Abstract: A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. Examples of the water-soluble polymer include polysaccharides and alcohol compounds. Another polishing composition of the present invention contains abrasive grains having a silanol group, and a water-soluble polymer. When this polishing composition is left to stand for one day in an environment at a temperature of 25° C., the water-soluble polymer is adsorbed on the abrasive grains at 5,000 or more molecules per 1 ?m2 of surface area of the abrasive grains.

Abstract: A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is immobilized, and having a pH of 6 or less.

Abstract: To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprising abrasive grains, a processing accelerator, a nonionic surfactant represented by R-POE (I) (wherein R is a C10-16 alkyl group having a branched structure, and POE is a polyoxyethylene chain) and having an HLB of from 7 to 12, an anionic surfactant, a protective film-forming agent, an oxidizing agent, and water.

Abstract: A polishing composition includes an abrasive, phosphoric acid, and an oxidizing agent and has a pH of 6 or less. The polishing composition has the capability for polishing an alloy containing nickel and iron with a high stock removal rate. Accordingly, the polishing composition is preferably used in an application for polishing an object including the alloy containing nickel and iron.

Abstract: A polishing composition contains alumina, a complexing agent, and an oxidizing agent. It is preferable that the complexing agent is at least one compound selected from an ?-amino acid, ammonia, and an ammonium salt. The polishing composition is preferably used in applications for polishing an object having a resin section with a trench, and a conductor layer provided on the resin section so that at least the trench is filled with the conductor layer.

Abstract: A polishing composition includes an abrasive, phosphoric acid, and an oxidizing agent and has a pH of 6 or less. The polishing composition has the capability for polishing an alloy containing nickel and iron with a high stock removal rate. Accordingly, the polishing composition is preferably used in an application for polishing an object including the alloy containing nickel and iron.

Abstract: A polishing composition contains alumina, a complexing agent, and an oxidizing agent. It is preferable that the complexing agent is at least one compound selected from an ?-amino acid, ammonia, and an ammonium salt. The polishing composition is preferably used in applications for polishing an object having a resin section with a trench, and a conductor layer provided on the resin section so that at least the trench is filled with the conductor layer.