Abstract: A microbolometer read-out circuit includes an extraction circuit configured to detect a voltage signal of a temperature variation; an analog-to-digital converter coupled to the extraction circuit and configured to digitalize the voltage signal of the temperature variation; an image processing circuit coupled to the analog-to-digital converter; and wherein the image processing circuit is coupled to a gain digital-to-analog converter and an offset digital-to-analog converter.

Abstract: A microbolometer read-out circuit includes an extraction circuit configured to detect a voltage signal of a temperature variation; an analog-to-digital converter coupled to the extraction circuit and configured to digitalize the voltage signal of the temperature variation; an image processing circuit coupled to the analog-to-digital converter; and wherein the image processing circuit is coupled to a gain digital-to-analog converter and an offset digital-to-analog converter.

Abstract: The present invention relates to a verification architecture of an infrared thermal imaging array module, which includes the following steps. Perform specification design of thermal imaging module, epitaxy, and verification of optical characteristics for calibrating epitaxial parameters. Perform a fabrication process of single-device-type sensing device and verification of changing-temperature optoelectronic measurement by measuring and calibrating at low temperatures by changing temperatures and voltages. Perform a fabrication process of focal-plane array and verification of optoelectronic uniformity and test for dark-current uniformity. Perform a fabrication process and verification of jointing and thinning the focal-plane array and the ROIC. The focal-plane sensing module and the ROIC are jointed by indium bonding, and optoelectronic signal conversion is performed using the sensing array module. Perform the verification of integrated test on thermal image quality.

Abstract: The present invention relates to a verification architecture of an infrared thermal imaging array module, which includes the following steps. Perform specification design of thermal imaging module, epitaxy, and verification of optical characteristics for calibrating epitaxial parameters. Perform a fabrication process of single-device-type sensing device and verification of changing-temperature optoelectronic measurement by measuring and calibrating at low temperatures by changing temperatures and voltages. Perform a fabrication process of focal-plane array and verification of optoelectronic uniformity and test for dark-current uniformity. Perform a fabrication process and verification of jointing and thinning the focal-plane array and the ROIC. The focal-plane sensing module and the ROIC are jointed by indium bonding, and optoelectronic signal conversion is performed using the sensing array module. Perform the verification of integrated test on thermal image quality.