby increasing collector-base capacitance Ccb. This capacitor is incorporated into a bipolar transistor, which functions as an oscillation amplifier and has a small transistor operation region (2), at least as a part of a balance capacitor constituting the oscillation circuit in the course of production of a semiconductor.

Abstract: A propeller shaft for automobiles includes a cylindrical main body 1 made of FRP and joints 2 that are joined to the ends of this main body by press fitting, the main body 1 having a main layer 1a extending over the entire length thereof and including reinforcing fibers helically wound at an angle of ±5˜30′ with respect to the axial dimension of the main body, and sub-layers 1b formed at the ends of the main body so as to be integral with and internally of the main layer 1a and including hooped reinforcing fibers. Each joint 2 has a slope 2c descending toward the joint surface between this joint and the main body 1, an erect surface 2d having an outer diameter not larger than the outer diameter of the sub-layers 1b and abutting the end surface of the associated sub-layer 1b, or a wedge 2f the tip of which is opposed to the interface between the main layer 1a and the associated sub-layer 1b.

Abstract: A propeller shaft for automobiles includes a cylindrical main body 1 made of FRP and joints 2 that are joined to the ends of this main body by press fitting, the main body 1 having a main layer 1a extending over the entire length thereof and including reinforcing fibers helically wound at an angle of ±5˜30° with respect to the axial dimension of the main body, and sub-layers 1b formed at the ends of the main body so as to be integral with and internally of the main layer 1a and including hooped reinforcing fibers. Each joint 2 has a slope 2c descending toward the joint surface between this joint and the main body 1, an erect surface 2d having an outer diameter not larger than the outer diameter of the sub-layers 1b and abutting the end surface of the associated sub-layer 1b, or a wedge 2f the tip of which is opposed to the interface between the main layer 1a and the associated sub-layer 1b.

Abstract: A solid state image sensor comprising a matrix of photosensitive elements adapted to accumulate signal charges corresponding to at least two different aspect ratios, a plurality of vertical shift registers disposed adjacent to columns of the photosensitive elements for a vertical transfer of the signal charges and a plurality of horizontal shift registers corresponding to the respective aspect ratios and disposed in parallel with each other for a horizontal transfer of the signal charges from the vertical shift registers. As a horizontal shift register exclusive to each aspect ratio is provided in the above manner, it is no longer necessary to superimpose the signal outputs of a plurality of buffer amplifiers so that a picture signal corresponding to the desired aspect ratio can be easily read out.

Abstract: The solid state image sensor of the invention comprises a plurality of photosensitive elements arranged in a matrix form, a vertical shift register disposed adjacent each column of the photosensitive elements and adapted to vertically transfer signal charges read from the corresponding photosensitive elements, a storage region for storing signal charges transferred by the vertical shift register and a horizontal shift register adapted to horizontally transfer signal charges read from the storage region, the above vertical shift register comprising units of 2n (n is a positive integer of not less than 3) transfer electrodes which are respectively independent.