Patents by Inventor Yat-Kai Sun

Yat-Kai Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180269107
    Abstract: A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.
    Type: Application
    Filed: March 14, 2017
    Publication date: September 20, 2018
    Inventors: Yat-Kai Sun, Chao-Nan Chen, Hung-Lin Shih, Che-Hung Huang, Wei-Lun Hsu, Cheng-Chia Liu
  • Patent number: 10079180
    Abstract: A method of forming a semiconductor device includes following steps. First of all, plural mandrel patterns are formed on a target layer. Then, plural capping layers are formed to cover a top region and sidewalls of each of the mandrel patterns, respectively. Next, plural spacers are formed at two sides of each of the capping layers, respectively. Following these, a portion of the spacers and the capping layers covered on the top regions of the mandrel patterns are simultaneously removed, and the capping layers is then removed completely.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: September 18, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yat-Kai Sun, Chao-Nan Chen, Hung-Lin Shih, Che-Hung Huang, Wei-Lun Hsu, Cheng-Chia Liu