Patents by Inventor Yaunzhong Zhou

Yaunzhong Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5580429
    Abstract: Cathodic/anodic vacuum arc sources with plasma ion implantation deposition system for depositing high quality thin film coatings of complex compounds on a workpiece. Both cathodic and anodic vacuum arc deposition sources, CAVAD, are used to create a plasma vapor from solid materials composing the cathode and/or anode in the cathodic and/or anodic arc respectively. Gases, e.g., hydrogen or nitrogen can be in the deposited films by creating a background plasma of the desired gas using either RF energy, thermionic emission, or consequential ionization of the gas passing through the arc or around the substrate. Application of highly negative pulses to the substrate to extract the ions and provide them with the appropriate energy to interact with the other species in the thin film formation on the substrate to form the desired films. The substrate is bombarded with the ionized particles to form carbon nitrides with variable [N]/[C] ratios, referred to as CN.sub.x.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: December 3, 1996
    Assignee: Northeastern University
    Inventors: Chung Chan, Ryne C. Allen, Imad Husein, Yaunzhong Zhou