Abstract: There is provided a backplane for an organic electronic device including a TFT substrate having a base substrate, a polysilicon layer, a gate dielectric layer, a gate electrode, an interlayer dielectric, and a data electrode; an insulating layer over the TFT substrate; a multiplicity of first openings in the insulating layer having a depth d1; a multiplicity of pixelated diode electrode structures, wherein a first set of diode electrode structures are in the first openings; and a bank structure defining pixel areas over the diode electrode structures; wherein the first openings and first set of diode electrode structures are in at least a first set of the pixel areas.

Abstract: There is provided a backplane for an organic electronic device. The backplane has a TFT substrate having a multiplicity of electrode structures thereon. There are spaces around the electrode structures and a layer of organic filler in the spaces. The thickness of the layer of organic filler is the same as the thickness of the electrode structures.

Abstract: There is provided a backplane for an organic electronic device. The backplane has a TFT substrate having a multiplicity of electrode structures thereon. There are spaces around the electrode structures and a layer of inorganic filler in the spaces. The thickness of the layer of inorganic filler is the same as the thickness of the electrode structures.

Abstract: There is provided a backplane for an organic electronic device. The backplane has a TFT substrate; a multiplicity of electrode structures; and a bank structure defining a multiplicity of pixel openings on the electrode structures. The bank structure has a height adjacent to the pixel opening, hA, and a height removed from the pixel opening, hR, and hA is significantly less than hR.

Abstract: There is provided a process for forming an organic electronic device. The process includes the steps of providing a TFT substrate; forming a thick organic planarization layer over the substrate; forming on the planarization layer a multiplicity of thin first electrode structures having a first thickness, where the electrode structures have tapered edges with a taper angle of no greater than 75°; forming a buffer layer by liquid deposition of a composition including a buffer material in a first liquid medium, the buffer layer having a second thickness, wherein the second thickness is at least 20% greater than the first thickness; forming over the buffer layer a chemical containment pattern defining pixel openings; depositing into at least a portion of the pixel openings a composition including a first active material in a second liquid medium; and forming a second electrode.

Abstract: There is provided a process for forming an organic electronic device wherein a TFT substrate having a non-planar surface has deposited over that substrate a planarization layer such that a substantially planar substrate, or planarized substrate, is formed. A multiplicity of thin first electrode structures having a first thickness and having tapered edges with a taper angle of no greater than 75° are formed over the planarized substrate. A multiplicity of active layers is formed over the planarized substrate. Then a buffer layer is formed by liquid deposition of a composition comprising a buffer material in a first liquid medium. The buffer layer has a second thickness which is at least 20% greater than the first thickness. A chemical containment pattern defining pixel openings is then formed over the buffer layer. A composition comprising a first active material in a second liquid medium is deposited into at least a portion of the pixel openings. Then a second electrode is formed.

Abstract: There is provided a backplane for an organic electronic device. The backplane has a TFT substrate having a multiplicity of electrode structures thereon; and a bank structure defining pixel areas over the electrode structures. The bank structure is removed from and not in contact with the electrode structures by a distance of at least 0.1 microns.

Abstract: There is provided a backplane for an organic electronic device. The backplane has a TFT substrate having a multiplicity of electrode structures thereon; a bank structure defining pixel areas over the electrode structures; and a thin layer of insulative inorganic material between the electrode structures and the bank structures. The bank structure is removed from and not in contact with the electrode structures by a distance of at least 0.1 microns.

Abstract: There is provided a backplane for an organic electronic device. The backplane has a TFT substrate; a multiplicity of electrode structures; and a bank structure defining a multiplicity of pixel openings on the electrode structures. The bank structure has a height adjacent to the pixel opening, hA, and a height removed from the pixel opening, hR, and hA is significantly less than hR.

Abstract: There is provided a backplane for an organic electronic device. The backplane has a TFT substrate; a thick organic planarization layer; a multiplicity of electrode structures; and a thin insulative inorganic bank structure defining a multiplicity of pixel openings on the electrode structures.