Patents by Inventor Yasuyuki Tsuboi

Yasuyuki Tsuboi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220324180
    Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.
    Type: Application
    Filed: June 23, 2022
    Publication date: October 13, 2022
    Applicants: Laser Systems Inc., NICHIA CORPORATION
    Inventors: Yuichi ASAKAWA, Yasuyuki TSUBOI, Hiroaki TAMEMOTO, Ryota TAOKA, Minoru YAMAMOTO
  • Patent number: 7824761
    Abstract: A metal structure capable of significantly increasing wavelength selectivity and polarization electivity for an incident light, and a production method thereof. First, a solid transparent substrate (glass substrate) (10) is cleaned and dried (S100). The surface of the substrate (10) is spin-coated with a positive electron lithography-use resist solution and then baked, and the resist solution is removed to form a resist thin film (20) on the substrate (10) (S200). A specified pattern is drawn on the resist thin film (20) with an electron beam, and the film is developed, rinsed and dried (S300). Then, metals such as chromium and then gold are formed sequentially on the substrate (10) by sputtering (S400). And, excessive resist materials are removed from the surface of the substrate (10) (S500), whereby metal nano-rod array (40) is completed.
    Type: Grant
    Filed: February 16, 2006
    Date of Patent: November 2, 2010
    Assignee: National University Corporation Hokkaido University
    Inventors: Hiroaki Misawa, Kosei Ueno, Yasuyuki Tsuboi, Keiji Sasaki
  • Patent number: 7709810
    Abstract: There are provided a sensing device, a sensing apparatus, and a sensing method capable of realizing effective multi-photon absorption and local plasmon enhancement function. The sensing device can realize a high multi-photon excitation efficiency and selectivity by accurately controlling the material, shape, size, interval, and direction of metal particles arranged on a substrate. By employing the sensing device in various sensing apparatuses such as a fluorescent sensing apparatus, it is possible to realize sensing of detection object material with a high sensibility.
    Type: Grant
    Filed: March 17, 2006
    Date of Patent: May 4, 2010
    Assignee: National University Corporation Hokkaido University
    Inventors: Hiroaki Misawa, Kosei Ueno, Yasuyuki Tsuboi, Keiji Sasaki
  • Publication number: 20090032735
    Abstract: There are provided a sensing device, a sensing apparatus, and a sensing method capable of realizing effective multi-photon absorption and local plasmon enhancement function. The sensing device can realize a high multi-photon excitation efficiency and selectivity by accurately controlling the material, shape, size, interval, and direction of metal particles arranged on a substrate. By employing the sensing device in various sensing apparatuses such as a fluorescent sensing apparatus, it is possible to realize sensing of detection object material with a high sensibility.
    Type: Application
    Filed: March 17, 2006
    Publication date: February 5, 2009
    Inventors: Hiroaki Misawa, Kosei Ueno, Yasuyuki Tsuboi, Keiji Sasaki
  • Publication number: 20080314883
    Abstract: A laser processing method and apparatus capable of forming an extremely minute modified area not exceeding half the diffraction limit value of the laser wavelength used for processing without causing plasma in a processing object such as a dielectric material substrate or semiconductor material substrate. In this technology, attention is paid to the fact that new damage is caused even at laser intensity that does not cause plasma at all, and a laser beam (1) that has lower laser intensity than the laser intensity threshold at which plasma occurs (for example, approximately 1/1.5 of that laser intensity threshold) is convergently radiated into a processing object (10) using an irradiation optical system (20) accuracy-designed so as not to cause a self-focusing effect at the convergence location (3).
    Type: Application
    Filed: April 18, 2005
    Publication date: December 25, 2008
    Inventors: Saulius Juodkazis, Oleg Efimov, Hiroaki Misawa, Yasuyuki Tsuboi
  • Publication number: 20080160287
    Abstract: A metal structure capable of significantly increasing wavelength selectivity and polarization electivity for an incident light, and a production method thereof. First, a solid transparent substrate (glass substrate) (10) is cleaned and dried (S100). The surface of the substrate (10) is spin-coated with a positive electron lithography-use resist solution and then baked, and the resist solution is removed to form a resist thin film (20) on the substrate (10) (S200). A specified pattern is drawn on the resist thin film (20) with an electron beam, and the film is developed, rinsed and dried (S300). Then, metals such as chromium and then gold are formed sequentially on the substrate (10) by sputtering (S400). And, excessive resist materials are removed from the surface of the substrate (10) (S500), whereby metal nano-rod array (40) is completed.
    Type: Application
    Filed: February 16, 2006
    Publication date: July 3, 2008
    Inventors: Hiroaki Misawa, Kosei Ueno, Yasuyuki Tsuboi, Keiji Sasaki